1. Metrology Roadmap Europe Rien Stoup(PAN Analytical) Mauro Vasconi (ST)
Japan Yuichiro Yamazaki (Toshiba)
Kazuo Nishihagi (Technos)
Atsuko Yamaguchi (Hitachi)
Shinji Fujii (Panasonic)
Korea
Taiwan Baw-Ching Perng (TSMC)
US Jack Martinez (NIST)
Alain Diebold (Int. SEMATECH)

2. L above 2 mm is really CD variation
LWR as a Function of L
L above 2 mm is really CD variation
2mm
CD variation
Experiments
3s (nm)
Simulation
LWR increase becomes negligible
at L=2mm
Average LWR
このグラフは検査領域内のLWRのLへの依存性です。このようなデータを実測し、またシミュレートし、LWRの増加がL=2micronで十分小さくなることを見出しました。また詳細は略しますが、1本のライン上で計測しても、LWR値は場所によってばらつきます。このばらつきもL=2micronで計測すると小さくなることが分かりました。
Inspection-area height L (nm)
Confirmed by ...
Experiments & Simulation
L value works for many resists as well as ADI, resist trim, and after etch

3. (Inter-tr. LWR+process)
L=Wg (gate width)
L=2 mm
Intra-transistor LWR
Total LWR
LWR
(Small effect on transistor
performance)
(Both intra- & inter-tr. LWR
can be extracted from this LWR)
Trench Sidewall
Roughness
Resistivity Impact
L=2 mm might be needed for reliability For electron scattering propose  Max ½ mean free path in Cu = 15 nm
Take after barrier depostion
LER Lg
Typical pattern-size
Gate CD
(CD in a limited area)
Trench + Via CD
Trench Linewidth
Contact/Via Area
Across-Wafer
CD-variation
Process-caused
CD variation
Total CD variation
(Inter-tr. LWR+process)

4. (Inter-tr. LWR+process)
L=Wg (gate width)
L=2 mm
Intra-transistor LWR
Total LWR
LWR
(Small effect on transistor
performance)
(Both intra- & inter-tr. LWR
can be extracted from this LWR)
Trench Sidewall
Roughness
Resistivity Impact
L=2 mm might be needed for reliability For electron scattering propose  Max ½ mean free path in Cu = 15 nm
Take after barrier depostion
LER Lg
Typical pattern-size
Gate CD
(CD in a limited area)
Trench + Via CD
Trench Linewidth
Contact/Via Area
Across-Wafer
CD-variation
Process-caused
CD variation
Total CD variation
(Inter-tr. LWR+process)

5. LER and LWR reported as RMS values integrated over the frequency range specified below
LWR = all spatial wavelengths between 1 micron and 20 nm taken over a 2 micron length with a spacing of 10 nm.
LER = for reliability all spatial wavelengths between 1 micron to 15 nm taken over a 2 micron length with a spacing of 7.5 nm.
LER For monitoring specular scattering – measure from 15 nm to twice the smallest interval using the smallest possible interval. Measure sidewall after barrier metal dep.

7. p=0(complete diffuse scattering) 5 p=0.3
Measured Cu resistivity
without Barrier Metal
p=0.3 4
Updated(May2004) 3
ρ(Al):2.74μΩcm
Resistivity(μΩcm) 2
p=0.5 1
100
200
300
400
500
Wire width(nm)

8. Topics for Cross TWG Meetings Litho  Metrology
LER/LWR
Presentation by Hitachi
Propose metrology centric definition in ITRS but values should be broken into low and high spatial frequency regimes and determined based on effects on device performance
Low frequency roughness (affects transistor drive current, Vt and leakage current)
High frequency roughness (may affect interconnect reliability but smoothed by dopant diffusion and requires additional study)
CD control
Increase in ADI (printed in resist) to ACI (after etch) CD bias proposed for 2005
Tool-to-tool matching requirements
Becoming very critical for mask and wafer CD metrology (see Microlithography World November 2004 and Leica presentation at SPIE BACUS September 2004)
Difficulty of achieving this might be noted with separate values for repeatability and matching - Mark those nodes in RED
Incorporating CD measurements into APC, scatterometry
EUV tool components metrology

9. Ask about contact/via
E-beam measurements of CD might not be accurate
If electrical properties are OK then is it true that CD area measurement is not important?

10. FEP Metrology Questions
FINFET Metrology needs?
Doping
corner rounding makes FIN fully depleted with thicker FIN
Gate Dielectric Thickness
Timing schedule is ?? 2005
FIB cross-section accuracy issues.
Particles on 450 mm wafer
1mm edge exclusion
Local Strain
High k Gate stack (EOT, k, thickness)
SOI/BOX
Gate workfunction

11. FI questions Guidelines for IM Data Standardization
Metrology needs to make sure that all data is time-stamped and marked properly