1. DRAFT - NOT FOR PUBLICATION 16 July 2003 – ITRS Public Conference Lithography Update ITRS Meeting San Francisco, CA July 14 - 16

2. DRAFT - NOT FOR PUBLICATION 16 July 2003 – ITRS Public Conference Potential Solutions ML2 = Maskless Lithography EUV = Extreme Ultra Violet PEL = Proximity Electron Lithography EPL = Electron Projection Lithography RET = Resolution Enhancement Technology

3. DRAFT - NOT FOR PUBLICATION 16 July 2003 – ITRS Public Conference Key changes. X-ray and ion projection lithography removed. Immersion lithography added. Imprint lithography has been added. Potential Solutions

4. DRAFT - NOT FOR PUBLICATION 16 July 2003 – ITRS Public Conference Major Changes to ITRS Lithography Tables Lithography requirements. New roadmap node definitions incorporated. MPU CD control studied through simulations. ± 10% control retained. Enabled by larger CDs in resist and more trim etch. Optical masks. Changes for living in an optical-proximity corrected world. CD control capability re-colored. 5X reduction eliminated. NGL masks. Items for further study have been identified.

5. DRAFT - NOT FOR PUBLICATION 16 July 2003 – ITRS Public Conference Major Changes to ITRS Lithography Tables Need lithography-friendly designs. Near-term for optical lithography. EPL. Any solution for 22 nm and 16 nm nodes. Red items in 2004. MPU CD control Mask CD control for contacts Large MEF with binary masks. Defects in resist Primarily a measurement issue.

6. DRAFT - NOT FOR PUBLICATION 16 July 2003 – ITRS Public Conference Lithography Requirements

7. DRAFT - NOT FOR PUBLICATION 16 July 2003 – ITRS Public Conference Difficult Challenges - Short Term

8. DRAFT - NOT FOR PUBLICATION 16 July 2003 – ITRS Public Conference Difficult Challenges - Long Term