1. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 1 Evaluation of HiCUM for Modeling DC, S-parameter and Large-Signal Characteristics of SiGe HBTs M.R.Murty, D.Sheridan, D.Ahlgren and D.Harame Communications R&D Center IBM Microelectronics Essex Junction, VT

2. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 2 Transistor Structures used for Parameter Extraction: (0.32, 0.48, 0.64, 0.96) m x 8.4 m with a CBEBC layout Scaling by TRADICA and Models extracted on structures with a CBE layout Simulations and Optimizations done in ADS2001 & ADS2002. Technology Details:High-Speed and High-Breakdown Versions with ~47GHz and 27 GHz fT and BVCEO of ~3.5V and 5.5V. Model Extraction Methodology and Technology Details

3. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 3 Parameter Extraction Base Resistance Ring-Emitter Structures (several Ws and 2 Ls) Emitter Resistance Modified Open-Collector Method Collector Resistance Test Structures Capacitances Cold S-Params + Large area monitors Avalanche Parameters: Ib vs Vbc Characteristics Current Parameters Gummels and Output Curves Transit Time Parameters: Test Transistors (several Ws and one long L)

4. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 4 Ic & Ib (A) Gummel Curves and Forward Gain -0.32 um x 16.8 um, HB device

5. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 5 Output Curves -0.32 um x 16.8 um, HB device

6. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 6 S-Parameter Results Bias Points: Vbe = 0.82 V, 0.90 V, 0.93 V and Vce = 2 V. (1 below ft peak, one at peak ft and one past ft peak) Frequency range: 2-40 GHz. Optimizations were done using Y-parameters (in ADS). Ft-Ic: Vcb = -0.3, 0, 1.0, 2.0, 3.0 V

7. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 7 Phase(S11) S11 -0.32 um x 16.8 um, HB device o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model

8. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 8 o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model S21 -0.32 um x 16.8 um, HB device

9. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 9 o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model S12 -0.32 um x 16.8 um, HB device

10. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 10 o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model S22 -0.32 um x 16.8 um, HB device

11. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 11 o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model |H21| and MAG/MSG -0.32 um x 16.8 um, HB device

12. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 12 o Measurement __ Model (Vcb = -0.3, 0, 1, 2, 3 V) |fT vs Ic -0.32 um x 16.8 um, HB device

13. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 13 Intermodulation Distortion Results Measurements done using ATN Load-pull system and Simulations Using Harmonic Balance 2-tone Simulations and Intermodulation Distortion with 50 termination, Sheridan, Murty and others CMC,April 2001 (PortoRico) & present work 1-tone Simulations and harmonic Distortion with a 50 termination Schroter et.al., IEEE TED, 47, pp1529-1535 (2000) 2-tone Intermodulation Distortion with matched load and source Murty et.al., (To be published)

14. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 14 Pout, IM3, IM5 (dBm) Ic & Ib (mA) o Vbe = 0.9109 V, Vce= 2 V,f= 900 MHz, =0.1 MHz |Pout, IM3, IM5, Ic and Ib -0.32 um x 16.8 um, HB device __ Hicum simulations using Harmonic Balance __ Hicum

15. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 15 Conclusions Hicum Model is developed for a SiGe process and good fits demonstrated for DC, S-parameter and Large-signal characteristics. The simulations were done in ADS2001/02 and the model implementation is found to be robust. (at least at the device level)

16. SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 16 ACKNOWLEDGEMENTS Thanks to M.Schroter, K.Newton, W.Ansley for many useful discussions