Download presentation
Presentation is loading. Please wait.
1
ESE 111 – Nanofabrication and Technology
ENIAC DEC PDP-8 IBM PC Pentium 4 PC Microelectronics ==> Nanoelectronics Make this transition happen … and the other applications that are enabled by nanoscale science and technology
2
Evolution of Electronics
Vacuum tube ENIAC = Electronic Numerical Integrator and Computer First Transistor, 1947 Bell Labs Discrete Transistor
3
Intel Core i7 Processor with 45 nm Transistors
4
The Fabrication Facility of Today
300 mm wafer Fabrication Intel
5
Moore’s Law
6
Other Electronic Applications = “More than Moore” Silicon and New Materials
carbon nanotubes Rogers, UIUC Organic and nanocrystalline semiconductors Rogers, UIUC Kagan, Penn Si nanowires nanocrystals graphene organic materials carbon nanotubes
7
Alternative, Low-Cost Fabrication
Printable Electronics – Spin, Dip, Spray, Print, Imprint …. From Solution Spin-coating Printing Krebs, Denmark Dip-coating Imprinting Example: nanocrystals In general for solutions Mesopotamian Templates 600 AD 25 nm holes
8
Examples of Some Electronic and Optoelectronic Applications
Printed Electronics Samsung Konarka Solar Cells RFID Tags Poly IC Sony OLED TV E-textiles Poly IC E-Paper Plastic Logic Flexible Display
9
Flexible Electronics Analog Electronics
Scaling to allow faster operation Digital Electronics Kagan group
10
BioElectronics Litt, Penn and Rogers, UIUC Utah Electrode Array
10 x 10 array of electrodes ¼” x ¼” in size Litt, Penn and Rogers, UIUC
11
Light at the Nanoscale
12
Nanophotonics and Plasmonics
13
Description using Maxwells equation
Metal Nanoparticle Assemblies as Building Blocks for Optical Metamaterials Designing composite materials with electromagnetic properties not found in nature and not observed in the constituent materials cloaking superlenses sensors lithography a<<l Effective medium Description using Maxwells equation metatronics = optical nanocircuits Engheta, Penn
14
Designer Metamaterials
Au NC dispersion substrate PDMS template Ligand exchange Wavelength (µm) Transmittance (a.u.) d Scale bar = 1µm Kagan group
15
Nanodevices and Nanosystems Curriculum
New ESE curriculum New curriculum (class of 2018): ESE 218 Electronic, Photonic, and Electromechanical Devices (Prof. Kagan, Fall) Sophomore ESE 321 Physics and Models of Semiconductor Devices (Prof. Bassett, Fall) ESE 310 Electric and Magnetic Fields I (Prof. Engheta, Spring) Junior ESE 521 Physics of Solid State Energy Devices ESE 460/574 Semiconductor micro-fabrication ESE 525 Nanoscale Science and Engineering ESE 509 Waves, Fibers and Antennas for Communications ESE 510 Electromagnetic and Optical Theory Senior
16
ESE 218 Electronic, Photonic, and Electromechanical Devices
Intel IBM Electronics Photonics Electromechanics
17
Samsung Galaxy
Similar presentations
![EE314 Basic EE II Silicon Technology [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]](/16/5137281/big_thumb.jpg "EE314 Basic EE II Silicon Technology [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]>")
