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Electrostatic Sensors and Actuators

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1 Electrostatic Sensors and Actuators
Chang Liu MASS UIUC

2 Single crystal silicon and wafers
To use Si as a substrate material, it should be pure Si in a single crystal form The Czochralski (CZ) method: A seed crystal is attached at the tip of a puller, which slowly pulls up to form a larger crystal 100 mm (4 in) diameter x 500 mm thick 150 mm (6 in) diameter x 750 mm thick 200 mm (8 in) diameter x 1000 mm thick MASS UIUC

3 Miller indices A popular method of designating crystal planes (hkm) and orientations <hkm> Identify the axial intercepts Take reciprocal Clear fractions (not taking lowest integers) Enclose the number with ( ) : no comma <hkm> designate the direction normal to the plane (hkm) (100), (110), (111) MASS UIUC

4 Stress and Strain Definition of Stress and Strain
The normal stress (Pa, N/m2) The strain Poisson’s ratio MASS UIUC

5 E: Modulus of Elasticity, Young’s Modulus
Hooke’s Law E: Modulus of Elasticity, Young’s Modulus The shear stress The shear strain The shear modulus of elasticity The relationship MASS UIUC

6 General Relation Between Tensile Stress and Strain
MASS UIUC

7 The behavior of brittle materials (Si) and soft rubber used extensively in MEMS
A material is strong if it has high yield strength or ultimate strength. Si is even stronger than stainless steel Ductility is a measure of the degree of plastic deformation that has been sustained at the point of fracture Toughness is a mechanical measure of the material’s ability to absorb energy up to fracture (strength + ductility) Resilience is the capacity of a material to absorb energy when it is deformed elastically, then to have this energy recovered upon unloading MASS UIUC

8 Mechanical Properties of Si and Related Thin Films
거시적인 실험데이터는 평균적인 처리로 대개 많은 변이가 없는데 미시적인 실험은 어렵고 또 박막의 조건 (공정조건, Growth 조건 등), 표면상태, 열처리 과정 때문에 일관적이지 않음 The fracture strength is size dependent; it is times larger than that of a millimeter-scale sample Hall Petch equation; For single crystal silicon, Young’s modulus is a function of the crystal orientaiton For plysilicon thin films, it depends on the process condition (differ from Lab. to Lab.) MASS UIUC

9 General Stress-Strain Relations
C: stiffness matrix S: compliance matrix For many materials of interest to MEMS, the stiffness can be simplified MASS UIUC

10 Flexural Beam Bending Types of Beams; Fig. 3.15
Possible Boundary Conditions MASS UIUC

11 Longitudinal Strain Under Pure Bending
Pure Bending; The moment is constant throughout the beam MASS UIUC

12 Deflection of Beams Appendix B MASS UIUC

13 Finding the Spring Constant
MASS UIUC

14 Outline Basic Principles Applications examples
capacitance formula capacitance configuration Applications examples sensors actuators Analysis of electrostatic actuator second order effect - “pull in” effect Application examples and detailed analysis MASS UIUC

15 Mechanics of Micro Structures
Chang Liu Micro Actuators, Sensors, Systems Group University of Illinois at Urbana-Champaign MASS UIUC

16 Mechanical Variables of Concern
Force constant flexibility of a given device Mechanical resonant frequency response speed of device Hooke’s law applied to DC driving Importance of resonant freq. Limits the actuation speed lower energy consumption at Fr MASS UIUC

17 Types of Electrical-Mechanical Analysis
Given dimensions and materials of electrostatic structure, find force constant of the suspension structure displacement prior to pull-in value of pull-in voltage Given the range of desired applied voltage and the desired displacement, find dimensions of a structure layout of a structure materials of a structure Given the desired mechanical parameters including force constants and resonant frequency, find dimensions materials layout design quasistatic displacement MASS UIUC

