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Published byMildred Williamson Modified over 9 years ago
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Basic MOSFET I-V characteristic(1/3) High circuit operation speed large I ON small Subthreshold Slope (SS) Low power consumption small I OFF (Silicon-on-insulator or Fully deplete device) 1
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Basic MOSFET I-V characteristic(2/3) 2
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Basic MOSFET I-V characteristic(3/3) 3
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CMOS Technology Trend 4 22nm 2011 2009 FinFETS Current Si-based technology scaling innovations ▬ Mobility booster: Uniaxial Compressive Strain SiGe S/D for p-FET ▬ Gate leakage reduction: High-k / Metal Gate ▬ Short Channel Effect suppression: FinFETs High mobility substrate: — Ge
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5 Characteristics of (111) Ge n+/p Diodes The high resistivity substrates have ideality factor (~ 1.1) but low on/off ratio. The high on/off ratio ~ 10 5 of low resistivity substrates is probably due to the reduction of diffusion current. 55
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6 Transfer and Output Characteristics of (111) Ge n-MOSFET The S.S. is ~140mV/decade with on/off ratio ~ 8 × 10 4 for Is. Ideal output characteristics 66
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7 Effective Electron Mobility of (111) Ge n-MOSFET The peak mobility reaches 2200 cm2/V-s owing to the suppression of Coulomb scattering using low doping Ge substrates. As substrate doping concentration increases, lower electron mobility is observed. 77
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