1. Frank Lehner U Zurich Characterization of inner layer sensors DØ Inner Layer Sensor Production Readiness Review FNAL, 8/8/2003 M. Demarteau, R. Demina, S. Korjenevski, F. Lehner, R. Lipton, H.S. Mao, B. McCarthy, R. Smith

2. Frank Lehner U Zurich L0/L1 Sensor Layout  p+n single-sided on 6’’ wafer  AC coupling, polysilicon biased, single guard  Radiation hard u Layer 0: ~1.2·10 13 1 MeV n/cm 2 /fb -1  Readout strips  L0: 256 R/O strips w/ intermediate traces and 25  m pitch  L1: 384 R/O strips w/ intermediate traces and 29  m pitch

3. Frank Lehner U Zurich L0/L1 Sensor Specs  overview of sensor specifications SpecificationL0L1 Wafer 320±20  m,warp<50  m Depletion Voltage40< Udep<300 V Leakage Current<100nA/cm 2 Junction Breakdown>700V Implant width6m6m7m7m Aluminum resistance< 30  /cm Coupling Capacitance>10 pF/cm CC breakdown>100V Interstrip cap<1.2 pF/cm R Polysilicon0.8 ± 0.3 M  Active length (mm)77.360 Active width (mm)12.80022.272 Cut length (mm)79.400 Cut width (mm)14.84024.312 R/O (strip) pitch50 (25)58 (29) Defective strips<1%

4. Frank Lehner U Zurich HPK wafer layout for L0/L1  HPK 6’’-wafer layout u 4 sensors/wafers for L1 u 4 test structures on wafer u receive one “half moon” adjacent to long side of sensor u test structure used for evaluation and cross checks of electrical properties

5. Frank Lehner U Zurich HPK layer 1 production  Procurement strategy: u ordered only layer 1 prototypes for qualification u layer 0 very similar, but detailed drawings were not ready so early due to complicated layout w/ analog cable  10 prototypes for layer 1 ordered in April 2002, shipped to FNAL in Sept 2002 u extensively tested u 3 of them irradiated  3 more prototypes ordered in May 2003, shipped to FNAL in July 2003 u testing results included in PRR document/talk  rough estimate of “yield”, based on serial numbering ~54%, lower than for outer layer sensors (~70%)  HPK QA: 2 (out of 13) had one defect, 1 (out of 13) had two defects

6. Frank Lehner U Zurich Layer 1 – Testing Results  Outline: u test structure measurements s Coupling Capacitors and CC breakdown s Resistances s Strip capacitances s MOS flatband u layer 1 sensors s depletion voltages s Leakage currents s Capacitances s Resistances s defect channels

7. Frank Lehner U Zurich Layer 1 test structure – Coupling Capacitors  test structure for CC w/ exact same length than real strips  “real” capacitance value extracted at low frequency limit due to low-pass filter  115 pF or 14.8 pF/cm - within specs  CC breakdown ~220V  CC breakdown on “baby” detector >170V

8. Frank Lehner U Zurich Layer 1 test structure – implant and aluminum resistance  implant resistance u on two different test structures (e.g. N-LW20) u 130 K  /cm  Al resistance u meander like trace ~35  /cm u on “baby” detector ~22.1  /cm (within specs)

9. Frank Lehner U Zurich Layer 1 test structure – polysilicon resistance R_poly  measured on baby detector as well as on polysilicon resistor arrays  measurement on intermediate strips provide directly value for R_poly, R/O strips give R_poly+R_implant  R_poly: 0.7 ± 0.1 M 

10. Frank Lehner U Zurich Layer 1 test structure – strip capacitance  total (load) strip capacitance measured on baby detector (7 R/O strips over full length)  total (load) capacitance includes both neighbors and the backplane  important to understand since noise in preamp depends on capacitive load  determined to be 1.1 pF/cm at 1 MHz (the relevant frequency for SVX4)  capacitance value is constant already at a bias of 10 V

11. Frank Lehner U Zurich Layer 1 test structure – interstrip capacitance  largest contribution to total strip capacitance for fine pitch detectors is from R/O strip neighbors  measured on baby detector (at 1 MHz): u 0.39 pF/cm to one neighbor u 0.79 pF/cm to both neighbors  our spec calls for <1.2 pF/cm for both neighbors

12. Frank Lehner U Zurich Layer 1 test structure – MOS flatband  test structures have a 0.5 mm 2 pMOS (metal/oxide/silicon)  have measured the CV characteristics to determine the flatband  CV curve looks like expected for MOS-capacitors u large positive gate Voltage: accumulation region, majority carriers (n) accumulate under gate u negative gate voltage: inversion region, minority carriers invert the region at interface  transition happens at ~-2V (ideally at 0V)  fixed oxide charge shifts the flatband by  V=  Q/C =>  Q<10 -11 1/cm 2  small amount of oxide charge