18 Analysis of Mechanical Force Constants
Concentrate on cantilever beam (micro spring boards) Three types of most relevant boundary conditions free: max. degrees of freedom fixed: rotation and translation both restricted guided: rotation restricted. Beams with various combination of boundary conditions fixed-free, one-end-fixed beam fixed-fixed beam fixed-guided beam Fixed-free Two fixed- guided beams Four fixed-guided beams MASS UIUC

19 Examples MASS UIUC

20 Boundary Conditions Six degrees of freedom: three axis translation, three axis rotation Fixed B.C. no translation, no rotation Free B.C. capable of translation AND rotation Guided B.C. capable of translation BUT NOT rotation MASS UIUC

21 A Clamped-Clamped Beam
Fixed-guided Fixed-guided MASS UIUC

22 A Clamped-Free Beam MASS UIUC

23 One-end Supported, “Clamped-Free” Beams
MASS UIUC

24 Fixed-Free Beam by Sacrificial Etching
Right anchor is fixed because its rotation is completely restricted. Left anchor is free because it can translate as well as rotate. Consider the beam only moves in 2D plane (paper plane). No out-of-plane translation or rotation is encountered. MASS UIUC

25 Force Constants for Fixed-Free Beams
Dimensions length, width, thickness unit in mm. Materials Young’s modulus, E Unit in Pa, or N/m2. MASS UIUC

26 Modulus of Elasticity Names Definition
Young’s modulus Elastic modulus Definition Values of E for various materials can be found in notes, text books, MEMS clearing house, etc. MASS UIUC

27 Large Displacement vs. Small Displacement
end displacement less than times the thickness. Used somewhat loosely because of the difficulty to invoke large-deformation analysis. Large deformation needs finite element computer-aided simulation to solve precisely. In limited cases exact analytical solutions can be found. MASS UIUC

28 Force Constants for Fixed-Free Beams
Moment of inertia I (unit: m4) I= for rectangular crosssection Maximum angular displacement Maximum vertical displacement under F is Therefore, the equivalent force constant is Formula for 1st order resonant frequency where is the beam weight per unit length. MASS UIUC

29 Zig-Zag Beams Saves chip real-estate
Used to pack more “L” into a given footprint area on chip to reduce the spring constant without sacrificing large chip space. Saves chip real-estate MASS UIUC

30 An Example MASS UIUC

31 Order of Resonance 1st order: one node where the gradient of the beam shape is zero; also called fundamental mode. With lowest resonance frequency. 2nd order: 2 nodes where the gradient of the beam shape is zero; 3nd order: 3 nodes. Frequency increases as the order number goes up. MASS UIUC

32 Resonant frequency of typical spring-mass system
Self-mass or concentrated mass being m The resonant frequency is Check consistency of units. High force constant (stiff spring) leads to high resonant frequency. Low mass (low inertia) leads to high resonant frequency. To satisfy both high K and high resonant frequency, m must be low. MASS UIUC

33 Quality Factor If the distance between two half-power points is df, and the resonance frequency if fr, then Q=fr/df Q=total energy stored in system/energy loss per unit cycle Source of mechanical energy loss crystal domain friction direct coupling of energy to surroundings distrubance and friction with surrounding air example: squeezed film damping between two parallel plate capacitors requirement for holes: (1) to reduce squeezed film damping; (2) facilitate sacrificial layer etching (to be discussed later in detail). Source of electrical energy loss resistance ohmic heating electrical radiation MASS UIUC

34 Basic Principles Sensing Actuation Two major configurations
capacitance between moving and fixed plates change as distance and position is changed media is replaced Actuation electrostatic force (attraction) between moving and fixed plates as a voltage is applied between them. Two major configurations parallel plate capacitor (out of plane) interdigitated fingers - IDT (in plane) Interdigitated finger configuration Parallel plate configuration MASS UIUC

