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2012 ITRS Emerging Research Materials [ERM] December 5, 2012

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Presentation on theme: "2012 ITRS Emerging Research Materials [ERM] December 5, 2012"— Presentation transcript:

1 2012 ITRS Emerging Research Materials [ERM] December 5, 2012
C. Michael Garner, GNS/Stanford Hiro Akinaga, AIST Dan Herr, UNCG

2 2012 ERM Participants Hiro Akinaga AIST Tsuneya Ando Tokyo Inst. Tech
Nobuo Aoi Panasonic Bernd Appelt ASE Koyu Asai Renesas Yuji Awano Keio Univ Daniel-Camille Bensahel ST Micro Kirill Bolotin Vanderbilt Univ. Bill Bottoms Nanonexus George Bourianoff Intel Bernard Capraro Intel Arantxa Maestre-Caro Intel John Carruthers Port. State Univ. An Chen Global Foundry Zhihong Chen IBM Joy Cheng IBM Byung Jin Cho KAIST Luigi Colombo TI Geraud Dubois IBM Catherine Dubourdieu Inst. Nanotech. de Lyon Nathan Fritz Intel . Michael Garner GNS/ Stanford Michael Goldstein Intel Wilfried Haensch IBM Dan Herr UNCG/JSNN ChiaHua Ho NDL Jim Hutchby SRC Berry Jonker NRL Ted Kamins Stanford U. Leo Kenny Intel Choong-Un Kim UT Arlington Sean King Intel Atsuhiro Kinoshita Toshiba Paul Kohl Ga Tech Blanka Magyari-Kope Stanford U. Ming-Hsiu (Eric) Lee Macronix Yao-Jen Lee NDL Liew Yun Fook A-Star Timothy E. Long VA Tech Prashant Majhi Intel Francois Martin LETI Fumihiro Matsukura Tohoku U. Nobuyuki Matsuzawa Sony Jennifer Mckenna Intel Yoshiyuki Miyamoto AIST Kei Noda Kyoto University Yaw Obeng NIST Chris Ober Cornell Univ Matsuto Ogawa Kobe University Katsumi Ohmori. TOK Yutaka Ohno Nagoya University Tomas Palacios MIT Samuel Pan TSMC Er-Xaun Ping AMAT Joel Plawsky RPI Dave Roberts Nantero Tadashi Sakai Toshiba Gurtej Sandhu Micron Hideyki Sasaki Toshiba Nanoanalysis Shintaro Sato AIST Akihito Sawa AIST Barry Schechtman INSEC Sadasivan Shankar Intel Matt Shaw Intel Takahiro Shinada AIST Michelle Simmons UNSW Kaushal Singh AMAT . Satofumi Souma Koube Univ Naoyuki Sugiyama Toray Shin-ichi Takagi U. of Tokyo Masahiro Takemura NIMS Koki Tamura TOK America Yoshihiro Todokoro NAIST Yasuhide Tomioka AIST Luan Tran TSMC Peter Trefonas Dow Ming-Jin Tsai ITRI Wilman Tsai Intel Emanuel Tutuc UT Austin Ken Uchida Keio Univ. Kang Wang UCLA H.S. Philip Wong Stanford U. Dirk Wouters IMEC Wen-Li Wu NIST Shigeru Yamada Ibiden Hiroshi Yamaguchi NTT Toru Yamaguchi NTT Fu-Liang Yang NDL Hiroaki Yoda Toshiba Victor Zhirnov SRC Paul Zimmerman Intel Ehrenfried Zschech Fraunhofer Inst.

3 2012 Key Messages 2011 ERM Chapter will not be updated in 2012
ERM is preparing for 2013 ITRS Rewrite Aligning with iTWG New Requirements Planning e-Workshops Identifying potential material transitions Identifying support capabilities needed Significant Challenges for all Materials

4 Memory Materials Ferroelectric Memory Nanoelectromechanical (NEMM)
Redox RAM Mott Memory Macromolecular Molecular

5 Extending CMOS Logic Alternate Channel Materials
-n-Ge & p-III-V -Nanowires -Graphene -Carbon Nanotubes Assess Materials Performance Gate materials Contacts Interfaces III-V Heterostructures (L. Samuelson, Lund Univ.) A. Geim, Manchester U. -Identify Novel Metrology & Modeling Needs D. Zhou, USC

6 Beyond CMOS Logic Materials & Interfaces
Charge Based States Other Than Charge Only Ferroelectric Polarization Spin State Individual or Collective Negative Capacitance FET Assess Ferromagnetic Materials, Dilute Magnetic Semiconductors Complex Metal Oxides Strongly Correlated Electron State Materials (FE, FM, FE & FM) Molecules Interfaces

7 ERM Device Material e-Workshops
Redox RAM Materials Deterministic and Conformal Doping Nanoscale Contact Resistivity Carbon Electronics (Nanotubes and Graphene) Spin Materials & Out of Plane MTJ Materials Strongly Correlated Electron Materials Modeling of Complex Transition Metal Oxide Properties

8 Lithography Materials
LER Rectification Ruiz, et. al. Science, 2008 Contact/Via Rectification Density Multiplication Stoykovich, et. al. Macromolecules, 2010 Continuing evaluation of novel resist for 193i and EUV LER Rectification to reduce LER and improve line CD control Contact/Via Rectification to reduce size and improve CD control Pattern Density Multiplication for high density smaller features

9 Survey on DSA Contact rectification and pattern density multiplication had the highest support Most industry responders had plans to evaluate DSA

10 Interconnect Materials
Interconnects Ultra-thin Barrier Layers (sub 2nm) NH2 terminated Self Assembled Monolayers (SAM) Graphene Via Wire Ultra low κ ILD Integration must be a significant focus Novel Interconnects & Vias Graphene, Carbon Nanotubes, Nanocomposites Workshops Ultralow k ILD: Completed Ultrathin Cu Barrier Layers: Completed

11 Assembly & Package e-Workshops
Residue Free Adhesives Insulating polymers with high in plane thermal conductivity [3-5 W/m-K] Electrically conductive flexible adhesive contact material for heterogeneous integration <200C process temperature photopatternable dielectric interposer Nanosolders with high electrical and thermal conductivity Novel EMI shielding materials (graphene, CNT, etc.)

12 Hexagon of Assembly Material Requirements
Examples Thermal Interface Mat. Mold Compound Underfill Adhesives Epoxy Functional Properties Moisture Resistance Adhesion Fracture Toughness Modulus CTE CTE depends on volume fraction Highly coupled Material Properties Apply novel materials to achieve optimal performance

13 ESH Challenges Materials needed to overcome significant technical challenges Low energy processes and new materials for low energy integrated circuits Few materials can meet requirements Some materials have known hazards or uncharacterized ESH properties Stimulate ESH research in uncharacterized materials Good risk management methods for materials ESH in Research, Development & Manufacturing Lifecycle Assessment & Management Efficient use of materials

14 Summary 2011 ERM Chapter will not be updated in 2012
ERM is preparing for 2013 ITRS Rewrite Aligning with iTWG New Requirements Planning e-Workshops Significant Challenges for all Materials

15 Back-up

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