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Electrons, phonons, and photons in solids Optoelectronics Group Alex L Ivanov Department of Physics and Astronomy, Cardiff University Wales, United Kingdom
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Outline A few words about Cardiff University Quantum mechanics: atoms and electrons Crystals and atomic lattices Phonons and electrons in a crystal Nanostructures and nanotechnology Semiconductor lasers
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Cardiff United Kingdom Cardiff University: 1) Established by Royal Charter in 1883. 2) Placed 7 th in a ranking of 106 UK Universities.
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Cardiff University
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Quantum mechanics of atoms Planck constant = 1.054 10 g cm /s. -272 Length scale: a 0.5nm (Bohr radius) B Energy scale: I /(m a ) (Rydberg) 2 2 0B Particle-wave duality: de Broglie wavelength = 2 /p should be compared with a relevant length scale. One cannot describe the optical and electrical properties of solids without applying quantum mechanics. (Fig. by P Christian, 2000)
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Bohr model H (Hydrogen) Be (Beryllium) 1) Electrons in an atom can occupy only discrete energy states, 2) By absorbing/emitting a photon an electron can “jump” between the energy states, 3) Proton (neutron) mass M is much larger than m: m : M = 1 : 1840. 0 (Figs. by Teachers Slide Show)
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Crystal Lattices K Hermann et al., Gallery of BALSAC 1cm contains about 10 atoms 323
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Phonons in crystals Rayleigh (surface) phonons Transverse (bulk) phonons (amplitude is magnified by factor 10) K Hermann et al., Gallery of BALSAC
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Phonons as quantum (quasi-) particles 1) Phonons are quantized vibrations of lattice atoms: Momentum is Energy is 2) The number of phonons depends on temperature: Heat is mainly due to phonons. 3) Phonons can easily interact with electrons: Resistivity R in metals ; Zero resistivity in superconductors. 4) Some of phonons can resonantly interact with light.
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Generation of phonons by a laser pulse The heat pulses (phonons of about 600GHz frequency) induced in a crystal film at T = 2K by a high-intensity laser (light) pulse. M Hauser and J Wolfe (University of Illinois)
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In-plane heat propagation (the movie by M Hauser and J Wolfe, University of Illinois)
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Electrons in solids Some of electrons move nearly free in the atomic lattice: “An electron sea”. Teachers Slide Show
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Motion of electrons in a crystal (the movie by K Drews, 2001)
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Electrons in solids Electron density distribution in Cr (Resolution – 0.5 nm). In metals the electrons are more uniformly spread off than those in semiconductors. Si Al GaAs Ag Figures by A Fox, HVEM, Laurence Berkeley Laboratory E Kaxiras, Harward University M Blaber, 1996
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Electrons in a crystal lattice electrons Brillouin-Bloch electrons, i.e., electrons “dressed” by an atomic lattice: mm 0eff Fig. by T Hromadka, 1997
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Electron-phonon interaction Electron-phonon interaction causes a) Resistivity in metals and semiconductors, b) Superconductivity in some solids at low temperatures. Fig. by P Moriarty, University of Nottingham
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Quantum Wells InGaAs/GaAs multiple quantum well (Fig. by M Patra, Helsinky University) (Figs. by J F Zheng et al., Lawrence Berkeley Labs) The electron de Broglie wavelength is comparable with the quantum well width a two-dimensional electron motion.
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Quantum Dots InGaAs (self-assembled) quantum dots on a GaAs substrate. Self-organized SiGe quantum dots grown on Si. (Figs. by Matlab-Kjist) (Fig. by J A Floro, 1997) (Fig. by P Moriaty, University of Nottingham)
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Quantum Dots Figs by M.C. Roco, Nanotechnology Initiative Figs by L Kouwenhoven
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Quantum wires Cross-section (about 5nm) of the Si quantum wire. InAs/InP self-assembled quantum wires. (Fig. by S Greiner at al., ESRF) (Fig. by J Kedzierski and J Bokor, DARPA)
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Cr 3+ (Ruby) Nd 3+ (frequency doubled) 532nm1064nm694nm In x Ga 1-x N 360-580nm In x Ga 1-x As 850-1300nm In x Ga 1-x P 600-700nm Lasers (Light Amplification by Stimulated Emission of Radiation)
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Vertical-Cavity Surface-Emitting Laser (VCSEL) Distributed Bragg Reflectors GaAs Multiple Quantum Well Light (Fig by G Vander-Rhodes et al, Boston University)
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Vertical-Cavity Surface-Emitting Lasers (Fig. by Huw Summers, Cardiff University) (Figs by C-K Kim, KAIST) m
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GaN-based Blue Lasers GaN lasers were developed in Japan by S. Nakamura. (Fig. by Osram Opto Semiconductors) (Fig. by Nitride Semiconductor Research)
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