1. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL RAM Basics Anselmo Lastra

2. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Topics VGA timing project Deadline Thursday Class time change Semester project topics RAMs

3. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Class Time Preference for keeping TTh Unfortunately, no open time for all

4. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Projects Some have project already Polygon pipeline Stopping points: Gouraud, texturing, etc. Ray caster/tracer Similar possible milestones Can share common parts

5. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Simple Hdw View of RAM Some capacity 2 k k bits of address lines Often multiplexed Maybe have read line, clock, chip select Have a write enable line

6. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Reading Setup address lines Activate enable, read/write line Data available after specified amt of time

7. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Writing Setup address lines Setup data lines Activate write line

8. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Static vs Dynamic RAM SRAM vs DRAM DRAM stores charge in what’s essentially capacitor Disappears over short period of time Must be refreshed (rewritten/recharged) SRAM easier to use Faster More expensive per bit Smaller sizes

9. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Structure of SRAM Control logic One memory cell per bit Cell consists of one or more transistors Not really a latch made of logic Logic equivalent

10. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Bit Slice Cells connected to form 1 bit position Word Select gates one latch from address lines Note it selects Reads also B (and B not) set by R/W, Data In and BitSelect Funny thing here when you write. What is it?

11. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Bit Slice can Become Module Basically bit slice is a X1 memory Next

12. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL 16 X 1 RAM Now shows decoder

13. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Tri-State Have three states: H, L, and Hi-Z High impedance Behaves like no output connection if in Hi-Z state Allows connecting multiple outputs

14. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Multiplexed with Hi-Z Normal behavior is blue area

15. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Row/Column If RAM gets large, there is a large decoder Also run into chip layout issues Larger memories usually “2D” in a matrix layout Next Slide

16. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL 16 X 1 as 4 X 4 Array Two decoders Row Column Address just broken up Not visible from outside

17. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Change to 4 X 2 RAM Minor change in logic Also pinouts

18. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Realistic Sizes Imagine 256K memory as 32K X 8 One column layout would need 15-bit decoder with 32K outputs! Can make a square layout with 9- bit row and 6-bit column decoders

19. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL SRAM Performance Current ones have cycle times in low nanoseconds (say 2.5ns) Used as cache (typically offchip secondary cache) Sizes up to 8Mbit or so for fast chips

20. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Using SRAM on Spartan II Recall block SRAM available on chip 11 4Kb blocks Configured in many ways (table)

21. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Using from Verilog Instantiate a block (here called R1) RAMB4_S8_S8 R1 (.DOA (data_a),.DOB (data_b),.ADDRA (addr_a),.ADDRB (addr_a),.CLKA (clk),.CLKB (clk),.DIA (data_in),.DIB (data_in),.ENA (ena),.ENB (enb),.RSTA (rsta),.RSTB (rstb),.WEA (wea),.WEB (web));

22. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Can Initialize Have to do it two ways, one for simulator, another for hardware //synthesis attribute INIT_00 of R1 is "08192A3B4C5... total of 256 bits (64 hex characters)..." //synthesis attribute INIT_01 of R1 is "08192A3B4C5D6E7F08192A3B4C5D6E7F08192A3B4C5D6E7F0 8192A3B4C5D6E7F“ // Up to INIT_0F Above is for hardware (next software)

23. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL For Simulation //synopsys translate_off defparam R1.INIT_00 = 64'h08192A3B4C5D6E7F08192A3B4C5D6E7F08192A3B4 C5D6E7F08192A3B4C5D6E7F; // 256-bit hex value defparam R1.INIT_01 = 64'h08192A3B4C5D6E7F08192A3B4C5D6E7F08192A3B4 C5D6E7F08192A3B4C5D6E7F; // 256-bit hex value... defparam R1.INIT_0F = 64'h08192A3B4C5D6E7F08192A3B4C5D6E7F08192A3B4 C5D6E7F08192A3B4C5D6E7F; // up to INIT_0F //synopsys translate_on

24. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Look at Test Code My RAM loading example from undergrad class http://www.cs.unc.edu/~lastra/comp190/Assignments/block_ram_C.txt

25. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Dynamic RAM Capacitor can hold charge Transistor acts as gate No charge is a 0 Can add charge to store a 1 Then open switch (disconnect) Can read by closing switch Explanation next

26. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Precharge and Sense Amps You’ll see “precharge time” B is precharged to ½ V Charge/no-charge on C will increase or decrease voltage Sense amps detect this

27. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL DRAM Characteristics Destructive Read When cell read, charge removed Must be restored after a read Refresh Also, there’s steady leakage Charge must be restored periodically

28. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL DRAM Logical Diagram

29. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL DRAM Read Signaling Lower pin count by using same pins for row and column addresses Delay until data available

30. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL DRAM Write Timing

31. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL DRAM Refresh Many strategies w/ logic on chip Here a row counter

32. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL CAS Before RAS Set column address Apply CAS first (opposite of RW) Then toggle RAS enough times to cycle through row addresses On-board refresh counter applies the row addresses

33. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Timing Say need to refresh every 64ms Distributed refresh Spread refresh out evenly over 64ms Say on a 4Mx4 DRAM, refresh every 64ms/4096=15.6 us Total time spent is 0.25ms, but spread Burst refresh Same 0.25ms, but all at once May not be good in a computer system Refresh takes 1 % or so of total time

34. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Larger/Wider Memories

35. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Bidirectional Lines One set of data pins Used as input for write As output for read Tri-state Makes sense because don’t need both at once

36. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Page Mode DRAM DRAMs made to read & write blocks Example Assert RAS, leave asserted Assert CAS multiple times to read sequence of data Similar for writes

37. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Synchronous DRAM (SDRAM) Common type in PCs late-90s Burst transfers Multiple banks Pipelined Start read in one bank after another Come back and read the resulting values one after another

38. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL SDRAM on Xess Board Relatively small at 128Mbits 2M X 4 banks X 16 bits Refresh every 64ms Supports pipelining Bidirectional data lines Detailed info in a few slides

39. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL DDR DRAM Double Data Rate SDRAM Transfers data on both edges of the clock Currently popular

40. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL RAMBUS DRAM (RDRAM) Another attempt to alleviate pinout limits Many (16-32) banks per chip Made to be read/written in packets Up to 400MHz bus speeds But DDR doing very well also

41. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL DRAM Controllers Very common to have circuit that controls memory Handles banks Handles refresh Multiplexes column and row addresses RAS and CAS timing Northbridge on PC chip set

42. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Next: Specifics on Our Chip Protocol for reading/writing Activate row first Then read/write with column Initialization Setting parameters

43. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Block Diagram

44. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Activate Row

45. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Read (Select column)

46. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Burst Reads

47. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Read with Autoprecharge

48. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Read w/o Autoprecharge

49. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Random Reads

50. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Alternating Banks

51. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Single Write

52. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Initializing See P.9 of Micron datasheet Just NOP commands for 100 us Precharge all banks Two Auto Refresh commands Then load mode register

53. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Mode Register Several operating modes of SDRAM Burst or single 0 2 or 3 Order or accesses 1,2,4,8 or full page

54. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL DRAM Links DRAM on XSA-100 board http://www.hynix.co.kr/datasheet/pdf/dram/(2)HY57V281620A(L)T-I.PDF Low-Tech RAM description http://www.arstechnica.com/paedia/r/ram_guide/ram_guide.part1-1.html Datasheets http://www.hynix.co.kr/datasheet/pdf/dram/(2)HY57V281620A(L)T-I.PDF http://download.micron.com/pdf/datasheets/dram/128msdram_f.pdf http://www.infineon.com/cmc_upload/documents/018/329/hb39s128CT.pdf Verilog model http://download.micron.com/downloads/models/verilog/sdram/sdr/128meg/ mt48lc8m16a2.zip

55. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Assignment Try Block RAM Maybe to scan small stamps Or as character/sprite device Make DRAM controller to refresh screen Deadline – end of next week

56. The UNIVERSITY of NORTH CAROLINA at CHAPEL HILL Next Time Thursday 9/11 read Kurt Akeley, "Reality Engine Graphics", SIGGRAPH 93Kurt Akeley, "Reality Engine Graphics" Link is http://doi.acm.org/10.1145/166117.166131