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15_01fig_PChem.jpg Particle in a Box
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Recall 15_01fig_PChem.jpg Particle in a Box
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15_01fig_PChem.jpg Particle in a Box Initial conditions Recall
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15_02fig_PChem.jpg Wavefunctions for the Particle in a Box Normalization Recall Therefore a
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Recall 15_02fig_PChem.jpg Wavefunctions are Orthonormal + - + Even Odd + - + Even Odd + - + -
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15_02fig_PChem.jpg Wavefunctions are Orthonormal AND
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15_03fig_PChem.jpg Orthogonal Normalized + - Node # nodes = n-1 n > 0 Wavelength + + + + Ground state Particle in a Box Wavefunctions n=1 n=2 n=3 n=4
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15_02fig_PChem.jpg Probabilities Independent of n For 0 <x < a/2 Recall
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15_02fig_PChem.jpg Expectation Values Average position Independent of n Recall as 2ca=2 n From a table of integrals
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15_02fig_PChem.jpg Expectation Values From a table of integrals or from Maple.
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15_02fig_PChem.jpg Expectation Values oddeven
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15_02fig_PChem.jpg Expectation Values Recall
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Uncertainty Principle
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Free Particle k is determined by the initial velocity of the particle, which can be any value as there are no constraints imposed on it. Therefore k is a continuous variable, which implies that E, and are also continuous. This is exactly the same as the classical free particle. Two travelling waves moving in the opposite direction with velocity v.
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Probability Distribution of a Free Particle Wavefunctions cannot be normalized over Let’s consider the interval The particle is equally likely to be found anywhere in the interval
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15_04fig_PChem.jpg Classical Limit Probability distribution becomes continuous in the limit of infinite n, and also with limited resolution of observation.
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15_p19_PChem.jpg Particle in a Two Dimensional Box x y 0,0 a,0 0,b a,b Product wavefunction
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15_p19_PChem.jpg Particle in a Two Dimensional Box Separable
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Particle in a Two Dimensional Box
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Particle in a Square Box 1 1 2 3 1 3 2 2 5 1 1 2 03 2 2 41 213 108 265 Quantum Numbers Number of Nodes Energy
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Particle in a Three Dimensional Box
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Free Electron Models R R L 6 electrons HOMO LUMO EE
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16_01tbl_PChem.jpg Free Electron Models n H = 2 345 nm 375 nm 390 nm max n H = 3 n H = 4
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Particle in a Finite Well Inside the box
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Particle in a Finite Well Classically forbidden region as KE E n Limited number of bound states. WF penetrates deeper into barrier with increasing n. A,B, A’ B’ & C are determined by V o, m, a, and by the boundary and normalization conditions. Note: not ikx !!!
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16_03fig_PChem.jpg Core and Valence Electrons Weakly bound states - Wavefunctions extend beyond boundary. - Delocalized (valence)- Have high energy. - Overlap with neighboring states of similar energy Strongly bound states – Wavefunctioons are confined within the boundary - Localized. (core)- Have lower energy Two Free Sodium Atoms In the lattice x e -lattice spacing
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16_05fig_PChem.jpg Conduction Bound States (localized) Unbound states Occupied Valence States- Band Unoccupied Valence States - Band electrons flow to + increased occupation of val. states on + side Consider a sodium crystal sides 1 cm long. Each side is 2x10 7 atoms long. Sodium atoms Energy spacing is very small w.r.t, thermal energy, kT. Energy levels form a continuum Valence States (delocalized) bias
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16_08fig_PChem.jpg Tunneling Decay Length = 1/ The higher energy states have longer decay lengths The longer the decay length the more likely tunneling occurs The thinner the barrier the more likely tunneling occurs
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16_09fig_PChem.jpg Scanning Tunneling Microscopy Tip Surface work functions no contact Contact Contact with Applied Bias Tunneling occurs from tip to surface
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16_11fig_PChem.jpg Scanning Tunneling Microscopy
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16_13fig_PChem.jpg Tunneling in Chemical Reactions The electrons tunnel to form the new bond Small tunnelling distance relatively large barrier
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16_14fig_PChem.jpg Quantum Wells States Allowed Fully occupied No States allowed States are allowed Empty in Neutral X’tal. Alternating layers of Al doped GaAs with GaAs 3D Box a = 1 to 10 nm thick b = 1000’s nm long & wide Energy levels for y and z - Continuous Energy levels for x - Descrete 1D Box along x !! Band Gap of Al doped GaAs > Band Gap GaAs Cond. Band GaAs < Cond. Band Al Doped GaAs e’s in Cond. Band of GaAS in energy well. Semi Conductor
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16_14fig_PChem.jpg Quantum Wells finite barrier QW Devices can be manufactured to have specific frequencies for application in Lasers. E ex < Band Gap energy Al doped GaAS E ex > Band Gap energy GaAS EE
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16_16fig_PChem.jpg Quantum Dots Crystalline spherical particles1 to 10 nm in diameter. Band gap energy depends on diameter Easier and cheaper to manufacture 3D PIB !!!
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16_18fig_PChem.jpg Quantum Dots
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Quantum Dot Solar Cells Dye Sensitized Solar Cell
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Background Organic Polymer Solar Cells Fullerenes(Acceptor) Organic polymer (Donor) Organic polymersFullerene(PCBM)
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