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F.R.PalomoDevice Simulation Meeting 1/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ New 3D Detectors.

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Presentation on theme: "F.R.PalomoDevice Simulation Meeting 1/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ New 3D Detectors."— Presentation transcript:

1 F.R.PalomoDevice Simulation Meeting 1/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ New 3D Detectors Simulations USe & CNM & IFCA New 3D Detectors Simulations USe & CNM & IFCA F.R. Palomo 1, S. Hidalgo 2, I. Vila 3, fpalomo@us.es salvador.hidalgo@csic.es ivan.vila@csic.es 1 Departamento Ingeniería Electrónica, Escuela Superior de Ingenieros Universidad de Sevilla, Spain 2 Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Barcelona, Spain 3 Instituto de Física de Cantabria, Santander, Spain

2 F.R.PalomoDevice Simulation Meeting 2/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ Outline Resume and consolidation of 2015 first six months: 3D devices I-V and MIP simulations Pennicard Irradiation model and CMS irradiation model (but no convergence yet beyond 2e15 n/cm2) I-V, MIP & C-V Simulations, Irradiated (2e15 n/cm 2, Pennicard model)

3 F.R.PalomoDevice Simulation Meeting 3/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ 3D DESIGN CROSS SECTIONAL VIEW 3D Detectors, new designs from CNM-IMB Evolved from the FE-I4 3D Detector design 2 side columns, 10  m diameter 230  m thickness wafer (4 inch process) p-stop collar around n+ columns n+, max 1E19 cm -3 p+, max 1E19 cm -3 p-stop, max 8E16 cm -3

4 F.R.PalomoDevice Simulation Meeting 4/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ 3D New Designs ROC4sens 50x50  m 2 cell 5  m width p-stop collar, 22  m internal diameter 200  m column length 3D PSI46 2E 75x100  m 2 cell 5  m width p-stop collar, 17.5  m internal diameter 200  m column length 3D FERMILAB RD ROCS 2E 30x50  m 2 cell 5  m width p-stop collar, 12  m internal diameter 200  m column length 75um 100um 30um 50um ROC4sens PSI46 2E FERMILAB RD ROCS 2E

5 F.R.PalomoDevice Simulation Meeting 5/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ 3D ROC4sens TCAD MODEL 175801 Edges Finite Elements Structures defined by doping refinements

6 F.R.PalomoDevice Simulation Meeting 6/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ 3D PSI46 2E TCAD MODEL 294107 Edges Finite Elements Structures defined by doping refinements

7 F.R.PalomoDevice Simulation Meeting 7/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ 153559 Edges Finite Elements Structures defined by doping refinements 3D FERMILAB RD ROCS 2E TCAD MODEL

8 F.R.PalomoDevice Simulation Meeting 8/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ I-V SIMULATIONS Backplane Bias [0, -180 V]

9 F.R.PalomoDevice Simulation Meeting 9/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ MIP SIMULATIONS DESIGN MIP 1.244 KeV-cm 2 /mg (Si) #Heavy Ion MIP model HeavyIon( Direction=(0 0 1) Location = (27, 52, -0.8) Time=0.02e-9 Length=[0 0.001 230 230.01] wt_hi=[1.0 1.0 1.0 1.0] LET_f=[0 1.282e-5 1.282e-5 0] Gaussian Picocoulomb )

10 F.R.PalomoDevice Simulation Meeting 10/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ MIP SIMULATIONS, -30 V BIAS

11 F.R.PalomoDevice Simulation Meeting 11/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ MIP SIMULATIONS, -70 V BIAS

12 F.R.PalomoDevice Simulation Meeting 12/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ Perugia Model (Petasecca et al.) n-type silicon Perugia model p-type silicon Perugia model Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors, M.Petasecca et al. IEEE TNS 53(5), 2006 pp2971-2976 Numerical simulation of radiation damage effects in p-type silicon detectors, NIMA 563 (1), 2006, pp192-195 Good simulation of leakage currents for diodes (n+/p/p+ p-type silicon)

13 F.R.PalomoDevice Simulation Meeting 13/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ Pennicard Model (CNM-Glasgow) p-type silicon Perugia model p-type silicon Pennicard model (adapt from Perugia model) Simulations of radiation-damaged 3D detectors for the Super-LHC, D.Pennicard et al. NIMA 592(1-2), 2008, pp16-25 10 16 n eq /cm 2 Comparison between simulated and experimental CCE in a “3 column” ATLAS detector. Simulated “3 column” ATLAS detector Reason: Perugia free trapping not enough, correct leakage current (or effective dopping) so new  c,  h are defined.

14 F.R.PalomoDevice Simulation Meeting 14/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ I-V SIMULATIONS (258K) Backplane Bias, [0, -180 V] 2e15 n/cm 2 irradiation, Pennicard model (Convergence well understood) Non Irradiated Irradiated 2e15 n/cm 2 Pennicard Model 3 orders of magnitude I leak increase

15 F.R.PalomoDevice Simulation Meeting 15/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ C-V SIMULATIONS DESIGN System { # 3D Detector instance and voltage sources connections threeD detector (junction=cn backplane=cp) Vsource_pset vcn (cn 0) {dc=0} Vsource_pset vcp (cp 0) {dc=0} } # AC Analysis Quasistationary ( InitialStep=1e-3 MaxStep=0.005 MinStep=1e-6 Goal {Parameter=vcn.dc Voltage=+80}) { ACCoupled ( StartFrequency=1e6 EndFrequency=1e6 NumberOfPoints=1 Decade Iterations=100, notdamped=5 Node(cn cp) Exclude(vcn vcp) ) { Poisson Electron Hole } } 4 Simulations for each device, at 1e3, 1e4, 1e5 1e6 Hz AC signal

16 F.R.PalomoDevice Simulation Meeting 16/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ C-V Simulations ROC4sens (258K) Non Irradiated ~47.4 fF Irradiated 2e15 n/cm 2 Pennicard Model ~47.6 fF (1E6 Hz)

17 F.R.PalomoDevice Simulation Meeting 17/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ C-V Simulations PSI46 2E (258K) Irradiated 2e15 n/cm 2 Pennicard Model ~39.2 fF (1E6Hz) Non Irradiated ~36.7 fF

18 F.R.PalomoDevice Simulation Meeting 18/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ C-V Simulations FERMILAB RD ROCS 2E (258K) Non Irradiated ~49.0 fF Irradiated 2e15 n/cm 2 Pennicard Model ~49.3 fF (1E6 Hz)

19 F.R.PalomoDevice Simulation Meeting 19/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ MIP SIMULATIONS, -30 V BIAS, Irrad 2e15 n/cm 2 Irrad 2e15 n/cm 2 Pennicard

20 F.R.PalomoDevice Simulation Meeting 20/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ MIP SIMULATIONS, -70 V BIAS Irrad 2e15 n/cm 2 Irrad 2e15 n/cm 2 Pennicard

21 F.R.PalomoDevice Simulation Meeting 21/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ Our future simulations Working in radiation damage of 3D detectors with CMS trap models (2e15, 5e15, 1e16, 2e16 n/cm 2 ) Redefining and adapting mesh in models to ensure convergence beyond 2e15 n/cm 2, CMS model

22 F.R.PalomoDevice Simulation Meeting 22/22 CERN 7th July 2015 https://indico.cern.ch/event/407471/ https://indico.cern.ch/event/339943/ Thanks for your attention fpalomo@us.es salvador.hidalgo@csic.es ivan.vila@csic.es

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