1. Wireless RF and Analog/Mixed-Signal IC Technology Roadmap
PIDS
Wireless RF and Analog/Mixed-Signal IC
Technology Roadmap
RF and Analog/Mixed-Signal Technologies
for Wireless Communications
Working Group
ITRS Public Conference Dec. 2, 2003
Hsinchu, Taiwan nr

2. Objectives Use wireless IC as new system / technology driver for ITRS
First time to have a dedicated section (in PDIS chapter) on AMS and RF technologies in ITRS
First time to include III-V compound semiconductors in ITRS
Address intersection of Si-based technologies with III-V compound semiconductors and other potential technologies (MEMS, BAW, Passives, ..)
Present technical challenges and requirements for AMS & RF IC technologies in wireless applications for cellular phones, WLAN/WPAN, automotive radar, and phased array RF systems, frequencies GHz nr

3. Digital Signal Processor
Scope of Work
Circuit functions of a typical mobile communication system GHz AA
LNA
AGC
ADC
filter
VCO
AMS
RF Transceiver
reference
I,V,f
clock
tree N f
Digital Signal Processor
ref
analog signal
processor PA
DAC
PA&PM
power
control logic
regulators nr

4. Analog/Mixed-Signal & RF Roadmap Evolution
PIDS 2001
Memory & Logic
Analog/Mixed-Signal
Reliability
Emerging Research Devices
PIDS 2003
RF & AMS IC Technologies for
Wireless Communications:
0.8-10GHz
Analog & Mixed Signal
RF Transceivers
PAs & Power Management
10-100GHz
mm-Wave nr

5. Accomplishments
Formed a dedicated Working Group with representives from both industry and academia
Developed work scope, WG organization, and schedule
Completed development of technology requirement / tables
Completed development of potential solutions / tables
Completed the RF/AMS section in PIDS chapter
Developing multi-year strategy nr

6. Organization 24 members (20 US, 4 Europe)
Chair: Margaret Huang, Motorola
Co-Chairs: Bin Zhao, Skyworks
Jan-Erik Mueller, Infineon
Editorial: Herbert Bennett, NIST
Sub-Group (1): PAs & Power Management
Julio Costa, RFMD (L)
Chuck Weitzel, Motorola (L)
Ding Day, Skyworks
Ali Hajimiri, Caltech
Dave Halchin, RFMD
Rik Jos, Philips nr

7. Organization Sub-Group (2): RF Transceivers Marco Racanelli, Jazz (L)
Peter Cottrell, IBM
Ali Niknejad, UC Berkeley
Sam Shichijo, TI
Sub-Group (3): Analog & Mixed Signal
Ralf Brederlow, Infineon (L)
Margaret Huang, Motorola
Bin Zhao, Skyworks
Sub-Group (4): Millimeter Wave (10-100GHz)
Tony Immorlica, BAE Systems (L)
Roger Van Art, Jazz
Ronald Grundbacher, Northrop Grumman
Tom Kazior, Raytheon
Minh Le, Vitesse
Michael Schlechtweg, Fraunhofer Institute
Jeff Shealy, RFMD
John Zolper, DARPA nr

8. Application Spectrum GSM CDMA ISM PDC GPS SAT Radio DCS PCS DECT CDMA
WLAN
802.11b/g
HomeRF
Bluetooth TV
802.11a
SAT TV
Hyperlink
UWB
LMDS
AUTO
RADAR
Contraband
Detection
All Weather
Landing
94 GHz
77 GHz
28 GHz
10 GHz
5 GHz
2 GHz
0.8 GHz
InP Si
SiGe
GaAs nr

9. Working Strategy Methodology:
(1) Communication protocols/standards – governing requirements
(2) Circuits: performance figure of merit – trends/requirements
(3) Devices: performance trend – solutions/challenges
Divided into 2 frequecy bands
(1) GHz (AMS, RF Transc, PA&PM)
(2) GHz (mm-Wave)
Generates roadmap tables in each of the 4 areas:
requirements, difficult challenges, potential solutions
Tables cover technologies
Si CMOS, SiGe HBT, Si LDMOS, GaAs, InP, SiC, GaN
and device structures
MOSFET, MESFET, HEMT, HBT, LDMOS, on-chip passives
Outcome: RF & AMS IC technology roadmap nr

