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Published byAbraham Cross Modified over 9 years ago
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1 Task 19 SIS100_3: Semiconductor RF Gap Switch 15.04.2005 P. Hülsmann Problem Description Beam dynamics simulations have shown that the impedance of the non-operating cavities may degrade the quality of the circulating beam at high current operation significantly. Solution Equip the gaps of the non operating cavities with fast high power switches, generating a short circuit with low intrinsic impedance. Technical Description
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2 Task 19 SIS100_3: Semiconductor RF Gap Switch 15.04.2005 P. Hülsmann Requirements on the gap switch Switch is open Frequency1 MHz Voltage25 kV Duty Cycle0,0005 Capacity<100 pF Switch is Closed Current60 A Average Power 500 W Duty cycle3% Resistance < 10
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3 Task 19 SIS100_3: Semiconductor RF Gap Switch 15.04.2005 P. Hülsmann First Tests with MosFet Gap Switch (Behlke HTS 301-12-AC-B + Cooling Fins,Category VII) Breakdown at 12 kV RF-amplitude (1 MHz) after 3 minutes (open) Due to dielectric losses, the isolation material at the high voltage output has started to boil. The isolation was damaged, but not the semiconductors. Average of 50 W reached (closed) A resistive resistance of 10 reached RF-characteristics of the switch ok Next Step Isolation of the switch with oil Status of R&D
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4 Task 19 SIS100_3: Semiconductor RF Gap Switch 15.04.2005 P. Hülsmann Work Sharing GSI Specification for manufacturing the switch Low-level tests Prototype cavity tests (0.8...5.4 MHz) CERN Prototype cavity tests (2.8...10 MHz) Design of passive network for impedance reduction Shielding experiments for improvement of radiation hardness Tentative schedule for 2005 available Organizational Issues
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5 Task 19 SIS100_3: Semiconductor RF Gap Switch 15.04.2005 P. Hülsmann Schedule (Description of Work) Personnel not yet available → 5...6 months shifted
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6 Task 19 SIS100_3: Semiconductor RF Gap Switch 15.04.2005 P. Hülsmann Costs
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