1. 2006/7 ITRS Instructions and Templates for FEP TWG Inputs on 2007 Emerging Research Materials Requirements October 23, 2006 Michael Garner – Intel mike.c.garner@intel.com Daniel Herr – SRC herr@src.org

2. Possible Organization of the Chapter [60 lines or 1-1½ pages] Description of technologies covered (1/2 page/20 lines) Relationship to applications such as device, circuit, interconnect, package, lithography applications or integration needs (2 sentences/ 8 lines) Maturity of technologies in terms of devices, circuits, interconnects, or packages conceived and measured (3 sentences/10 lines) Challenges for the technologies including sensitivity to operating conditions such as temperature, electric field, mechanical stress (in the case of EHS the manufacturing and integration challenges – both short term and long term) – (3 sentences/10lines)) List of at least 3 key publications for each major technology discussed (6 lines)

3. FEP TWG: Nanoparticle Requirements Materials and Techniques:Nanowire Device Nanotube Device Nanodot Device Operating mechanism Material system Synthesis Critical Material Property Materials Challenges: Designed Property Control Interface Compatibility Fabrication Operation State-of-Technology(-/0/+) References

4. FEP TWG: Macromolecule Requirements Materials and Techniques:Novel Material Cleaning Passivation Chemistry Nanotube or Nanowire Device Doping Operating mechanism Material system Synthesis Critical Material Property Materials Challenges: Designed Property Control Interface Compatibility Fabrication Operation State-of-Technology(-/0/+) References

5. FEP TWG: Metrology and Modeling Requirements Materials and Techniques:Application #1Application #2Application #3Application #4 Operating mechanism Material system Synthesis Critical Material Property Materials Challenges: Designed Property Control Interface Compatibility Fabrication Operation State-of-Technology(-/0/+) References

6. FEP TWG: Directed Self-Assembly Requirements Materials and Techniques:DSA for Litho extension DSA to assemble nanoparticles for devices DSA to assemble nanodot devices DSA for self aligned deposition of materials or passivation Operating mechanism Material system Synthesis Critical Material Property Materials Challenges: Designed Property Control Interface Compatibility Fabrication Operation State-of-Technology(-/0/+) References

7. FEP TWG: Dielectrics and Multiferroics Requirements Materials and Techniques:Device Applications Memory Elements Operating mechanism Material system Synthesis Critical Material Property Materials Challenges: Designed Property Control Interface Compatibility Fabrication Operation State-of-Technology(-/0/+) References

8. FEP TWG: Heterostructures and Interface Requirements Materials and Techniques:Device Applications Device Isolation Contact Formation Operating mechanism Material system Synthesis Critical Material Property Materials Challenges: Designed Property Control Interface Compatibility Fabrication Operation State-of-Technology(-/0/+) References

9. FEP TWG: Spin Materials Requirements Materials and Techniques:Device Applications Operating mechanism Material system Synthesis Critical Material Property Materials Challenges: Designed Property Control Interface Compatibility Fabrication Operation State-of-Technology(-/0/+) References

10. FEP TWG: Other Requirements Materials and Techniques:Application #1Application #2Application #3Application #4 Operating mechanism Material system Synthesis Critical Material Property Materials Challenges: Designed Property Control Interface Compatibility Fabrication Operation State-of-Technology(-/0/+) References

11. Requested FEP TWG Actions Summarize initial FEP related emerging research materials requirements on the attached templates. As these materials requirements are application driven, please define a set of research materials requirements for each application that warrants consideration. Draft a brief textual summary, i.e. one paragraph, as warranted. Forward your initial set of inputs to Dan Herr, at herr@src.org, by Tuesday, November 28, 2007. herr@src.org Your inputs will serve as the basis for follow-up ERM discussions at the December 4 th ITRS meeting in Taiwan.

12. Thank You For Your Assistance