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Fast high-voltage, high-current switching using stacked IGBTs

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Presentation on theme: "Fast high-voltage, high-current switching using stacked IGBTs"— Presentation transcript:

1 Fast high-voltage, high-current switching using stacked IGBTs
By: Zarir Ghasemi Supervisor: Prof. S. J. Macgregor Institute for Energy and Environment University of Strathclyde Glasgow

2 Pulsed Power System with Examples of System Components

3 Comparison of solid-state switching devices

4 An X2 Non-Inverting Blumlein Cable Generator

5 Problems associated with stacking IGBTs
Signal synchronisation Signal isolation (Magnetic or Optical ) Voltage sharing (Passive or Active snubbers) Current sharing Stack configuration Diagnostic Protection

6 Photograph of 55 IGBT stack with voltage and current ratings of 2
Photograph of 55 IGBT stack with voltage and current ratings of 2.5 kV and 250 A, respectively.

7 Voltage across the device and output pulse for two 1.2 kV IGBTs

8 Photograph of 10 kV, 400 A stack of IGBT modules consisting of 105 1
Photograph of 10 kV, 400 A stack of IGBT modules consisting of 105 1.2 kV IGBTs.

9 Photograph of 10 kV, 400 A stack of IGBT modules, optically triggered

10 Photograph of 3 kV, 2 kA Marx generator

11 Conclusion The IGBT was determined to be the preferred device for stacking IGBT’s can handle a peak current of five times their normal rating during short-pulse conducting, if they are driven by fast gate pulses. The dual degradation of the collector-emitter voltage exists in some of available IGBT devices. A prototype stack at voltage and current ratings of 10 kV and 400 A, with a voltage fall-time of about 45 ns was successfully tested. An optically-coupled stack of IGBTs with voltage and current ratings of 10 kV and 400 A was built and operated in a generator, used for Pulsed Electric Field (PEF) inactivation of microorganisms. A modular Marx generator, having an output voltage rating of 3 kV and a peak current rating of 2 kA, was designed and evaluated.


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