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14 July 2010, ITRS Summer Meeting, San Francisco, CA 1DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 International Technology Roadmap for Semiconductors.

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Presentation on theme: "14 July 2010, ITRS Summer Meeting, San Francisco, CA 1DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 International Technology Roadmap for Semiconductors."— Presentation transcript:

1 14 July 2010, ITRS Summer Meeting, San Francisco, CA 1DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications Working Group ITRS Summer Meeting On behalf of the RF and AMS ITWG Jack Pekarik IBM Essex Junction, VT pekarik@us.ibm.com

2 14 July 2010, ITRS Summer Meeting, San Francisco, CA 2DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 Organization Chair:Jack Pekarik, IBM 41 Members in 2010 / 39 Members in 2009 Co-chairs:Jan-Erik Mueller, Infineon 25 NA, 8 EU, 8 AP Sebastian Liau, ITRI Margaret Huang, Freescale Editor:Herbert Bennett, NIST Subgroup CMOSSnezan Jenai, Infineon Subgroup BipolarPascal Chevalier, ST Subgroup PassivesSebastian Liau, ITRI Subgroup PAPeter Zampardi, Skywork Subgroup mm-WaveTony Immorlica, BAE Systems Subgroup MEMSDave Howard, Jazz

3 14 July 2010, ITRS Summer Meeting, San Francisco, CA 3DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 Membership * Inactive this year NameAffiliationNameAffiliation Pascal AnceySTMicroelectronicsYukihiro KiyotaSony Corporation, Herbert S. BennettNISTSebastian Shyi-Ching LiauIndustrial Technology Research Institute Volker BlaschkeJazz SemiconductorGinkou MaIndustrial Technology Research Institute Bobby BrarTeledyne Scientific and ImagingJan-Erik MuellerInfineon Technologies Wayne BurgerFreescale Semiconductor, IncTakashi NakamuraOmron Corp Pascal ChevalierSTMicroelectronicsHansu OHSamsung Electronics Co., Ltd. David ChowHRLDouglas Pattullo Julio CostaRFMDJack PekarikIBM Corporation Mattias DahlstromIBM CorporationJean-Olivier PlouchartIBM Corporation Stefaan DecoutereIMECEd PreislerJazz Semiconductor Jonathan HammondRFMDMarco RacanelliJazz Semiconductor Erwin HijzenNXP Semiconductors,Mark RoskerDARPA Digh HisamotoHitachi Ltd.,Bernard SautreuilSTMicroelectronics Dave HowardJazz SemiconductorTony StamperIBM Corporation W. Margaret HuangFreescale Semiconductor, IncSorin VoinigescuUniversity of Toronto Matthias IllingBoschDawn WangIBM Corporation Anthony A. Immorlica Jr.BAE Systems,Albert WangUniversity of California Jay JohnFreescale Semiconductor, IncDennis WilliamsWinSemi Alex KalnitskyTSMCPeter ZampardiSkyworks Solutions, Inc Mattan KamonCoventor, Inc.Herbert ZirathChalmers University Tom KaziorRaytheon RF Components

4 14 July 2010, ITRS Summer Meeting, San Francisco, CA 4DRAFT WORK IN PROGRESS --- DO NOT PUBLISH Wireless Working Group Key Considerations Traditional Roadmap Drivers: Cost (scaling, die size, part count) Power consumption Chip functionality Non-traditional Roadmap Drivers: Government regulations determining system spectrum and specifications Standards and protocols drive frequencies, power and performance RF module form factor (size and height requirements) Color coding Manufacturing solutions exist does not imply product volume shipment per ITRS definition Cost / Performance Drives Integration: Multi-band & multi-mode system applications drive MtM focus (MEMs, embedded passives, filters, switch integration) Signal isolation and integrity lead to needs for clear FoMs & metrology Analog shrink drives MtM design innovations but FoMs & metrology lag

5 14 July 2010, ITRS Summer Meeting, San Francisco, CA 5DRAFT WORK IN PROGRESS --- DO NOT PUBLISH Wireless ITWG Background Scope of work remains the same; wireless transceiver IC as technology driver, with active contribution to ITRS-defined More than Moore thrust. Chapter subdivided into <10GHz applications and mm-wave applications. 5 technology subgroups cover <10GHz applications: CMOS, bipolar, passives, power amplifier and MEMs. A mm-wave subgroup focuses on higher frequency applications, considering power and low-noise using III- V and silicon-based devices. Some portions of the roadmap reflect prototype capability more than volume production. Production requires applications (especially emerging mm-wave connectivity and imaging) that currently lag technology capability.

6 14 July 2010, ITRS Summer Meeting, San Francisco, CA 6DRAFT WORK IN PROGRESS --- DO NOT PUBLISH Scope of Wireless Chapter

7 14 July 2010, ITRS Summer Meeting, San Francisco, CA 7DRAFT WORK IN PROGRESS --- DO NOT PUBLISH GSM CDMA ISM PDC GPS SAT Radio DCS PCS DECT CDMA WLAN 802.11b/g HomeRF Bluetooth SAT TV WLAN 802.11a SAT TV WLAN Hyperlink UWB LMDS WLAN AUTO RADAR Contraband Detection All Weather Landing 94 GHz77 GHz28 GHz10 GHz5 GHz2 GHz0.8 GHz GSM CDMA ISM PDC GPS SAT Radio DCS PCS DECT CDMA WLAN 802.11b/g Bluetooth SAT TV Tuner WLAN 802.11a WiMAX SAT TV WLAN Hyperlink UWB LMDS WLAN AUTO RADAR All Weather Landing 0.094-1 THz77 GHz28 GHz10 GHz5 GHz2 GHz0.4 GHz Si–RF CMOSSi–RF CMOS SiC-MESFETSiC-MESFETGaN-HEMTGaN-HEMT SiGe–HBT, BiCMOSSiGe–HBT, BiCMOS GaAs-HBT, PHEMTGaAs-HBT, PHEMT InP–HBT, HEMT GaAs MEHMTInP– HBT, HEMT GaAs MHEMT ZigBee Imaging Spectroscopy 60GHz WPAN Wireless Communication Application Spectrum WCDMA

8 14 July 2010, ITRS Summer Meeting, San Francisco, CA 8DRAFT WORK IN PROGRESS --- DO NOT PUBLISH RF & AMS for Wireless plans CMOS: Revise data for matching & f MAX, to better-match published data, acknowledge that more companies offer more HV & analog devices. BIPOLAR: Revisit HS-PNP f T, BV CEO. PA: No changes required. Passives: No changes required. Many considerations for 2011. MEMs: No changes required. Investigating whether to spin-off MEMs into a new chapter for 2011 –Discussing with iNEMI and ITRS (Assy & Pkg, Design) mmWave: Consider delay of GaN & perhaps earlier retirement of some InP technologies; review timing of gate length reductions. General: Provide clear definitions of FOMs used and encourage publication of data using these methods. This years focus: Few changes for 2010, full-chapter revision for 2011


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