1. SILECS CONFIDENTIAL June 2005 Silecs Product Presentation June 2005

2. SILECS CONFIDENTIAL June 2005 Silecs Spin-on Polymers, Use and Benefits SLX28E : Organosiloxane SLX28D : Organosiloxane SLX24 ULK : Low-K Organosiloxane SG200 : Methylsiloxane P1DX : Low T cureable Organosiloxane (in development) SLX28ESLX28DSLX24 ULKSG200P1DX Polymer Type k ~ 3 Organosiloxane k ~ 2.9 Organosiloxane Low-k (k < 2.8) Organosiloxane MethylsiloxaneOrganosiloxane Use PMD, sub-Al IMD, thick film applications, MEMS PMD, sub-Al IMD, furnace or UV curable, adhesion promoter Low-k IMD, devices requiring low refractive index films Sub-Al IMD, BPSG leveling, partial and total etchback planarization Low temperature cure applications, optics, CMOS sensor, MEMS Benefits High cracking threshold (~2 µm single coat), high modulus & hardness, gap fill, thermal stability, adhesion UV sensitive – high modulus and hardness, low cure temperature, extremely thin films Small pore size and short pore interconnect length, hardness & modulus, adjustable k and RI Low cost, gap- fill and planarizing dielectric layer ~ 200 C cure temperature, adhesion, moisture barrier

3. SILECS CONFIDENTIAL June 2005 Silecs SLX28E

4. SILECS CONFIDENTIAL June 2005 SLX28E : Organosiloxane Polymer 1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of >600nm thickness films. 3. 24-hour water immersion 4. Measured at 0.5MV/cm and 23 ºC 5. Furnace cure = 450 ºC for 3 hr SLX28E polymer designed for: - High thermal stability - High mechanical properties - K ~ 3 - High single coat thickness cracking threshold - Sub-Al BEOL planarization and passivation layers - Aggressive, high aspect ratio feature fill - Low etch rate in aqueous HF - Film stability (no water absorption) - UV curable

5. SILECS CONFIDENTIAL June 2005 SLX28E : Properties vs. Cure Method SLX28E Furnace Cure 450 º C; 1hr UV Cure @ 400 º C; 5min (initial results) films baked to 150 º C prior to UV cure Electrical (k-value) 3.02.86 Mechanical (E / H GPa) 8.2 / 1.111.1 / 1.5

6. SILECS CONFIDENTIAL June 2005 SLX28E : Film Properties vs. Furnace Cure T All cure times in this study are 1 hr. A ramp up to/from 200 ºC @ 10 ºC/min applied

7. SILECS CONFIDENTIAL June 2005 SLX28E : Local Planarization vs. Furnace Cure T All cure times in this study are 1 hr. A ramp up to/from 200 ºC @ 10 ºC/min applied 350 C 500 C Local planarization established during the coat and bake process. Cure temperature has no impact on planarization. SLX28E begins cross-linking at ~ 225 ºC. Once the film is cross-linked further thermal process have little effect on planarization.

8. SILECS CONFIDENTIAL June 2005 SLX28E : Feature Fill & HF Resistance Complete fill of a highly recessed 500nm wide space through a 10nm wide opening. The SLX28E within the recessed feature and narrow slot is completely resistant to 25:1 DHF Al (mostly eteched) PECVD SiO 2 SLX28E 450 ºC furnace cure for 1hr, SEM cross-section, 25:1 DHF wet etch for 60s SLX28E PECVD SiO 2 Topography formed by Al-line and cusped CVD SiO 2 is used to simulate that found in advanced pre-metal dielectric (PMD) applications. No etching of the SLX28E within the TEOS trench features occurs with the partially aqueous HF wet etchant. The TEOS lines features are etched. No cracking or other film defects observed 750 ºC RTP cure for 5min, SEM cross-section, partially aqueous HF etch for 60s SLX28E HF etched TEOS Si 3 N 4

