1. Light-Generated Current
ECE 2204

2. Excess Carriers
Are generated when light is absorbed by the semiconductor because the energy of a photon, if large enough, will break a bond between two atoms in the semiconductor and cause an electron and hole to be formed.
Examples of devices
Solar Cells
Photovoltaics and photoconductors (photodetectors)

3. IV Characteristics in the Dark
+ VD - ID

4. IV Characteristic in the Light

5. Solar Cell
Largest area rectangle that can be formed between the x and y axes and the diode’s IV characteristic in Quadrant IV.
The position of the Maximum Power Point depends on the amount of light absorbed by the solar cell and the temperature of the solar cell in addition to the semiconductor material used to fabricate the diode and the dopant concentrations in the p and n regions.