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Thin films technology for RICH detectors Functionality Production technologies Performance Presented at the CBM-RICH workshop 06-07 March 2006 André Braem, CERN, PH-DT2 department
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Thin films in RICH detectors The light yield is directly proportional to the performance of the coatings Reflective coating (R~90%) Anti-reflective coating (T 92% ~98%) Photocathode (QE ~25%) Wavelength shifter
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Reflective coatings Substrate (glass, Be, plastics…) Adherence and barrier layer Metallic reflector Protection and reflectance enhancement dielectric layers
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Adherence and barrier under-layer A thin (~20nm) layer of Chromium or Nickel is generally used to promote adherence on most substrates. A barrier layer (SiOx, CrOx…) is mandatory when the substrate material risks to react with the metallic reflective layer. Inter-diffusion of aluminum (reflective layer) and gold (replicated substrate) : Cr + SiO diffusion barrier (CF mirror of CERES inner RICH) A B C 2 months at 100˚C : Au Cr + SiO Al + MgF 2 glass Al + MgF 2 Au glass Al + MgF 2 glass
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Metallic reflective coatings Aluminum is the best metallic reflector for a broad band reflectivity in the far UV. 220 < < 600 nm R~90% in VUV the reflectivity of aluminum is strongly dependent on: -The production parameters such as vacuum quality, deposition rate etc.. -The substrate roughness (<1.5nm rms) -The surface oxidation a protective layer is required. Magnesium fluoride is commonly used as single protective layer for VUV mirrors “Standard” VUV coatings for Cerenkov detectors: DELPHI, CERES, HADES, COMPASS…
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Metal multi-dielectrics reflective coatings Reflectivity enhancement at given wavelength by exploiting interferences Aluminum over coated with n pairs of transparent films of high (H) and low (L) refractive index. Al reflector Cr adherence layer n pairs LH photons substrate low index high index low index high index inc. Dielectric films like SiO 2, MgF 2 (L-materials) or HfO 2, Nb 2 O 5, TiO 2 (H- materials) are used. Hard mirror surface can be achieved good mechanical protection Technology limited for > 220nm due to the lack of H-materials which are transparent in VUV.
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Metal multi-dielectrics reflective coatings Simulated reflectivity of aluminium + pairs of SiO2 – HfO2 layers optimized for = 300nm
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Reflective coating optimized for LHCb RICH2 = 0.176 = 0.149 620 413 310 248 206 Detection efficiency of an HPD detector (quartz window), with and without double reflection from the coated mirror, inc. = 30º. Reflectivity of Al + 1 pair SiO 2 /HfO 2 on glass, nc. = 30º Absorbance in HfO 2 film ! [nm] Measurement Simulation
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Anti reflective single layer coatings MgF2 is generally selected for single layer broad band AR coatings On quartz: Optimum n 1 = 1.22 ! n MgF 2 (250nm) =1.412 ! The surface reflectivity is reduced by a factor 2. Low refractive index (1.2 < n < 1.4) can be obtained with porous sol gel silica coatings. Best performance if
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Anti reflective multi-layers coatings Pairs of low and high refractive index materials Many solutions are available in coating industry for UV-VIS light. Low residual reflectivity but in a reduced band width !
