Presentation is loading. Please wait.

Presentation is loading. Please wait.

Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, “Capacitance-voltage.

Published byErika Knight Modified over 9 years ago

Similar presentations

Presentation on theme: "Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, “Capacitance-voltage."— Presentation transcript:

1 Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, “Capacitance-voltage studies on enhancement-mode InGaAs metal-oxidesemiconductor field-effect transistor using atomic-layer-deposited Al 2 O 3 gate dielectric”, Appl. Phys. Lett., 88, 263518 (2006).

2 Outline Cross sections of an InGaAs MOSFET and an capacitor Leakage current in different thermal annealing C-V curve at high frequence I-V Characteristic Curve on InGaAs MOSFET Hysteresis in the CV loops measured at half value of acc- capacitance vs the small signal frequency The accumulation capacitances and the normalized ones vs the small signal frequency at a wide range on the similar device Split-CV Curve on MOSFET The flat-band voltages vs the small signal with different oxide thicknesses

3 Cross Sections of an E-mode Al 2 O 3 /InGaAs MOSFET and an Capacitor At 750-850⁰ by RTA in N 2 Al 2 O 3 : Amorphous film

4 Leakage Current in Different Thermal Annealing 850 ⁰ C is critical temperture

5 C-V Curve at High Frequence

6 Hysteresis in the C-V Loop unannealing─hysteresis of ~200-500mV 10-50 mV The bulk and interface properties start to degrade after annealing temperture higher than 800 ⁰ C.

7 The acc-Capacitances vs. Frequency at Wide Range Frequency dispersion is only 1% at this frequency range

8 The Flat-band Voltages vs The Small Signal Frequency

9 Split-CV Curve on MOSFET

10 I-V Characteristic Curve of Enhancement-mode In-GaAs MOSFET

Download ppt "Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, “Capacitance-voltage."

Similar presentations

The Once and Future Computer: Post-Moore Mechanical Circuits Matthew Spencer BEARS Symposium Lightning Talk 2014-02-13.

The Once and Future Computer: Post-Moore Mechanical Circuits Matthew Spencer BEARS Symposium Lightning Talk
Techniques of tuning the flatband voltage of metal/high-k gate-stack Name: TANG Gaofei Student ID: 20222159 The Hong Kong University of Science and Technology.

Techniques of tuning the flatband voltage of metal/high-k gate-stack Name: TANG Gaofei Student ID: The Hong Kong University of Science and Technology.
2011.12.26 Chun-Chieh Lu Carbon-based devices on flexible substrate 1.

Chun-Chieh Lu Carbon-based devices on flexible substrate 1.
University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling.

University of Toronto ECE530 Analog Electronics Review of MOSFET Device Modeling Lecture 2 # 1 Review of MOSFET Device Modeling.
Chapter 6 The Field Effect Transistor

Chapter 6 The Field Effect Transistor
Spring 2007EE130 Lecture 33, Slide 1 Lecture #33 OUTLINE The MOS Capacitor: C-V examples Impact of oxide charges Reading: Chapter 18.1, 18.2.

Spring 2007EE130 Lecture 33, Slide 1 Lecture #33 OUTLINE The MOS Capacitor: C-V examples Impact of oxide charges Reading: Chapter 18.1, 18.2.
VLSI Design CMOS Transistor Theory. EE 447 VLSI Design 3: CMOS Transistor Theory2 Outline Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V.

VLSI Design CMOS Transistor Theory. EE 447 VLSI Design 3: CMOS Transistor Theory2 Outline Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V.
Lecture 11: MOS Transistor

Lecture 11: MOS Transistor
Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor and its applications.

Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor and its applications.
Spring 2007EE130 Lecture 35, Slide 1 Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: Structure and operation Reading: Chapter 17.1.

Spring 2007EE130 Lecture 35, Slide 1 Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: Structure and operation Reading: Chapter 17.1.
Lecture 15 OUTLINE MOSFET structure & operation (qualitative)

Lecture 15 OUTLINE MOSFET structure & operation (qualitative)
Metal-Oxide-Semiconductor (MOS)

Metal-Oxide-Semiconductor (MOS)
Introduction to CMOS VLSI Design Lecture 3: CMOS Transistor Theory David Harris Harvey Mudd College Spring 2004 from CMOS VLSI Design A Circuits and Systems.

Introduction to CMOS VLSI Design Lecture 3: CMOS Transistor Theory David Harris Harvey Mudd College Spring 2004 from CMOS VLSI Design A Circuits and Systems.
Spring 2007EE130 Lecture 32, Slide 1 Lecture #32 OUTLINE The MOS Capacitor: Capacitance-voltage (C-V) characteristics Reading: Chapter 16.4.

Spring 2007EE130 Lecture 32, Slide 1 Lecture #32 OUTLINE The MOS Capacitor: Capacitance-voltage (C-V) characteristics Reading: Chapter 16.4.
Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.
EE105 Fall 2007Lecture 16, Slide 1Prof. Liu, UC Berkeley Lecture 16 OUTLINE MOS capacitor (cont’d) – Effect of channel-to-body bias – Small-signal capacitance.

EE105 Fall 2007Lecture 16, Slide 1Prof. Liu, UC Berkeley Lecture 16 OUTLINE MOS capacitor (cont’d) – Effect of channel-to-body bias – Small-signal capacitance.
MOS Capacitors ECE 2204. Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.

MOS Capacitors ECE Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.
Mobility Chapter 8 Kimmo Ojanperä S-69.4123, Postgraduate Course in Electron Physics I.

Mobility Chapter 8 Kimmo Ojanperä S , Postgraduate Course in Electron Physics I.
OSCILLATION SUPPRESSION COMPONENT INVESTIGATION: CAPACITANCE AS A FUNCTION OF TEMPERATURE AND VOLTAGE MICHAEL GURR ME304 FALL 2012.

OSCILLATION SUPPRESSION COMPONENT INVESTIGATION: CAPACITANCE AS A FUNCTION OF TEMPERATURE AND VOLTAGE MICHAEL GURR ME304 FALL 2012.
Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 20.1 Field-Effect Transistors  Introduction  An Overview of Field-Effect.

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 20.1 Field-Effect Transistors  Introduction  An Overview of Field-Effect.

Similar presentations

Ads by Google