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Semiconductor Memories.  Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on a semiconductor-based.

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Presentation on theme: "Semiconductor Memories.  Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on a semiconductor-based."— Presentation transcript:

1 Semiconductor Memories

2  Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on a semiconductor-based integrated circuit. Introduction

3 Semiconductor memory

4 Example of Semiconductor memory  Examples of semiconductor memory includes Non-volatile memory such as Read-only memory (ROM), Magnetoresistive Random Access Memory (MRAM), and Flash memory.  It also includes volatile memory such as Static Random Access Memory (SRAM)

5 Cont.,  These memories can be constructed to store large amount of data entirely within a computer system.  The number of locations and the size of storing data may vary from memory to memory.  Each location is called Memory cell.

6 Memory cell operation

7 Memory cell  The memory cell is used to store single bit of information.  The memory cell is fabricated by using either bipolar Metal Oxide Semiconductors (MOS) or Complementary Metal Oxide Semiconductors (CMOS).

8 Semiconductor memory classification

9 Memory Architecture: Decoders

10 Array-Structured memory Architecture

11 Hierarchical memory Architecture

12 Memory Timing Definitions

13 Memory Timing Approaches

14 Read-Write Memories (RAM) Static (SRAM)  Data stored as long as supply is applied  Large (6 transistor/cell)  Fast  Differential

15 Read-Write Memories Dynamic (DRAM)  Periodic refresh required  Small (1-3 transistors/cell)  Slower  Single Ended

16 6- Transistor CMOS SRAM Cell

17 CMOS SRAM Analysis (Write)

18 CMOS SRAM Analysis (Read)

19 6T- SRAM - Layout V DD GND Q Q WL BL M1 M3 M4M2 M5M6

20 3- Transistor DRAM Cell

21 3-T DRAM Layout BL2BL1GND RWL WWL M3 M2 M1

22 DRAM Cell  1T DRAM requires a sense amplifier for each bit line, due to charge redistribution read-out.  DRAM Memory cells are single ended in contrast to SRAM cells.

23 1-T DRAM cell

24 Semiconductor Memory Trends Memory Size as a function of time: x 4 every three years

25 Semiconductor Memory Trends Increasing die size factor 1.5 per generation Combined with reducing cell size factor 2.6 per generation

26 Semiconductor Memory Trends Technology feature size for different SRAM generations

27 The End ……. Thank You …….


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