9. SILECS CONFIDENTIAL June 2005 Silecs SLX28D

10. SILECS CONFIDENTIAL June 2005 SLX28D : Organosiloxane Polymer SLX28D polymer designed for: - Reduced furnace cure temperature and time - High sensitivity to UV cure (photo-crosslinking) - K < 3 - No silanol or water byproducts - Film stability (no water absorption) - Planarization & feature fill - Adhesion to dissimilar films - Low etch rate in aqueous HF 1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of >600nm thickness films. 3. 24-hour water immersion 4. Measured at 0.5MV/cm and 23 ºC 5. Furnace cure = 450 ºC for 1 hr

11. SILECS CONFIDENTIAL June 2005 SLX28D : Properties vs. Cure Method SLX28D Furnace Cure 450 ºC; 1hr UV Cure @ 400 ºC; 5min (initial results) films baked to 150 ºC prior to UV cure Electrical (k-value) 2.872.98 Mechanical (E/H GPa) 4.3 / 0.3815.3 / 2.1

12. SILECS CONFIDENTIAL June 2005 SLX28D : Film Properties vs. Furnace Cure T All cure times in this study are 1 hr. A ramp up to/from 200 ºC @ 10 ºC/min applied

13. SILECS CONFIDENTIAL June 2005 SLX28D : Film Properties vs. UV Cure Temperature Films baked to 150 ºC prior to UV cure; all UV cure times are 5 min.

14. SILECS CONFIDENTIAL June 2005 SLX28D : High Aspect Ratio Gap Fill Complete and defect free fill of a highly recessed 500nm wide space through a 10nm wide opening. The SLX28D within the recessed feature and narrow slot is completely resistant to 25:1 DHF. 25:1 DHF test used for two reasons: a) test wet etch resistance of SLX28D within narrow high aspect ratio features, b) to delineate SLX28D fill from PECVD SiO 2 and Al layers. Topography formed by Al-line and cusped CVD SiO 2 is used to simulate that found in advanced pre-metal dielectric (PMD) applications. 450 ºC furnace cure for 1hr, SEM cross-section, 25:1 DHF wet etch for 60s PECVD SiO 2 SLX28D Al SLX28D PECVD SiO 2

15. SILECS CONFIDENTIAL June 2005 Silecs SLX24 ULK

16. SILECS CONFIDENTIAL June 2005 SLX24 ULK : Organosiloxane Low-K Polymer SLX24 ULK polymer designed for: - Low k applications (k can be adjusted from 2.8 to 2.0; data within for k=2.5 film) - Low RI applications - Low % porosity for targeted k value - Small pore diameter - Short pore interconnection length - High mechanical properties at targeted k - Sensitivity to UV curing - Stability (no water absorption) 1. Measured using MIS structure and Hg-probe. 2. Modulus & hardness based on Nanoindentation of >600nm thickness films. 3. Pore Volume (%) estimation based on RI, EP and PALS data for k=2.5 film 4. 24-hour water immersion 5. Measured at 0.5MV/cm and 23 ºC 6. Cure = 300 ºC, 1hr + 525 ºC, 1hr

17. SILECS CONFIDENTIAL June 2005 SLX24 ULK : Properties vs. Cure Method SLX24 ULK Furnace Cure 450 º C; 1 hr Furnace Cure 300 º C; 1hr + 525 º C; 1hr UV Cure @ 400 º C; 5min (initial results) films baked to 150 º C prior to UV cure Electrical (k-value) 2.562.532.58 Mechanical (E / H GPa) 4.0 / 0.476.3 / 0.656.8 / 0.93 Porosity (%)202218

18. SILECS CONFIDENTIAL June 2005 SLX24 ULK : Film Properties vs. % Pore Monomer All samples furnace cured at 450 º C for 1 hr Normalized Conc. (%)  % Monomer component included in final polymeric structure for pore generation

19. SILECS CONFIDENTIAL June 2005 SLX24 ULK : Pore Diameter & Interconnect Length Normalized Conc. (%)  % Monomer component included in final polymeric structure for pore generation Pore diameter

20. SILECS CONFIDENTIAL June 2005 SLX24 ULK : Film Properties vs. Cure Temperature Std furnace cure  1 hour at given temp Alt furnace cure  1 hour 300 ºC hold + 1 hour at given temp with

