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Published byClemence King Modified over 9 years ago
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PUT JOSH WEB- STREAM HERE
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4/30/2010 Iowa State University EE492 – Senior Design II
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International collaboration Product conceptualization & specification in addition to design Integrated circuit (IC) rather than system design Research-orientated objectives
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Design a test chip to support ISU research on electromigration & IC reliability The chip must include test structures composed of actual metal interconnects in a modern silicon process Must be capable of interfacing with a controller to allow electrothermal conditions in the chip to be varied and monitored.
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Electromigration – a complex physical phenomena that causes mechanical stress in metal interconnects Important failure mechanism in ICs Strong, non-linear dependence on current-density and temperature Need models for electromigration that predict reliability under practical conditions Electromigration in progress!
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Subject interconnects to variable electrothermal stresses Measure time-to-failure of many samples Analyze statistics, develop models, fit data, etc. Use accelerated lifetime technique Very high temperatures and current densities!
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Proposed IC contains 8 identical metal test structures Current-steering Digital-to- Analog Converter provides 0-25mA to test structure On-die analog temperature sensing circuits Open-circuit detection Control logic with serial interface Process technology: 0.18 µm standard CMOS
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Single-layer metal interconnect with serpentine pattern Metal layerM1 Width0.23 µm Equivalent lengthUp to 11.5 mm Thickness210 nm MaterialCu
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Corners reinforced to mitigate current crowding
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Current range of 0 to 25 mA 7 bit resolution LSB Current – 200 µA Current-Steering Architecture Binary-weighted sources Constant power Open Circuit Detection Two inverters on the output DAC 0010110
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Compact, CMOS-based sensor design 5 sensor distributed throughout the floor plan
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Serial interface Simple protocol Low pin-count
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Needed standard cell library for synthesis Free, scalable library did not meet design rules of our process Extensive work to customize, re-verify standard cells
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Master current switch Reference-distribution network
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Floorplan symmetry to prevent uncontrolled experimental variables Significant redundancy and reinforcement of non-test blocks for reliability Final design is 860 µm x 860 µm
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Analog verification: relevant performance parameters for each block tested over full PVT range with 500-run statistical simulations Digital verification: functional simulations, timing analysis System-level, mixed-signal verification: several long transient simulations covering typical operation sequence
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#1 VDD rises #2 Reference current starts #3 written to address reg. #4 written to address reg. #5 master current switch enabled #6 test current settles at predicted value
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DAC Temperature sensor Top-level functional
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