13. Frank Lehner U Zurich Layer 1 silicon sensors  Measurements on all 13 L1 sensors u I-V u Leakage current stability over longer times u C-V u AC-scans u DC-scans u interstrip capacitances and resistances

14. Frank Lehner U Zurich Layer 1 silicon sensors – leakage currents  measured leakage current at probe sites  all sensors (except one) have less than 80nA at U=800V  sensors have very low current densities of ~0.5 nA/cm 2  no sensor showed breakdown  difference to HPK measurements less than 35nA  Nota bene: HPK uses 25±1ºC, we measure at 20±1ºC  T may cause up to 50% current change

15. Frank Lehner U Zurich Layer 1 silicon sensors – leakage current stability  setup at FNAL allows long term biasing of up to 7 ladders with current, temp & humidity monitoring  sensors kept for 96h at various N 2 flow rates at bias voltage of 300V  no runaway or long term drift is observed  currents drop in beginning follows dew point decrease  stability test will be part of QA program for sample of sensors

16. Frank Lehner U Zurich Layer 1 silicon sensors – depletion voltage  FDV from 1/C 2 vs bias  have used so far for L1 sensors “straight line” fits  HPK uses 2%-rule: u FDV is taken at the lowest voltage point where change in 1/C 2 is less than 2%  correlation between us and HPK  2% rule estimates FDV systematically ~20V higher  we will adopt 2% rule at our probing sites  also requested to HPK to send us “raw capacitance” values to cross check our results

17. Frank Lehner U Zurich Layer 1 silicon sensors – AC scan  We performed AC scans on all 13 L1 sensors u LCR frequency 10- 100 kHz u measure dielectric currents through capacitor up to 80V  dielectric currents < 100pA  in total found 4 pinholes and two opens out of 13 sensors

18. Frank Lehner U Zurich Layer 1 silicon sensors – DC scan  performed DC scan on strips  average leakage current/strip is 40pA  no leaky strips (>10nA) observed  use also DC scan to measure poly resistors u “intermediate” strips give value for R_poly u R/O strips give series of R_poly and R_implant u both values are consistent with test structure measurements  interstrip resistance on sensors evaluated – found to be O(G  )

19. Frank Lehner U Zurich Layer 1 silicon sensors – total strip capacitance  total (load) strip capacitance on L1 sensors  measured extensively on few sensors – all in agreement  total strip capacitance with respect to two neighbor R/O strips and to the backplane u at 1 MHz, the relevant capacitance is 1.1 pF/cm u in agreement to test structures u bias dependence s capacitance at certain frequency does not change above 20V bias  interstrip capacitance (to one neighbor) u determined to be 0.4 pF/cm u in agreement to test structures

20. Frank Lehner U Zurich Layer 1 silicon sensors – overview of sensor probing  we verified in AC & DC scans that 10 out of 13 sensors had no single strip defect  we confirmed the HPK findings of in total four bad strips on three sensors  in addition, we found two bad strips on one sensor defect rate is at the 1‰ level!

21. Frank Lehner U Zurich Layer 1 silicon sensors – mechanical measurements  measured all ten L1 sensors from Sept 2002 on optical metrology machine (OGP at FNAL)  verified mechanical dimensions of sensor to within 4 µm, cut edges extremely accurate  grid of 11 x 11 on sensor to determine flatness u average flatness for 10 sensors is 45 µm u maximum warp on sensor L1-3 is 48 µm u spec calls for 50 µm “on a best effort basis”, will reject sensors with flatness of more than 100 µm

22. Frank Lehner U Zurich Layer 2 silicon sensors – visual inspection  setup inspection station and trained technician to perform visual inspections on all new incoming sensors u check sensor edges and sides for chips/cracks u check pad cleanness u look for major scratches on sensor surface u inspection time: 20-25’ per sensor, guidelines for visual inspection exists u visual inspection important part of key test program  first results on ~25 scanned L2 sensors u chips s about 50% of sensors have small, and unproblematic chips at edges up to 30  m in size s very few (2-3) have chips extending about 50  m inward s one sensor so far found with extreme damage u scratches s only one major scratch s deeper scratch on traces will flag sensor for electrical (strip) tests

23. Frank Lehner U Zurich Layer 2 silicon sensors – visual inspection  cleanness: u sensors rather clean compared to Run IIa experience u several kinds of organic residue/photoresist on sensor u pads are clean and surface finish looks OK u few sensors have fiducials scratched  grading u developed criteria for grading from visual inspection: good, medium and poor u poor does not necessarily mean reject but increased attention in upcoming tests (electrical tests)

24. Frank Lehner U Zurich Layer 1 silicon sensors – summary  presented results on electrical testing on test structures and L1 silicon sensor  all important electrical parameters have been measured on both, test structures and sensors  all values are found to be consistent and in agreement with our specs  overall number of strip defects is extremely low: 1‰ (require: <1%)  good agreement between HPK and our results  mechanical results show excellent quality of cutting edge and low sensor warp  sensors are of exquisite quality in all aspects  Looking forward to probe them …