35 Examples Parallel Plate Capacitor Comb Drive Capacitor MASS UIUC

36 Parallel Plate Capacitor
Fringe electric field (ignored in first order analysis) Equations without considering fringe electric field. A note on fringe electric field: The fringe field is frequently ignored in first-order analysis. It is nonetheless important. Its effect can be captured accurately in finite element simulation tools. MASS UIUC

37 Fabrication Methods Flip and bond Surface micromachining Wafer bonding
3D assembly Flip and bond Movable vertical plate MASS UIUC

38 Forces of Capacitor Actuators
Stored energy Force is derivative of energy with respect to pertinent dimensional variable Plug in the expression for capacitor We arrive at the expression for force MASS UIUC

39 Relative Merits of Capacitor Actuators
Pros Nearly universal sensing and actuation; no need for special materials. Low power. Actuation driven by voltage, not current. High speed. Use charging and discharging, therefore realizing full mechanical response speed. Cons Force and distance inversely scaled - to obtain larger force, the distance must be small. In some applications, vulnerable to particles as the spacing is small - needs packaging. Vulnerable to sticking phenomenon due to molecular forces. Occasionally, sacrificial release. Efficient and clean removal of sacrificial materials. MASS UIUC

40 Capacitive Accelerometer
Proof mass area 1x0.6 mm2, and 5 mm thick. Net capacitance 150fF External IC signal processing circuits MASS UIUC

41 Deformable Mirrors for Adaptive Optics
2 mm surface normal stroke for a 300 mm square mirror, the displacement is 1.5 micron at approximately 120 V applied voltage T. Bifano, R. Mali, Boston University ( MASS UIUC

42 MASS UIUC

43 MASS UIUC

44 BU Adaptive Micro Mirrors
MASS UIUC

45 Optical Micro Switches
Texas Instrument DLP Torsional parallel plate capacitor support Two stable positions (+/- 10 degrees with respect to rest) All aluminum structure No process steps entails temperature above oC. MASS UIUC

46 “Digital Light” Mirror Pixels
Mirrors are on 17 m center-to-center spacing Gaps are 1.0 m nominal Mirror transit time is <20 s from state to state Tilt Angles are minute at ±10 degrees Four mirrors equal the width of a human hair MASS UIUC

47 Digital Micromirror Device (DMD)
-10 deg Mirror +10 deg Hinge CMOS Substrate Yoke MASS UIUC

48 Perspective View of Lateral Comb Drive
MASS UIUC

49 Lateral Comb Drive Actuators
Total capacitance is proportional to the overlap length and depth of the fingers, and inversely proportional to the distance. Pros: Frequently used in actuators for its relatively long achievable driving distance. Cons force output is a function of finger thickness. The thicker the fingers, the large force it will be. Relatively large footprint. N=4 in above diagram. MASS UIUC

50 Transverse Comb Drive Devices
Direction of finger movement is orthogonal to the direction of fingers. Pros: Frequently used for sensing for the sensitivity and ease of fabrication Cons: not used as actuator because of the physical limit of distance. MASS UIUC

51 Devices Based on Transverse Comb Drive
Analog Device ADXL accelerometer A movable mass supported by cantilever beams move in response to acceleration in one specific direction. Relevant to device performance sidewall vertical profile off-axis movement compensation temperature sensitivity. * p MASS UIUC

52 Lateral comb drive banks
Sandia Electrostatically driven gears - translating linear motion into continuous rotary motion Lateral comb drive banks Mechanical springs Gear train Optical shutter MASS UIUC

53 Sandia Gears Mechanical springs Position limiter
Use five layer polysilicon to increase the thickness t in lateral comb drive actuators. Mechanical springs Position limiter MASS UIUC

54 More Sophisticated Micro Gears
MASS UIUC

55 Actuators that Use Fringe Electric Field - Rotary Motor
Three phase electrostatic actuator. Arrows indicate electric field and electrostatic force. The tangential components cause the motor to rotate. MASS UIUC

