1. IREAP Studies of HPM Effects in Electronic Systems J. Rodgers, M. Holloway (DEPS Scholar), T. Firestone and V. L. Granatstein, Institute for Research in Electronics and Applied Physics University of Maryland College Park, MD 20742 rodgers@umd.edu

2. IREAP Outline The basic electronics of HPM effects Summary of 2008 work –Began testing of mixed-signal systems –Studied HPM susceptibility of sensors (ARL) –Development of systems modeling capability Wideband multi-frequency test source (AFOSR-Plasma Physics) Proposed 2009 Effort

3. IREAP Scope of Work HPM Source EM Coupling Cavity Fields Circuit Response HPM Effects Models Test Validate

4. IREAP Large-signal (LS) Semiconductor Electronics Typical LS current- voltage characteristics Input Pad Cross section of a planar semiconductor QM NL

5. IREAP Semiconductor junctions + package/trace reactance  Nonlinear resonances  NL Frequency products Baseband RF Both frequency bands can produce effects. HPM

6. HPM-driven instability in circuits Typical RF Voltage @ IC Input Circuit Response

7. The Effects “Spectrum”

8. IREAP HPM Effects in Sensors & Detectors Applications: Communications, Imaging, Ranging, Detection, Encoding IR PIN Photo Detector Hall Effect Sensor

9. Soft effects could be fatal to a system Over-Current: PMOS and NMOS conduct at the same time! Cascaded Gain Effects 3-10 times normal current

10. IREAP HPM “Over-Current” Effect in CMOS PMOS NMOS I ds VgVg

11. IREAP Can existing codes (e.g. Agilent ADS) be used to model HPM effects?

12. IREAP RF Model Libraries for Standard IC Packages HPM

13. IREAP The EM characteristics of electrically small (d< ) features (IC packaging leads, bonding wires, etc.) can be extracted and modeled as lumped elements.

14. IREAP Parasitic elements are then coupled to nonlinear circuit models Bond wire and package model Nonlinear IC model

15. Models agree well at the device level. Model parameters extracted from process technology files. Some modification required to account for NQS and HF device operation. Use nonlinear device and harmonic balance simulation mode (s>3). Comparison of measured & simulated over-current effect in AMI 0.5  CMOS CMOS ESD

16. IREAP AGILENT ADS Design Flow HPM

17. IREAP Development of Novel Wideband HPM Test Sources

18. IREAP Frequency (MHz / 10) Time (  s) Loop Gain = 15 dB Frequency (MHz / 10) Loop Gain = 5 dB Time (  s) HPM source with chirp-hop output frequency

19. IREAP Collaborations NSWC to conduct effects tests on vehicles using UMD source. ARL: performing basic effects tests on various sensors (e.g. IR) of interest. AFRL: EMERD NRL Sandia: new basic research program in progress.

20. IREAP Research Personnel PhD: –Todd Firestone, graduated December 2008 –Mike Holloway, DEPS Scholarship, projected to graduate fall 2009 Postdoctoral: –Dr. Zeynep Dilli: QM device physics and modeling, joined group Jan. 2009 Undergraduates: –Collin Kennedy & Mark Strother (juniors physics)