21. SILECS CONFIDENTIAL June 2005 Silecs SG200

22. SILECS CONFIDENTIAL June 2005 SG200 : Methylsiloxane Polymer SG200 polymer designed for: - Partial and total etchback planarization processes - Sub-Al IMD layer, BPSG leveling - Defect free fill of features as narrow as 200nm in width - Low cost - K ~ 4 - Adhesion to underlying and capping dielectric layers - Robust to material aging (good shelf life resilience) - SG300 available (~320nm @ 3000 rpm) 1. Measured using MIS structure and Hg-probe. 2. Measured at 0.5MV/cm and 23 º C 3. Cure = 425 º C for 1 hr 4. Double coated film (thickness ~ 450nm)

23. SILECS CONFIDENTIAL June 2005 SG200 : Planarization – Double Coat Planarization : Double Coat (Cured Film Thickness = 500 nm) 100nm CVD SiO 2 Liner SG 200 Spin-on Glass 900nm High Molybdenum Lines (varying line and space width) Defect free fill of 900nm high line structures Cure temperature within range studied has minimal impact on feature planarization

24. SILECS CONFIDENTIAL June 2005 SG200 : Planarization – Single Coat Planarization : Single Coat (Cured Film Thickness = 250 nm) Void Free Fill Observed for Line Feature Aspect Ratios > 2 line spacing: 370 nm line spacing: 290 nm Test Structure: 650nm High CVD TEOS SiO 2 Line Slot Structures The 900nm high 1:0.75 pitch metal line feature is ~50% planarized by a 250nm thick film of SG200 No film remains on top of the metal line feature

25. SILECS CONFIDENTIAL June 2005 SG200 : Film Properties vs. Cure Temperature All samples furnace cured in N 2 for 1 hr with a 200 º C ramp to/from target cure temperature The refractive index and leakage current data indicate that the optimum cure temperature is > 400 °C

26. SILECS CONFIDENTIAL June 2005 SG200 : Planarization vs. Material Aging No change in the planarization capability of the SG200 film noted as a result of both aging tests Minimal to no change in other masurable film properties (thickness, refractive index, dielectric constant) noted as a result of material aging Samples aged to 9 days at 40 º C and 41 days at 22 º C Non-Aged Sample Sample aged at 22 ° C for 41 days

27. SILECS CONFIDENTIAL June 2005 Silecs P1DX (Experimental Product)

28. SILECS CONFIDENTIAL June 2005 P1DX : Low Temperature Cure Siloxane P1DX Siloxane polymer design goals: - Fully cured at temperature of ~ 200 º C - Excellent adhesion to a variety of substrates (SiO 2, polyimides, acrylates, … ) - Ability to control coat polymer properties to permit conformal to non- conformal coating - Stable, passivation film, excellent moisture barrier - For application of interest, RI required to be between 1.4 and 1.6 in the visible range P1DX is still under development for applications in the CMOS Sensor technology, other optics applications, MEMS, areas where low temperature cure are required.

29. SILECS CONFIDENTIAL June 2005 P1DX : Summary of Results to Date (polymer A) Optical properties: –Index of refraction = 1.45 @ 632.8nm –Extinction co-efficient = 0 @ 632.8nm Polymer is fully cross-linked after a 150 o C (5min) or 150 o C (5min) + 200 o C (60min) cure; N 2 ambient Polymer contains some residual silanol groups after both tested cure procedures –Bake conditions need to be optimized Scored Scotch tape adhesion test to silicon and SiO 2 : –150 o C => poor –150 o C + 200 o C => good Chemically and optically stable against hot water soak test (sample immersion in a 75 ºC water bath for 5 min)

30. SILECS CONFIDENTIAL June 2005 P1DX : Summary of Results to Date (polymer B) Optical properties: –Index of refraction = 1.41 @ 632.8nm –Extinction coefficient = 0 @ 632.8nm Polymer is fully cross-linked after a 150 o C (5min) or 150 o C (5min) + 200 o C (60min) cure; N 2 ambient Polymer contains minor residual silanols after 150 o C cure, but is completely silanol free after the 150 o C + 200 o C cure –Minor cure condition optimization needed Scored Scotch tape adhesion test to silicon and SiO 2 : –150 o C => poor –150 o C + 200 o C => good Chemically and optically stable against hot water soak test (sample immersion in a 75 ºC water bath for 5 min)