1. Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 1

2. Nanoelectronics became popularized by Chua in 1971 claiming [1] a circuit element existed having a resistance that depended on the time–integral of the current. Based on symmetry arguments, electronics based on the resistor, capacitor, and inductor was considered incomplete. For completeness, Chua proposed a fourth element: Memristor [1] L. O. Chua, “Memristor - the missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, pp. 507–519, 1971. Introduction 2 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

3. Background Chua lacked a working prototype, and the memristor lay dormant for almost 40 years In 2008, a group at Hewlett-Packard (HP) developed [2] a memristor comprising a thin film of TiO 2 sandwiched between Pt electrodes. 2. D. B. Strukov, et al., “The missing memristor found,” Nature 453, 7191 (2008).The missing memristor found ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 3

4. HP Memristor ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 The memristor is basically a variable resistor dependent on the current I that flows by the amount of charge Q transferred. Q =  I dt HP claims the charge is caused by oxygen vacancies in the TiO 2 that act as positive charge holes moving under the bias voltage that change the memristor resistance during the cycle 4

5. ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 Problem Memristor behavior is found without oxygen vacancies in molecular layers between gold electrodes and in single materials without electrodes, e.g., silicon nanowires Lacking vacancies, explanations of memristor behavior assume the presence of space charge, but the mechanism by which the space charge is produced is not identified. 5

6. ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 Observations Memristor behavior only observed at the nanoscale. (Thin films, nanowire, etc) At the macroscale, memristors behave like ordinary resistors where resistance is voltage divided by current. The observations suggest a QM size effect QM = Quantum Mechanics 6

7. ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 Space Charge In this talk I will convince you that QM creates charge Q anytime EM energy is absorbed at the nanoscale For memristors, the EM energy is Joule heating. But QM requires the heat capacity of the thin film to vanish so the Joule heat cannot be conserved by an increase in temperature. Instead, conservation proceeds by the QED induced creation of QED photons inside the film, the QED photons creating charge Q by Einstein’s photoelectric effect. QED = Quantum Electrodynamics 7

8. ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 d t t QED Radiation + - D I + - D L d t t Thin Film Nanowire 8 Memristor Geometry I I

9. Proposal The charge in nanoelectronic circuit elements is a QM effect caused by photolysis from QED radiation created from the conservation of Joule heat that otherwise is conserved by an increase in temperature. At the nanoscale, QM creates charge instead of the classical increase in temperature ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 9

10. Heat Capacity of the Atom 10 Nanostructures kT 0.0258 eV Classical Physics (kT > 0) QM (kT = 0) ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 In nanostructures, QM requires atoms to have zero heat capacity

11. ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 Conservation of Energy Lack of heat capacity by QM precludes Joule heat conservation in memristors by an increase in temperature, but how does conservation proceed? Conservation Proposal Generally, absorbed EM energy is conserved by creating QED photons inside the nanostructure - by frequency up or down - conversion to the TIR resonance of the nanostructure. TIR = Total Internal Reflection Up-conversion produces high energy QED photons in memristors, but down-conversion also occurs, e.g., redshift of galaxy light in dust in the 2011 Nobel in physics on an expanding Universe 11

12. Since the refractive index of the memristor is greater than that of the surroundings, the QED photons are confined by TIR (Tyndall 1870) Memristors ( films, wires) have high surface to volume ratio, but why important? Propose EM energy absorbed in the surface of memristors provides the TIR confinement of the QED photons. Since the QED photons have wave functions that vanish normal to the surface, QED photons are spontaneously created by Joule heat dissipated in memristors f = c/ = 2nd (or 2nD) E = hf TIR Confinement 12 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 For a spherical NP having diameter D, = 2D

13. ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 QED Heat Transfer 13 QED Photons Phonons Q QED is non-thermal radiation at TIR frequency Currently, K < Bulk in thin films is explained by scattering of phonons, but if Q QED is included in heat balance, then K = Bulk QED Radiation

14. QED Photons and Excitons ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 QED Photon Rate P = Joule heat E = QED Photon energy  = Absorbed Fraction Exciton Rate Y = Yield of Excitons / QED Photon 14

15. Exciton Response ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 Where, Q E and Q H are number electrons and holes, F is the field, and  E and  H are electron and hole mobility Electrons Holes 15 Solution by Integrating factor gives Taking F = Vo sin  t / d,

16. Resistance and Current ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 16  = Conductivity  = Resistivity

17. Simulation ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 17 R I d = 50 nm, f = 5 kHz, and V o = 1 V R o = 100  and P = 10 mW  H = 2x10 -6 cm 2 /V-s

18. Hysteresis Curve ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 18

19. Modern day electronics was developed for the macroscale, but a QM approach is suggested at the nanoscale where memristive effects are observed. Memristive effects in PCRAM films by melting are negated by QM. Ovshinsky’s redistribution of charge carriers by QM is more likely. Memristors have nothing to do with the notion of the missing fourth element necessary for completeness. Memristor behavior is simply a QM size effect. Conclusions 19 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

20. Expanding Unverse In 1929, Hubble measured the redshift of galaxy light that by the Doppler Effect showed the Universe is expanding. But cosmic dust of submicron NPs permeate space and redshift galaxy light without Universe expansion 20

21. ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 21 Redshift without Universe expansion Based on classical physics, astronomers assume absorbed galaxy photon increases temperature of dust NPs Redshift in Cosmic Dust

22. ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 Referring to his calculation showing acccelerated Universe expansion, Reiss is quoted as saying: "I remember thinking, I've made a terrible mistake and I have to find this mistake" Others said: “[Riess] did a lot after the initial result to show that there was no sneaky effect due to dust absorption“ Reiss did make a mistake - Redshift does occur in dust No Universe expansion, accelerated or otherwise 22 Nobel Mistake Astronomers Schmidt, Pearlmutter, and Reiss got the 2011 Nobel in Physics for an accelerated expanding Universe

23. Questions & Papers Email: nanoqed@gmail.com http://www.nanoqed.org 23 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011