10. Sub-Group: Analog/Mixed-Signal
Based on a split from the AMS Table in ITRS-2001
Relatively low frequency devices – AMS applications
Analog MOS device scaling with relatively high V
nMOS (speed); nMOS (precision)
On-chip capacitors & resistors
Bipolar for analog functions
Precision and matching performance
1/f noise, cap nonlinearity, leakage nr

11. Sub-Group: RF Transceivers
Based on a split from the AMS Table in ITRS-2001
Focus on GHz frequency range
Device applications: LNA, freq synthesis/logic; VCO; drivers/amp; filters/RF bypass; integration
Bipolar (NPN); RF-MOS (NMOS); inductors, varactors; cap & res for RF; isolation
Max ft, fmax, noise figure, trade-off between power / noise / linearity / etc. nr

12. Sub-Group: PAs & Power Management
New for ITRS-2003
Focus on 0.8 – 10 GHz
PAs for terminals: relatively high voltage and high breakdown device (typically >10V) – III-V HBT, PHEMT, Si MOSFET, SiGe HBT
Basestation PAs: high operating voltage (>10V–50V) devices – Si LDMOS, GaAs FET, SiC FET, GaN FET)
Key driving force: integration & cost nr

13. Sub-Group: PAs & Power Management
Base Station Devices Technology nr

14. Sub-Group: mm-Wave New for ITRS-2003
Focus on 10 – 100 GHz Applications
Dominated by compound semiconductors: GaAs, InP, GaN + SiGe
Devices: MESFET, PHEMT, HEMT, MHEMT, HBT
Performance: low noise, power, linearity, ultra-high speed digital
Table: a variety of combinations of materials, device types, and for different performance / applications nr

15. Key Considerations Drivers for Wireless Communications
Cost (die size, part count)
Power consumption
Functionality
Device operating frequencies, channel bandwidth, transmit power, etc. – determined by wireless communication standards and protocols
Non-traditional ITRS roadmap parameters
Regulations from governments determine system spectrum
Standards and protocols drive frequencies and performance
Cost / Performance drives integration
Signal Isolation (technology, circuit/system, EDA)
Analog shrink (power supply, area, novel device structures)
Filters and T/R switches integration (MEMS)
Multi-band Multi-mode applications SOC vs. SIP / RF modules nr

16. Difficult Challenges Signal isolation
Optimizing analog/RF CMOS devices with scaled technologies: mismatch, 1/f noise, and leakage with high-k gate dielectrics
High density integrated passive element scaling and use of new materials: Q-factor value for inductors; matching and linearity for capacitors
Reduced power supply voltages: degradation in SNR and signal distortion performance
Reduced device breakdown voltage in scaled technologies
High frequency devices with increased operating voltage for base station applications
Compound semiconductor substrates with good thermal dissipation and process equipment for fabrication at low cost
Difficulty and cost of integrating various analog/RF and digital functions on a chip or in a module nr

17. Key Cross-TWG Issues Assembly & Packaging Emerging Research Devices
RF module/SIP drives need for Chip & Package co-design
Emerging Research Devices
Analog functions and performance with novel device structures
Front End Processes / Interconnect
Low inductance ground connection
Suppressing electrical interference / cross talk / signal isolation
High Q inductors
Substrate (low/high resistivity)
Modeling and Simulation
Modeling for SOC (device/circuit/system)
Accurate, fast and predictive Analog/RF compact models
Computationally efficient physical models for carrier transport
Design/Test
Design for reduced RF device/circuits characterization & test
Co-design flow of RF, analog and digital circuits
RF/analog/digital test for SoC system nr

18. Summary
2003 ITRS significantly expanded in RF & AMS IC Technologies for Wireless Communications
new system / technology driver for ITRS
includes compound semiconductor devices
AMS/RF requirements, difficult challenges, potential solutions
Cost is a major driver moving more wireless applications to SiGe and (eventually) to CMOS
Multi-year strategy to engage Design, Modeling, FEP, Interconnect, Test, Assembly & Packaging, ERD, ESH, etc.
Enhance WG memberships – increase geographical participation and representation (especially in Asia/Europe) nr