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Materials Considerations in Photoemission Detectors S W McKnight C A DiMarzio
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Energy Bands in Solids Energy Allowed electron energies (Energy Band) Forbidden electron energies (Energy Gap) E g1 E g2
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Energy Bands and Gaps Metals, insulators, and semiconductors all have energy bands and gaps Difference is due to electron filling of bands –Metals: highest band with electrons in it is part-filled. –Insulators: highest band with electron in it is completely filled. (Filled band carries no net current.)
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Electron Fermi Energy Pauli Exclusion Principle (“fermions”): each electron state can be occupied by no more than one electron per spin state Fermi Energy (E f ) separates occupied states from unoccupied states at T=0K E f is halfway between highest filled state and lowest empty state
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Metal/Insulator Band Structure Energy Metal Insulator EfEf EfEf
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Semiconductor Band Structure Intrinsic Semiconductor (E g ≤ ~100 kT) Extrinsic Semiconductor (p-type) Extrinsic Semiconductor (n-type) EfEf EgEg EfEf EfEf electrons “holes”
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Surface Energies Metal EfEf Insulator E a = electron affinity = E vac - E c Vacuum Level (E vac ) ФoФo Ф o = work function = E vac - E f EcEc EaEa
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Work Function of Elements Silver (Ag)4.26 eVPotassium (K)2.30 Aluminum (Al)4.28Magnesium (Mg)3.66 Barium (Ba)2.70Nickel (Ni)5.15 Berylium (Be)4.98Antimony (Sb)4.55 Cesium (Cs)2.14Silicon (Si)4.85 Copper (Cu)4.65Sodium (Na)2.75 Iron (Fe)4.5Tungsten (W)4.55
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Photomultiplier Tubes Vacuum photoemissive device Window –End-on, side-looking Photocathode –Insulator/semiconductor materials (better η than metals) –Spectral response from UV to Near IR –Moderate quantum efficiency (< 0.3) Dynode chain –Gain ~10 6 through secondary electron emission
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PMT Concept
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Window Materials
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Photocathode Quantum efficiency (η q ) – η q = (# emitted photoelectrons/# of incident photons) Photon absorbed Photoelectron created Photoelectron escapes surface Wavelength limits – hν > E g + E a –UV tubes: CsI, CsTe “solar blind” ( <300-200 nm) –IR tubes: multi-alkali materials (Sb-Na-K-Cs)
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Photocathode Band Models
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Photocathode Quantum Efficiency η = P A P ν P t P s P A = Probability that photon will be absorbed by material = (1-R) P ν = Probability that light absorption will excite electron above vacuum level P t = Probability that electron will reach surface P S = Probability that electron reaching surface will be released into vacuum
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dx
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Probability of absorption between x and x+dx =
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Probability of Electron Reaching Surface
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Probability of absorption between x and x+dx and electron escaping to surface = P(x) = k e -kx dx e -x/L P(x) = k e –(kx + x/L) dx Total probability of absorption and electron escaping to surface = P(x 1 ) + P(x 2 ) + P(x 3 ) + …
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Photocathode Quantum Efficiency P ν = Probability that light absorption will excite electron above vacuum level P S = Probability that electron reaching surface will be released into vacuum R = Surface reflectivity k = photon absorption coefficient L = mean escape length of electrons
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Photocathode Materials Cs-Te: UV “solar blind” Sb-Cs: UV-Vis Bialkali (Sb-Rb-Cs, Sb-K-Cs): UV-Vis Multialkali (Sb-Na-K-Cs): UV-IR Ag-O-Cs: Vis-IR GaAs(Cs), InGaAs(Cs): UV-IR
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Cs-Te Bialkali Sb-Cs
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Dynode Chain Amplification of photoelectrons by secondary electron emission δ = (# of secondary electrons) / (# of primary electrons) Gain: G~(δ) n (for n-stage dynode chain)
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Secondary Electron Emission Insulator/Semiconductor EcEc EaEa Primary Electron x E Surface Electron-Hole Pairs Secondary Electrons EgEg Valence Band Vacuum Level Collision Process
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Secondary Electron Emission Primary electron loses energy to electrons in solid –Metals: electron-electron interactions –Insulators: electron-hole creation –Penetration depth proportional to primary electron energy Secondary electrons travel to surface –Electron-electron or electron-phonon collisions reduce energy and facilitate recombination –Greater chance of collision if created deeper –More electron-electron collisions in metals than insulators Secondary electrons emitted into vacuum –Requires kinetic energy > electron affinity (E a ) –Secondary emission coefficient (σ) = (# of secondaries)/ (number of primaries)
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Electron-Electron Scattering Metal EfEf Insulator E a = electron affinity = E vac - E c Vacuum Level (E vac ) ФoФo Ф o = work function = E vac - E f EcEc EaEa Electrons Holes Many final states availableFew final states available
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Secondary Electron Emission Coefficient
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Secondary Emission Coefficients Materialδ max E max Materialδ max E max Al1.0300 VNaCl141200 V Be0.5200BeO3.42000 Ni1.3550MgO20-251500 Si1.1250GeCs7700 W1.4650Glasses2-3300-450 From Handbook of Physics and Chemistry
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Secondary Emission Ratios
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Types of Electron Multipliers
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Characteristics of Dynode Types
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PMT Timing Measurements
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Timing Data for PMT Dynode Types
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Microchannel-Plate PMT
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MCP-PMT Construction
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MCP-PMT High gain/compact size 2D detection with high spatial resolution Fast time response Stable in high magnetic fields Low power consumption and light weight
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MCP-PMT Gain
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Photomultiplier Limitations Dark current Drift Response time Saturation: space charge limit Tube damage at high illumination (anode current limit)
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Dark Current vs. Temperature
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Anode/Cathode Sensitivity Radiant Sensitivity: photocurrent per incident radiant flux at given wavelength (A/W) Luminous Sensitivity: photocurrent per incident luminous flux from tungsten lamp at 2856K (A/lm)
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Luminous Sensitivity
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