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Higher order effects Channel Length Modulation Body Effect Leakage current.

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Presentation on theme: "Higher order effects Channel Length Modulation Body Effect Leakage current."— Presentation transcript:

1 Higher order effects Channel Length Modulation Body Effect Leakage current

2 Body Effect – The threshold voltage is a function of Vsb Gate Source Drain n+ p-type Body

3 Leakage Current For some chips as much as 50% of the power consumption stems from leakage current – current when transistors are OFF

4 There are different kinds of leakage current (current when the transistor is OFF) There are different kinds of leakage current: Gate current – tunneling through the gate RB leakage current Subthreshold current (equation is similar to that for a BJT) S Vd n+ Vgs p


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