1. Fully TID-Hardened Gigabit Ethernet Transponder Based On A Proprietary Library of SCL Cells Presentation By: Jeb Binkley (jbinkley@adsantec.net) Vladimir Katzman Ph.D. (vkatzman@adsantec.net) MAPLD 9/01/09jbinkley@adsantec.netvkatzman@adsantec.net

2. Introduction Transponder requirements and specifications TID hardening approach Optimum circuit logic family selection Proprietary cell library development Test chip and its laboratory results Transponder block schematics, layouts, and simulation results Transponder test results Summary

3. Gigabit Ethernet Transponder Transponder Specifications 10-1 MUX with CMU and 1- 10 DMUX with CDR 1.25Gb/s CML serial interface 1.8V CMOS low-speed parallel interface Internal 2-bit FIFO block 3 loop-back test modes ≤ 250mW power consumption TID hardness up to 1.0Mrad Must utilize 90nm CMOS9SF process from IBM

4. TID Hardening Of FETs

5. Design of TID-Tolerant FETs Field-effect transistors (FETs) are susceptible to the effects of TID (well known) An effective RHBD technique is the utilization of annular transistors (no-edge gate structures) in combination with protection guard rings around all n/n+ regions featuring different electrical potentials [1]. Application of this technique requires the development of the corresponding transistor layout structures and extraction procedures in order to determine the correct parameters of the simulation models. No libraries of CMOS gates with annular transistors are currently available on the market today.

6. Annular FETs In Annular FETs: 1. Current density is limited by the number of contacts to the inner diffusion region. 2. Minimum gate width is limited by the smallest circle length and depends on the gate length.

7. Logic Family Selection

8. SCL vs. CMOS CMOS logic is a natural implementation of the Si-based CMOS technologies Single-ended architecture is utilized in most modern day IC products Down-scaling of gate lengths to 90nm and below makes it suitable for Gb/s circuit designs Short-channel devices suffer from increased sub-threshold currents and low breakdown voltages Single-ended circuitry includes switching noise and signal duty cycle distortion Significant increase of dynamic power consumption at higher speed SCL architecture is based on a differential current switch Overcomes switching noise and duty cycle distortion problems SCL circuits are less sensitive to sub-threshold currents DC current consumption that does not increase with signal frequency Limited transconductance of FETs minimizes the architectural advantage of SCL The driving capability of SCL logic gates is relatively low

9. Logic Family Selection SCL architecture selected CMOS power saving advantages negated due to the enlarged minimized sized transistor width allowed by the annular transistor technique (Slide 5) Common circuit structures simulated to select the optimum logic family Simple dividers, DFFs, and ring oscillators Divide-by-2CMOS VersionSCL Version Maximum Frequency 700MHz720MHz Power Consumption (@625MHz) 1.2V * 0.6mA = 0.72mW 1.6V * 0.5mA = 0.8mW Gate Count6121

10. Cell Library Development

11. SCL Library Design (Schematic) SCL cells with various tail current ratings that support operational frequencies from DC to over 10GHz Operate from a single power supply voltage of 1.6V±5% Includes bandgap reference stage and other referencing circuitry Examples of implemented standard gates include: Logic gates (AND, XOR, etc.) Buffers (current switches) Source followers Latches (RS-latch, D-latch) Mux 2-1 SCL to CMOS Reference CircuitryBuffer

12. SCL Library Design (Layout) SCL cell layouts follow ADSANTEC’s proven proprietary layout approach: Minimum distance between transistors in differential pairs & similar component orientation All resistors are constructed utilizing standard bars Each cell is placed inside a closed substrate contact ring to improve its radiation tolerance All cells can be placed next to each other in X direction with virtually no gap in between Vertical connections are in “M4” & “M5” will horizontal are in “M2” & “M3” Layers “M6”, “M1_2B”, and “M2_2B” are reserved for bulk reference plane, VCC, and VEE connections. All interconnections inside the cells are valid for 100000POH at 125  C and ±3 sigma process variation. Buffer Cell

13. Main Library Benefits Benefits of a gate-array design approach No-gap cell placement & similar structure of all cells minimizes area consumption Transistor mismatch minimization Resistor mismatch minimization Symmetry optimization Thermal environment optimization Current density optimization Parasitic optimization High simulation speed and accuracy Reduces schematic and layout design cycle Designs are created utilizing proven blocks

14. Test Chip

15. Test Chip Results *Annealed: 168 hours at 100°C TID Testing Results TID testing was conducted at Kirtland Air Force Base, Albuquerque, NM with support from Micro-RDC and AFRL All test structures exhibited no degradation in electrical behavior after radiation exposure No latch up or extra current consumption was observed

16. Transponder Blocks

17. Top Level Schematic

18. Main Blocks 10-1 MUX Two 5-1 parallel-serial registers connected to a MUX 2-1 Utilizes proprietary clocking scheme Charge pump PLL based differential CMU with ring VCO 1-10 DMUX One DMUX 1-2 followed by two 1-5 serial-parallel registers Proprietary dual loop CDR with LOL detection 2-bit FIFO Removes clock ambiguity between input and PLL clocks

19. Top Level Simulation Loop Back Test 3 MUX Output DMUX Input SerDes Output C/10 SignalsCurrent Consumption = 105mA

20. Ring VCO Layout SchematicKvco Curves

21. Laboratory Results Test Results for the 10:1/1:10 SerDes at 1.25GHz: Reference Clock Divided-by-10 Clock C/10 Jitter pk-pk = 25-30ps Excellent signal characteristics Demonstrated full functionality Passed TID testing up to 2Mrad

22. Summary A 1.25GHz 10-1 / 1-10 transponder was successfully designed, fabricated, and tested. IBM9SF CMOS technology Chip size 2.4mm by 2.4mm Power: 200mW Designed using proprietary library of TID hardened SCL cells TID hardness provided by a combination of annular FET layouts and guard rings Suitable for gigabit Ethernet application

23. Questions? Special thank you to the support provided by: AFRL (David Alexander) and MRDC (Keith Avery) “SerDes, LVDS IOs, and Core Frequency Synthesis PLL for Radiation- Hardened-by-Design Structured ASICs” Sub-Contract Number: 07001-SC-002 SBIR Contract Number: FA9453-06-C-0200 NASA GSFC (Glen Rakow) “Radiation-Tolerant, Space Wire and Gigabit Ethernet Compatible Optical Transponder” SBIR Contract Number: NNX07CA73P [1] David R. Alexander, David G. Mavis, Charles P. Brothers, and Joseph R. Chavez, “Design Issues for Radiation Tolerant Microcircuits in Space”, 1996 IEEE Nuclear and Space Radiation Effects Conference Short Course, 1996.