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Coating technology Thickness monitor Substrate (rotation) Metals and dielectrics are evaporated in a high vacuum deposition plant. Aluminium is evaporated from a Tungsten filament Dielectrics are evaporated from an electron gun source
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Deposition parameters LayerRate [nm/s]Thickness [nm]Pressure [mb] Cr0.2101x10 -7 Al>20852x10 -7 MgF 2 1.531 1 2x10 -7 SiO 2 0.2 38 2 2x10 -5 (O 2 ) HfO 2 0.228 2 2x 10 -5 (O 2 ) 1 Optimized for =160nm 2 Optimized for =275nm - Substrate roughness - Residual pressure - Aluminium deposition rate - Delay between Aluminium and MgF 2 depositions Well known technology available from most industrial partners But for optimal reflectivity in VUV some critical parameters must be well under control:
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Series production of mirrors for LHCb RICH2 @ CERN Average reflectivity (250-350 nm)
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 VUV reflectivity measurements Essential for the production of VUV mirrors ! 250225207190183175155 nm
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Photocathodes for RICH detectors 1). Alkali halide in gas photodetectors - Large area CsI reflective photocathodes - Sensitive in the 7.75 - 6.2 eV range - Robust and transferable (in moisture free environment) e-e- h 2). Bi-alkali Antimonide in vacuum tubes - Semitransparent encapsulated photocathodes - Sensitive in the 2 – 4 eV range (K 2 CsSb + UV extended glass window) h e-e-
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 HPDs : PC and detector assembly inside vacuum chamber CsI PC: coating under vacuum and detector assembly under gas PCB production CsI depositionPC transfer & storage detector assembly & operation Need state of the art technologies (UHV, chemistry, thin film coating, vacuum sealing, encapsulated electronics) Operational photon-detector Focusing electrodes Silicon sensor FE electronics Vacuum seal Photocathode processing Photocathodes for RICH detectors
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 CsI Photocathodes production Remote controlled enclosure box protective box pcb substrate Uniform deposition of 300 nm CsI Deposition rate: ~1nm/s Substrate temperature: 60˚C Pressure ~6 x 10 -7 mb Heat post-treatment: 60˚C, 8-12hrs CsI PC transferred in a protection box under Argon atmosphere after quality control 4 CsI sources + shutters Thickness monitor PCB substrate Vacuum evaporation of CsI powder from 4 sources.
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 CsI photo-current measurements QE obtained from test beam measurement on 6 CsI PCs Photo-current scan on PC46: Mean value = 3.71 min-max variation 6% All CsI data from H.Hoedlmoser CERN ALICE/HMPID
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Series production of CsI PCs Initial current level before heat enhancement phase Current level after enhancement phase
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Development of HPD vacuum tubes at CERN 5” HPD Indium joint h e-e- Si sensor Front end electronicsIn silicon: 3.6eV 1 e/h pair 20keV 5000 e/h dV = 20kV E e = 20 keV 10” HPD PET HPDSpherical HPD Bi-alkali photocathode
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 The HPD development plant “External” photocathode process Ultra-high vacuum technology
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Radial dependence of HPD (PC68) QE for =230, 290 and 350 nm. QE of a K 2 CsSb photocathode (HPD PC87) Performance of bi-alkali photocathodes
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Wavelength shifters coatings A dedicated plant has been set-up for coatings on PMTs Vacuum evaporation from a molybdenum crucible: Pressure ~5x10 -5 mb Thickness >1 m Rate > 10 nm/s Vaporization temp. < 200˚C Weak mechanical resistance A protective layer of 30nm MgF 2 is required ! P-Terphenyl: Absorbtion range 110-360 nm ; emission peak at 385 nm Inhomogeneous coatings on glass surfaces Alternative coating method: Solvent spray with transparent binder
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Performance of P-Terphenyl Publication of G.J.Davis NIM B 117(1996) 421-427 Ext. QE: N ph emitted (4 ) / N ph incident External QE of p-terphenyl at ~optimal thickness P-terphenyl evaporated at pressure of 1-1.5 x 10 -1 Torr Deterioration in efficiency of p-terphenyl after a six month period (175 nm incident light)
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Summary and conclusions The light yield is directly proportional to the performance of the coatings Coatings exist for high reflectivity, AR, photosensitivity, WLS For detectors in the visible/near UV range standard industrial solutions exist. For applications in the far UV / VUV technical challenge and cost increase drastically. Reliability and long term stability become issues. Functional coatings play an important role at various places in a Cherenkov detector. The light yield is directly proportional to the performance of the coatings. Coatings exist for high reflectivity, Anti-reflection, photosensitivity and Wavelength shifting. For detectors in the visible/near UV range standard industrial solutions are available. For applications in the far UV / VUV technical challenge and cost increase drastically. Reliability and long term stability become issues.
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Spares
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 CsI quality control: VUV-scanner Reference CsI PM PC current reading D 2 light source + 100V PM Translation stage 2d scan of photo-current across the whole photocathode Relative measurement to a reference CsI photomultiplier
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 CsI deposition performed at 60°C All PCs have similar initial response Heat post treatment at 60°C for 24hrs The PC response increases 20-50% during the first hours. Heat post-treatment
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A. Braem, CERN PH-DT2 CBM-RICH workshop March 2006 Heat post-treatment Decreasing response observed on some PCs ! The presence of residual water in the vacuum chamber is believed to strongly influence the photo-emission properties of the highly hygroscopic CsI film !
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