1. SIMS: Secondary Ion Mass Spectroscopy
Principle
Ion source
O2+, Cs+
V=6KV
DeltaV=5KV
Ion gun
Magnetic Arm
V=5KV
Secondary Chamber
(sample loading)
Wire Chamber
Primary Chamber
(target)

3. The beam is scanning (and escavating) the sampleum
Restricted region analyzed
(to avoid scattering from walls)
0.5-2 um
Measured with AFM

5. Readout is switched between Si, Al, B/P for every point.
Counts (log scale)
Si (bulk), constant
B or P,As, decreasing as a
function of time (depth) t
Si (bulk), constant
B or P,As (implant), constant
NIST control sample
(B or P implant with constant density in silicon bulk)
time converted to depth by
using the AFM measurement t

6. Still waiting for n-in-n results...
n-in-p: pixel implant
n+ window (pixel):
3 points for each of the two samples

7. moderated p-spray

8. non-moderated p-spray

9. back contact

10. Still waiting for final n-in-n numbers
Reasonable values for pixel and high-low pspray
Something strange in the back metal
(at least for the measurements done while
I was here)
Contamination from the wet etching?

11. Next PPS meetings 1) Mini PPS meeting (phone): 13 Dec 4pm
- short, 1-2 hours just summary of activities
2) PPS General meeting (CERN): Feb 15th (?)
- 1 day with possible overspill to 16th
3) PPS General meeting:
Liverpool End May/ Beg June (?)
(attached to the RD50 workshop)
For 1) we might want to provide some material
For 2) and 3) we should prepare talks