1. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Modeling and Simulation ITWG Jürgen Lorenz - Fraunhofer-IISB ITWG/TWG Members H. Jaouen, STM * W. Molzer, Infineon * R. Woltjer, Philips * G. Le Carval, LETI J. Lorenz, Fraunhofer IISB * W. Schoenmaker, IMEC # * : supported by EC User Group UPPER+ # : now with MAGWEL T. Wada, SELETE S. Sato, Fujitsu Japanese TWG 16 industrial members C. Riccobene, AMD M. Giles, INTEL M. Orlowski, Motorola M. Meyyappan, NASA V. Bakshi, SEMATECH J. Wu, TI E. Hall, Arizona State Univ. J.-H. Choi, Hynix K.H. Lee, Samsung

2. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Key Messages (I) Update of key messages from 2001/2002 ITRS: Mission of Modeling and Simulation as cross-cut topic: Support areas covered by other (especially focus) ITWGs In-depth analysis of M&S needs of other ITWGs performed, based on documents + inter-ITWG discussions Modeling and simulation provides an embodiment of knowledge and understanding. It is a tool for technology/device development and optimization and also for training/education Technology modeling and simulation is one of a few enabling methodologies that can accelerate development times and reduce development costs: Assessment up to 35% in 2003 important not only in years of difficult economic conditions

3. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Key Messages (II) Art of modeling: - Combine different experiments & theory to extract physical mechanisms & parameters - Find appropriate trade-off between detailed physical simulation (CPU and memory costly) and simplified but physically appropriate approaches Accurate experimental characterization is essential Further growing importance of atomistic/hierarchical/multilevel simulation, materials - appropriate treatment of nanostructures Need for additional participation esp. from Korea and Taiwan

4. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan M&S 2003 Crosscuts Detailed analysis of other ITRS chapters + discussions with other ITWGs as basis for M&S challenges and requirements tables, and text Crosscuts with focal ITWGs and other cross-cut ITWG described in detail Links with ALL other ITWGs. Some examples: Design: Influence of process fluctuations, intrinsic statistics, noise, reliability,... on design Test: Extension of interconnect simulation towards simulation of test equipment PIDS: Long list including modeling of new materials and new device architectures, atomistic/quantum mechanical simulation, fluctuations and variations, coupled device/circuit/system simulation

5. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan M&S 2003 Crosscuts Some examples (cont.): FEP: Long list including modeling of material issues, new device architectures, ultra-shallow junctions and defect engineering, assessment of process variants Lithography: Push limits of optical lithography by optimization of options; assessment of Next Generation Lithography based on predictive physical models (e.g. efficient solution of Maxwell equations) Interconnects: Large range of M&S support needed, from prediction of material properties (e.g. resistivitiy of narrow Cu lines) to impact of non-idealized interconnects on IC layout Factory Int.:Support shrink of technology implemented in fab line, by equipment/process/device/circuit simulation. Assess impact of process variations on yield

6. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan M&S 2003 Crosscuts Some examples (cont.): Assembly and Packaging: Co-design issues: Chip and package, mechanical/electrical/thermal simulation ESH: Bi-directional link w.r.t characterization and models for gas composition and chemical reactions Yield Enhancement: Simulation influence of defects and of process fluctuations on devices/ICs/yield Metrology:M&S needs advanced metrology for development/ assessment of physical models. Physical modeling to support metrology e.g. w.r.t. linking measured spectra to gas composition, interpretation of measured data, extension of measurements from 2D to 3D

7. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Equipment related Equipment/Feature scale Modeling Lithography Modeling Feature scale Front End Process Modeling Device Modeling Interconnects and Integrated Passives Modeling IC-scale Circuit ElementsModeling Package Simulation Materials Modeling Numerical Methods Technology Modeling SCOPE & SCALES

8. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Short-Term Challenges: Major Changes Modeling hierarchy included Modeling of shallow junctions extended to Front-End Process Modeling for Nanometer Structures Ultimate nano-scale CMOS simulation capability pulled in from long- term, replacing & partly incorporating Gate-stack models for ultra-thin dielectrics (phenomenological models) Rest of Gate-stack models for ultra-thin dielectricsincorporated into new long-term challenge on predictive Modeling of processing and electrical properties of new materials 2002 long-term challenge Thermal-Mechanical-Electrical Modeling for interconnections and packaging pulled in from long-term (6 th short-term challenge) More precise phrasing & shift of emphasis / new aspects in other challenges

9. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Difficult Challenges > 45 nm Grand Challenge

10. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Needs Efficient extraction and simulation of full- chip interconnect delay Accurate and yet efficient 3D interconnect models, esp. for transmission lines and S- parameters High-frequency circuit models including –non-quasi-static effects –substrate noise –parasitic coupling Parameter extraction assisted by numerical electrical simulation instead of RF measurement Identified as one of the Grand Challenges ! Short-term Difficult Challenges High-Frequency Circuit Modeling for 5-40 Ghz Applications (From Philips)

11. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Short-Term Difficult Challenges Front-End Process Modeling for Nanometer Structures Needs Diffusion/activation/damage models and parameters incl. low thermal budget processes in Si-based substrate, e.g. Si, SiGe:C, (incl. strain), SOI and ultra-thin body devices Characterization tools for ultra- shallow geometries and dopant levels Modeling hierarchy from atomistic to continuum for dopants and defects in bulk and at interfaces Identified as one of the Grand Challenges ! Source: A. Claverie, CEMES/CNRS, Toulouse, France

12. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Short-Term Difficult Challenges Modeling of Equipment Influences on Features Generated in Deposition and Etching Processes Needs Fundamental physical data ( e.g. rate constants, cross sections, surface chemistry); reaction mechanisms and reduced models for complex chemistry Linked equipment/feature scale models CMP (full wafer and chip level, pattern dependent effects) MOCVD, PECVD and ALD modeling Multi-generation equipment/wafer models Simulated across- wafer variation of feature profile for a sputter-deposited barrier.

13. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Short-Term Difficult Challenges Lithography Simulation including NGL Needs Optical simulation of resolution enhancement techniques including mask optimization (OPC, PSM) Predictive resist models incl. line-edge roughness, etch resistance and mechanical stability Multi-generation lithography system models Printing of defect on phase-shift mask: bump defect (top) vs. etch defect (lower)

14. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Short-Term Difficult Challenges Ultimate Nanoscale CMOS Simulation Capability Pulled in from long-term! Needs Methods and algorithms that contribute to prediction of CMOS limits Quantum based simulators Models and analysis to enable design and evaluation of devices and architec- tures beyond traditional planar CMOS Phenomenological gate stack models for ultra-thin dielectrics Models for device impact of statistical fluctuations in structures and dopant distributions courtesy Infineon / TU Munich Quantum-mechanical vs. classical carrier densitiy in double-gate transistor drain source quantum classical courtesy Infineon / TU Munich

15. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Short-Term Difficult Challenges Thermal-Mechanical-Electrical Modeling for Interconnections and Packaging Pulled in from long-term! Needs Model thermal-mechanical and electronic properties of low-k, high-k and conductors and the impact of processing on these properties Model reliability of packages and interconnects, e.g. stress voiding, electromigration, piezoelectric effects; textures, fracture, adhesion Temperature distribution in an interconnect structure courtesy TU Vienna / IST project MULSIC

16. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Long-Term Challenges: Major Changes Extend beyond continuum tools shifted to short-term & integrated there into various challenges, esp. Front-End Process Simulation Instead: Modeling of processing and electrical properties of new materials Ultimate nanoscale CMOS simulation capability shifted to short-term, including parts of old gate stack modeling challenge Thermo-Mechanical-Electrical Modeling for Interconnections and Packaging shifted to short-term Software Module Integration skipped: Rather a requirement than a challenge Instead: Nano-Scale Modeling (e.g. nanotubes...) New challenge Optoelectronics modeling

17. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Difficult Challenges < 45 nm Grand Challenge

18. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Short-Term Requirement: Major Changes General: - Some items now in zebra colour - according to ITRS guidelines: Limitations of available solutions will not delay the start of production. In some cases, work-arounds will be initially employed. Subsequent improvement is expected to close any gaps for production performance in areas such as process control, yield, and productivity. This means for simulation: It can be used, but with more calibration, larger CPU time/memory, less generality then in the end required... ­Items adapted to 2 years passed since 2001 ITRS & changes in requirements/technical progress Lithography: - In exposure simulation no more emphasis on evaluation of wavelengths, but on capabilities of simulation incl. mask features and CPU efficiency

19. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan Short-Term Requirement: Major Changes Gate stack: Short-term focus on high-k Back-End Process/Equipment/Topography Modeling: - More clear structure, according to kinds of processes to be simulated Numerical device modeling: - Instead of bulk CMOS and non-bulk CMOS now Classical CMOS and Non-classical CMOS incl. channel-engineered devices Circuit element modeling/ECAD replaced by circuit component modeling& now structured into active devices and Interconnects and integrated passives Package modeling now structuring into electrical modeling and thermo-mechanical modeling instead of an item thermo-mechanical- electrical integrated models

20. 2 December 2003 – ITRS Public Conference Hsin Chu, Taiwan More details given in tables & ITRS text Thank you