1. Dahee Kim (Ewha womans university) for MPC-EX collaboration TEST OF MINI-PAD SILICON SENSOR FOR PHENIX MPC-EX

2. Contents We report test results of prototype silicon sensors for PHENIX MPC-EX. We describe basic theory and suggest key tests for silicon sensor. Suggested and reported key tests are CV characteristics IV characteristics & Electric circuitry test

3. Basic theory Operation of PIN sensor. Electron-hole generation & depletion region.

4. Capacitance Relation to depletion thickness. 17.0pF Full depletion region is about 23.5pF

5. Simulation about CV characteristic

6. Capacitance (V) bias V 020406080100120140160180 ) - 2 ( F 2 1 / C 0 2000 4000 6000 8000 10000 18 10  -2 F V 19 = 5.09 x 10 2 A    2 Fu ll d ep let ion v ol tag e

7. Scaling with area on test pattern.

8. Current Shockley diode equation(Ideal case) Simplifying idealization (drift, diffusion, thermal recombination- generation). Not considered : Surface leakage current, high injection, defect etc. With high injection(large I ), at 300K

9. Forward bias current (V) bias V 0.20.40.6 I ( A ) -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 YS11 test pattern, Forward-bias characteristics T V V e 0 I=I T 2V V e 0 I=I Ideal region High injection region S e r i e s r e s i s t a n c e d o m i n a t e d

11. Reverse bias current(Leakage current) Source of leakage current Volume term Thermal recombination-generation leakage current Defect Surface leakage current Radiation(include light and cosmic ray etc..)

12. Guard ring structure PADs of Sensor Bonding PADs Bias Guardring Floating Guardring (3 layer structure) Edge Rounding

13. Effect of Bias Guard Ring YS04_L real sensor

14. Effect of Dicing Before dicing Floating Guard Ring YS09_L real sensor After dicing

15. Electric circuit test We measured resistance between neighboring channels. Small fraction of them had short. Current yield ~ 30%. Statistics suggest the short is between metal traces. Stringent metal etching process is expected to cure the problem. 30  1.5 cm 3 cm 1 234 Cut line 6 cm Electric short happens between neighboring channels. The short frequency is proportional to trace overlap.

16. Summary We measured full depletion voltage for 425μm wafer to be 35V which corresponds to resistivity ~15,000 Ωcm. No breakdown is observed until the reverse bias voltage of 250V. We observed low leakage current less than 1μA for the whole sensor of 6 x 6 cm. We identified a small number of shorts between neighboring channels and attribute the problem to close metal traces. We propose further etching process for metal layer and/or increased space between metal traces.