1. Work in Progress --- Not for Publication 1 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting ITRS ERD/ERM ITWG Workshop Maturity Evaluation for Selected Emerging Research Memory Technologies Jim Hutchby and Mike Garner - Facilitating Casa Don Guanella – Sala Rossa Room Barza di Ispra (Varese Provence), Italy Tuesday, April 6, 2010 8:00 a.m. – 10:30 p.m.

2. Work in Progress --- Not for Publication 2 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Objectives  Workshop (For each of nine technologies) (April 6) –Receive expert inputs (pro & con) –Clarify status, potential, and remaining challenges –Formulate discussion/decision points to be considered in the Wednesday ERD/ERM meeting  ERD/ERM Working Group Meeting (April 7) –Discuss and reach approximate consensus on potential & challenges for each technology –Determine whether any of the nine candidate memory technologies is sufficiently promising and mature to benefit from accelerated development (Scale beyond the 16nm generation)

3. Work in Progress --- Not for Publication 3 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Information Workshop (For each of nine technologies) –Invitation to Wednesday’s ERD/ERM WG Meeting. –Questions today are for clarification – any debate is reserved for Wednesday’s meeting. –Please give me a copy of each proponent and friendly critic presentation today. –Discuss principal criteria to judge the potential for a candidate memory technology to highlight: Scalable to and beyond the 16nm generation Preserve or surpass the operating parameters of ultimately-scaled conventional technology being replaced

4. Work in Progress --- Not for Publication 4 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Information Requested (1/2)  Proposed device technology (device structure, data storage mechanism, materials issues, etc.) –Emerging Research Memory technologies that extend the functional scaling of nonvolatile memory technology beyond the 16nm generation –While preserving or bettering the performance parameters projected and potential cost for current nonvolatile memory technologies.  Scaling potential compared to appropriate ultimately scaled current NV RAM technology. –Geometric (size, density, etc.) –Scaling issues or difficulties

5. Work in Progress --- Not for Publication 5 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Information Requested (2/2)  Projected performance at maturity  Reduction to practice - status –Demonstration of “proof-of-concept” of device, unit cell and functional circuit –Fabrication technology – challenges –Progress in past four years –Projected Manufacturing Complexity vs. Current Technology  Current state-of-the-art using the provided metrics as a guide (Appendix 2 of request for white papers)  Key scientific and technological issues remaining to accept the technology for manufacture.  Technology roadmap outlining a 5-15 year develop path leading to manufacture in 5-10 years.

6. Work in Progress --- Not for Publication 6 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Evaluation Criteria (Must Have) (1/2)  Potential for scaling beyond the 16nm generation –What is the limit of scaling and limiting factor? –Are there intrinsic statistical fluctuations that could limit scaling*?  How well is the switching physics understood?  CMOS Compatibility? * Large statistical fluctuation in the density of “tokens” for the state –Example: 10 18 vacancies/cm -3 is ~0.25 vacancies in a cell of a 16nm technology with a 1nm thick active region

7. Work in Progress --- Not for Publication 7 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Evaluation Criteria (Important) (2/2)  Minimum number of mask layers or photolith steps to fabricate the device? (Cross bar is the minimum).  Means of fabricating a crossbar array and related circuits. –Potential for multiple bits per memory layer –Potential for 3D integration of multiple memory layers  How well are the materials and processes understood?  Operating voltage  Retention time of the state  Amount of energy to change the memory state  Ultimate time constant for changing the state  Number of memory cycles  Parasitic properties that may limit the technology (leakage current, capacitance, etc)  Low sensitivity to environmental performance degradation

8. Work in Progress --- Not for Publication 8 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting ERD/ERM Liaison Tasks  During the Proponent (Advocate) and Friendly Critic presentations on Tuesday –Take notes with particular attention to Pro’s and Con’s of the subject technology –Ensure the presentations address:  Benchmarking against appropriate Baseline technology (SRAM, NANDFLASH, NORFLASH, …) and/or Prototypical technology (MRAM, PCRAM, …)  Evaluation Criteria  alla

