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SIMS: Secondary Ion Mass Spectroscopy
Principle Ion source O2+, Cs+ V=6KV DeltaV=5KV Ion gun Magnetic Arm V=5KV Secondary Chamber (sample loading) Wire Chamber Primary Chamber (target)
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The beam is scanning (and escavating) the sample
um Restricted region analyzed (to avoid scattering from walls) 0.5-2 um Measured with AFM
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Readout is switched between Si, Al, B/P for every point.
Counts (log scale) Si (bulk), constant B or P,As, decreasing as a function of time (depth) t Si (bulk), constant B or P,As (implant), constant NIST control sample (B or P implant with constant density in silicon bulk) time converted to depth by using the AFM measurement t
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Still waiting for n-in-n results...
n-in-p: pixel implant n+ window (pixel): 3 points for each of the two samples
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moderated p-spray
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non-moderated p-spray
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back contact
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Still waiting for final n-in-n numbers
Reasonable values for pixel and high-low pspray Something strange in the back metal (at least for the measurements done while I was here) Contamination from the wet etching?
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Next PPS meetings 1) Mini PPS meeting (phone): 13 Dec 4pm
- short, 1-2 hours just summary of activities 2) PPS General meeting (CERN): Feb 15th (?) - 1 day with possible overspill to 16th 3) PPS General meeting: Liverpool End May/ Beg June (?) (attached to the RD50 workshop) For 1) we might want to provide some material For 2) and 3) we should prepare talks
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