56 Three Phase Motor Operation Principle
MASS UIUC

57 Starting Position -> Apply voltage to group A electrodes
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58 Motor tooth aligned to A -> Apply voltage to Group C electrodes
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59 Motor tooth aligned to C -> Apply voltage to Group B electrodes
MASS UIUC

60 Motor tooth aligned to B -> Apply voltage to Group A electrodes
MASS UIUC

61 Motor tooth aligned to A -> Apply voltage to Group C electrodes
MASS UIUC

62 Example of High Aspect Ratio Structures
MASS UIUC

63 Some variations Large angle Long distance Low voltage Linear movement
MASS UIUC

64 1x4 Optical Switch John Grade and Hal Jerman, “A large deflection electrostatic actuator for optical switching applications”, IEEE S&A Workshop, 2000, p. 97. MASS UIUC

65 Torsional mechanical spring
Actuators that Use Fringe Field - Micro Mirrors with Large Displacement Angle Torsional mechanical spring R. Conant, “A flat high freq scanning micromirror”, IEEE Sen &Act Workshop, Hilton Head Island, 2000. MASS UIUC

66 Curled Hinge Comb Drives
MASS UIUC

67 Other Parallel Plate Capacitor - Scratch Drive Actuator
Mechanism for realizing continuous long range movement. Scratch drive invented by H. Fujita of Tokyo University. The motor shown above was made by U. of Colorado, Victor Bright. MASS UIUC

68 Analysis of Electrostatic Actuator
What happens to a parallel plate capacitor when the applied voltage is gradually increased? MASS UIUC

69 An Equivalent Electromechanical Model
x If top plate moves down- ward, x<0. Note: direction definition of variables This diagram depicts a parallel plate capacitor at equilibrium position. The mechanical restoring spring with spring constant Km (unit: N/m) is associated with the suspension of the top plate. According to Hooke’s law, At equilibrium, the two forces, electrical force and mechanical restoring force, must be equal. Less the plate would move under Newton’s first law. Gravity is generally ignored. MASS UIUC

70 Mechanical Spring Cantilever beams with various boundary conditions
Torsional bars with various boundary conditions MASS UIUC

71 Electrical And Mechanical Forces
If the right-hand plate moves closer to the fixed one, the magnitude of mechanical force increases linearly. Equilibrium: |electric force|=|mechanical force| If a constant voltage, V1, is applied in between two plates, the electric force changes as a function of distance. The closer the two plates, the large the force. X0 x Equilibrium position Km fixed MASS UIUC

72 Electrical And Mechanical Forces
V3 V2 V3>V2>V1 Equilibrium: |electric force|=|mechanical force| V1 X0 Km X0+x1 fixed X0+x2 X0+x3 MASS UIUC

73 Force Balance Equation at Given Applied Voltage V
The linear curve represents the magnitude of mechanical restoring force as a function of x. Each curve in the family represents magnitude of electric force as a function of spacing (x0+x). Note that x<0. The origin of x=0 is the dashed line. MASS UIUC

74 Determining Equilibrium Position Graphically
At each specific applied voltage, the equilibrium position can be determined by the intersection of the linear line and the curved line. For certain cases, two equilibrium positions are possible. However, as the plate moves from top to bottom, the first equilibrium position is typically assumed. Note that one curve intersects the linear line only at one point. As voltage increases, the curve would have no equilibrium position. This transition voltage is called pull-in voltage. The fact that at certain voltage, no equilibrium position can be found, is called pull-in effect. MASS UIUC

75 Pull-In Effect As the voltage bias increases from zero across a pair of parallel plates, the distance between such plates would decrease until they reach 2/3 of the original spacing, at which point the two plates would be suddenly snapped into contact. This behavior is called the pull-in effect. A.k.a. “snap in” MASS UIUC

76 fixed A threshold point Equilibrium:
VPI Equilibrium: |electric force|=|mechanical force| X=-x0/3 X0 Km Positive feedback -snap, pull in fixed MASS UIUC