9. Work in Progress --- Not for Publication 9 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Example of Wkshop Deliverable for Each Technology Summary – NEMS Switch (July 12, 2008 Wkshop) Pros  Subthresh slope << 60 mV/dec  Substantial power reduction – lower V dd & little static power  Logic functions ~ 1 delay time  Complementary devices to replace n- and p-MOSFETS  NEM-FET dynamic V th device  Fab process comp w/ CMOS  Low cost substrates  Radiation hard operation Cons  Slow delay time < 1 ns  High oscillatory pull out time  High pull in voltage  Charge based switch w/ parasitics  NEM-FET is still a FET  NEM-FET not demonstrated  Limited scaling potential  Stiction issues  Controlled variability  Hermetic packaging required

10. Work in Progress --- Not for Publication 10 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Emerging Memory Technology Maturity Workshop Agenda – Tuesday, April 6 8:00Welcome and Introductions Hutchby 8:10Background, Workshop & Meeting Objectives Hutchby 8:20Ferroelectric FET Memory  Proponent Presentation (30 minutes) Takeuchi  Friendly Critic Presentation (20 minutes)Baldi  Discussion for clarification(10 minutes) 9:20Spin Transfer Torque RAM  Proponent Presentation (30 minutes) Endoh  Friendly Critic Presentation (20 minutes)Tran  Discussion for Clarification(10 minutes) 10:20Break 10:40Nanothermal: NW – PCM  Proponent Presentation (30 minutes) Rajendran  Friendly Critic Presentation (20 minutes)Tran  Discussion for Clarification(10 minutes) 11:40Lunch

11. Work in Progress --- Not for Publication 11 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Emerging Memory Technology Maturity Workshop Agenda – Tuesday, April 6 (Cont’d) 11:40Lunch 12:40Nanothermal: Fuse/Antifuse  Proponent Presentation (30 minutes) Akinaga  Friendly Critic Presentation (20 minutes)Liu  Discussion for Clarification(10 minutes) 1:40Nanoionic Memory  Proponent Presentation (30 minutes) Waser  Friendly Critic Presentation (20 minutes)Liu  Discussion for Clarification(10 minutes 2:40Nanomechanical Memory  Proponent Presentation (30 minutes) Ionescu  Friendly Critic Presentation (20 minutes)Fazio  Discussion for Clarification(10 minutes) 3:40Break 4:00Electric Effects Memory  Proponent Presentation (30 minutes) Chen  Friendly Critic Presentation (20 minutes) Zhirnov  Discussion for Clarification(10 minutes)

12. Work in Progress --- Not for Publication 12 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Emerging Memory Technology Maturity Workshop Agenda – Tuesday, April 6 (Cont’d) 5:00Macromolecular Memory  Proponent Presentation (30 minutes) Meskers  Friendly Critic Presentation (20 minutes)Park  Discussion for Clarification(10 minutes) 6:00Molecular Memory  Proponent Presentation (30 minutes) de Salvo  Friendly Critic Presentation (20 minutes)Kelly  Discussion for Clarification(10 minutes) 7:00Adjourn for Dinner 8:15 ERD/ERM Study Group Meeting to Discuss & Clarify Pros & Cons of each candidate technology 10:30 Adjourn

13. Work in Progress --- Not for Publication 13 ERD/ERM WG 4/6-7/2010 Barza, ITALY Workshop & FxF Meeting Emerging Memory Technology Maturity Workshop Agenda – Tuesday, April 6 (Cont’d) 8:15 p.m. to 10:30 p.m. 8:15Ferroelectric FET MemoryWaser 8:30Spin Transfer Torque RAMChung 8:45Nanothermal: NW – PCMChen 9:00Nanothermal: Fuse/Antifuse MemoryZhirnov 9:15Nanoionic MemoryAkinaga 9:30Nanomechanical MemoryZhirnov 9:45Electronic Effects MemoryZhirnov 10:00Macromolecular (polymer) Memory Garner 10:15Molecular MemoryGarner 10:30 Adjourn