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Bump Bonding and Thinning of Hybrid Pixel Detectors Kiyoshi Tanida (RIKEN) Johann M. Heuser (RIKEN) PHENIX upgrade workshop, Aug 2002 Contents Bump bonding of hybrid Si pixel detector R&D study @CERN Thinning Status of PHENIX activities Summary
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Bump bonding of hybrid Si pixel detectors Hybrid -- sensor/readout chip separately produced bonding High density -- wire bonding impossible Bump bonding readout chips sensor
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Bump bonding of hybrid Si pixel detectors (2) Advanced technology -- a small number of specialized vendors available worldwide. Material: Solder or Indium Maximum wafer size Minimum wafer thickness Significant R&D required
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R&D study @CERN ALICE, LHCb, NA60 in collaboration with VTT company, Finland. 1 cell: 50 m x 425 m Bump size: 20 m single chip (32x256 cells) multi chip ladder (5 chips) -- successful R&D for whole 8" wafer ongoing 425 m 50 m
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Thinning Necessary for shorter radiation length Not yet done -- R&D ongoing at CERN goal sensor: 300 m 200 m readout chip: 750 m 150 m Performed before dicing dicing/bump bonding difficult low mass readout bus also required
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Status of PHENIX activities Just started. Will learn from CERN experience RIKEN is now contacting CERN to access thinning and bump bonding technologies.
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Summary Bump bonding -- significant R&D required for thinned whole wafer CERN is leading R&D studies Thinning is also an important R&D issue PHENIX has started to access these technologies via RIKEN effort. We will learn from CERN experience.
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