77 Mathematical Determination of Pull-in Voltage Step 1 - Defining Electrical Force Constant
Let’s define the tangent of the electric force term. It is called electrical force constant, Ke. When voltage is below the pull-in voltage, the magnitude of Ke and Km are not equal at equilibrium. MASS UIUC

78 Review of Equations Related To Parallel Plate
The electrostatic force is The electric force constant is MASS UIUC

79 Mathematical Determination of Pull-in Voltage Step 2 - Pull-in Condition
At the pull-in voltage, there is only one intersection between |Fe| and |Fm| curves. At the intersection, the gradient are the same, I.e. the two curves intersect with same tangent. This is on top of the condition that the magnitude of Fm and Fe are equal. Force balance yields Plug in expression of V2 into the expression for Ke, we get This yield the position for the pull-in condition, x=-x0/3. Irrespective of the magnitude of Km. MASS UIUC

80 Mathematical Determination of Pull-in Voltage Step 3 - Pull-in Voltage Calculation
Plug in the position of pull-in into Eq. * on previous page, we get the voltage at pull-in as At pull in, C=1.5 Co Thus, MASS UIUC

81 Implications of Pull-in Effect
For electrostatic actuator, it is impossible to control the displacement through the full gap. Only 1/3 of gap distance can be moved reliably. Electrostatic micro mirros reduced range of reliable position tuning Electrostatic tunable capacitor reduced range of tuning and reduced tuning range Tuning distance less than 1/3, tuning capacitance less than 50%. MASS UIUC

82 Counteracting Pull-In Effect Leveraged Bending for Full Gap Positioning
E. Hung, S. Senturia, “Leveraged bending for full gap positioning with electrostatic actuation”, Sensors and Actuators Workshop, Hilton Head Island, p. 83, 2000. MASS UIUC

83 Counteracting Pull-in Effect: Variable Gap Capacitor
Existing Tunable Capacitor Tuning range: 88% (with parasitic capacitance) Counter capacitor plate Suspension spring d0 Actuation electrode Capacitor plate Actuation electrode NEW DESIGN Variable Gap Variable Capacitor Suspension spring Counter capacitor plate <(1/3)d0 d0 Actuation electrode Capacitor plate Actuation electrode MASS UIUC

84 Example A parallel plate capacitor suspended by two fixed-fixed cantilever beams, each with length, width and thickness denoted l, w and t, respectively. The material is made of polysilicon, with a Young’s modulus of 120GPa. L=400 mm, w=10 mm, and t=1 mm. The gap x0 between two plates is 2 mm. The area is 400 mm by 400 mm. Calculate the amount of vertical displacement when a voltage of 0.4 volts is applied. MASS UIUC

85 Step 1: Find mechanical force constants
Calculate force constant of one beam first use model of left end guided, right end fixed. Under force F, the max deflection is The force constant is therefore This is a relatively “soft” spring. Note the spring constant is stiffer than fixed-free beams. Total force constant encountered by the parallel plate is MASS UIUC

86 Step 2: Find out the Pull-in Voltage
Find out pull-in voltage and compare with the applied voltage. First, find the static capacitance value Co Find the pull-in voltage value When the applied voltage is 0.4 volt, the beam has been pulled-in. The displacement is therefore 2 mm. MASS UIUC

87 What if the applied voltage is 0.2 V?
Not sufficient to pull-in Deformation can be solved by solving the following equation or How to solve it? MASS UIUC

88 Solving Third Order Equation ...
To solve Apply Use the following definition The only real solution is MASS UIUC

89 Calculator … A Simple Way Out.
Use HP calculator, x1=-2.45x10-7 mm x2=-1.2x10-6 mm x3=-2.5x10-6 mm Accept the first answer because the other two are out side of pull-in range. If V=0.248 Volts, the displacement is mm. MASS UIUC


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