Download presentation
Presentation is loading. Please wait.
Published bySophie Wilkinson Modified over 9 years ago
1
15-17 December 2003ACFA workshop, Mumbai - A.Besson R&D on CMOS sensors Development of large CMOS Sensors Characterization of the technology without epitaxy R&D on fast sensors R&D on fast sensors Summary Summary Auguste Besson on behalf of IRES/LEPSI (Strasbourg, France): M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean, S. Heini, A. Himmi, Ch. Hu, K.Jaaskelainen, H. Souffi-Kebbati, I. Valin, M. Winter, G. Claus, C. Colledani, G. Deptuch, W. Dulinski (M6/M8 DAPNIA: Y. Degerli, N. Fourches, P. Lutz, F.Orsini)
2
15-17 December 2003ACFA workshop, Mumbai - A.Besson2 R&D strongly depends on the fabrication technology Need to explore the different fabrication processes Key parameters: –Epitaxial layer ( ≳ 5µm) –Feature size ( ≲ 0.35µm) –Leakage current –Metalisation (3-5 metal layers) –Etc. Main features of CMOS Sensors 20-40µm Preamplifier (1 in each pixel) Thermal diffusion of electrons High (p-well) Moderate (Epitaxial layer) High (subtrate) P doping Free electron in the conducting band Potential in the diode region Particle path Charge collecting diode Develop. of large CMOS Sensors Caracterization of the technology without epitaxy R&D on fast sensors (SOC) R&D on fast sensors (SOC)
3
15-17 December 2003ACFA workshop, Mumbai - A.Besson3 Main streams of the R&D Beam tests at CERN-SPS in 2003 (120 GeV/C - ) Beam tests at CERN-SPS in 2003 (120 GeV/C - ) M5 (reticle size) M4 and SUC2 (no epitaxy) Laboratory testsLaboratory tests M6 (fast data treatment)
4
15-17 December 2003ACFA workshop, Mumbai - A.Besson4 Large CMOS sensors (1) M1/2 (20 µm pitch) – sp ~ 1.5/2.2 µm with 14/4 µm epitaxial – 1 ≳ 99% ; 2 ~ 98.5% Mimosa 5 –AMS 0.6 µm process –Reticle size 19.4 x 17.4 mm 2 –4 submatrices –512 x 512 pixels (/each of 4 submatrices) Performances –6 wafers (6”) fabricated in 2001 –3 wafers thinned down to 120 µm det ~ 99% ; sp ~ 2 µm; ~ 0.3 % Mimosa 5 layout
5
15-17 December 2003ACFA workshop, Mumbai - A.Besson5 3-T large CMOS sensors (2) Beam tests at SPS (2003) –3 sensors Performance uniformity tests –Between sub-matrices and sensors –Diode size comparisons Signal/noise seed pixel Big diode (5x5 µm 2 ) Signal/noise seed pixel Small diode (3x3 µm 2 ) Total Charge in N pixels
6
15-17 December 2003ACFA workshop, Mumbai - A.Besson6 Large CMOS sensors (3) STAR experiment : extension of the Vertex detector (2006) –Charm physics small radius, granular and thin detector –2 layers of pixels ≳ 1000 cm 2 ; R layer1 ≳ 2 cm; R layer2 ≲ 4 cm M5 performances are close to STAR requirements Started a collaboration with LBL and BNL What to improve ? read out time ~ 24 ms < 20 ms sensor thickness ~ 120 µm ≳ 50 µm leakage current (because of room T) yield (not crucial) First mimo-STAR prototype in summer 2004 (TSMC 0.25 µm tech.)
7
15-17 December 2003ACFA workshop, Mumbai - A.Besson7 No epitaxial layer prototypes Properties (M4) –AMS 0.35 µm without epitaxial layer low doping substrate increases µ e –120 GeV/c - SPS beam tests eff ≳ 99.5% ; sp ~2.5 µm (20 µm pitch) Application to the European Project for biomedical imaging SUCIMA (SUC2) –beam monitoring and dosimetry –less granularity needed eff ≳ 99.9% ; sp ~5-6 µm (40 µm pitch) Submission of Mimosa 9 with AND without epitax. layer in a single AMS 0.35 µm batch (January 2004) Fabrication processes with epitaxial layer are not mandatory ! M4 Total charge in N pixels M4: Signal/Noise in seed pixel
8
15-17 December 2003ACFA workshop, Mumbai - A.Besson8 R&D on fast sensors (1) R&D on fast sensors (1) M1-M5 1M pixels read out in 1-10 ms FLC 1 st VD layer must be read out in 25-50 s – potentially tremendous data flow: e.g. 15 bits/pixels, t~25 s 500 Gbits/s/10 6 pixels! –main goal: fast signal treatment AND data compression integrated in the sensor Fast // read-out of short columns Different prototypes with different signal treatment: –M6 (with DAPNIA): tests with 55 Fe in 2003, individual pixels and discri work fine, but large spread of pixel caracteristics (pedestal, noise, gain ?) –M7: available, tests in 2003-04 –M8 (with DAPNIA): submitted in Nov., tests in 2004 (beamstrahlung)
9
15-17 December 2003ACFA9 R&D on fast sensors (2) R&D on fast sensors (2) Mimosa 6 (IRES-LEPSI/DAPNIA) 0.35 µm MIETEC techno. 30 columns of 128 pixels r.o. in // Amplification (5.5) and Correlated Double Sampling integrated in the pixel 5 MHz effective r.o. freq. Discriminator (DAPNIA) on chip periphery P diss ~ 500 µW per col. and frame r.o. cycle Mimosa 6 28 µm Distribution of signal amplitude (1pixel) Conversion gain Calib. Peak 5.9 keV Charge storage Capacitor (90 fF) AC coupling capacitor (50 fF)
10
15-17 December 2003ACFA workshop, Mumbai - A.Besson10 Summary Large sensors (M5) (1M pixels, AMS 0.6 m ) –ready to be used for a real detector –2 nd fabrication (23 wafers) with a better yield expected –thinning down to ≲ 50 µm in progress application to extension of STAR Vertex detector in 2006 No epitaxial layer sensors (M4, SUC 2) –validated for m.i.p. detection (eff ≳ 99.5%, sp ~2,5 m) –fits industrial CMOS fabrication tendency Fast response sensors (M6, M7, M8) – studies: fab. techno., charge collection system, signal treatment architecture read out speed, efficiency, zero sup., power diss. etc. 2003/2004 schedule –Large sensors: M5-B tests yield, achieve thinning –M ⋆ 1 available in summer 2004, tests in autumn –Fast sensors: M7 and M8 tests –M9 (with and without epitaxy) submitted in january 2004 –charge collection studies ionising radiation tol.
Similar presentations
© 2025 SlidePlayer.com. Inc.
All rights reserved.