1. EFFECT OF LITHIUM FLUORIDE ON THE DIELECTRIC PROPERTIES OF BARIUM TITANATE IUPAC 9 th International Conference on Novel Materials and Synthesis (NMS – IX) October 17 – 22, 2013, Shanghai, CHINA

2. SUMMARY Introduction Experimental procedures Results and discussion Conclusion References

3. INTRODUCTION

4. INTEREST FOR MATERIALS

5. CERAMICS PRODUCTS

6. ABO 3 RELATED MATERIALS

7. APPLICATIONS OF ABO 3 PEROVSKITES Capacitors Sensors Resonators Piezoelectric actuators Pyroelectric infrared detectors Electro-optical modulators Computer and mobile phone memories…

8. COMPUTER’S MEMORIES T. Shiosaki, The recent progress in the research and development for ferroelectric memory in Japan (1997)

9. OBJECTIVES

10. 193 K278 K393 K BaTiO 3 PROPERTIES

11. BaTiO 3 UNIT CELL AT 300 K

12. EXPERIMENTAL PROCEDURES

13. SAMPLES PREPARATIONS

14. x BaCO 3 + y TiO 2 Grinding, Calcination 1100 °C BaTiO 3 +CO 2 x wt. % LiF (1-x) % BaTiO 3 + x % LiF Grinding Sintering (T °C)

15. METHODS OF INVESTIGATIONS

16. RESULTS AND DISCUSSION

17. DRX spectra of BaTiO 3 ceramics sintered with 2 wt. % LiF at 950 ° C for 2 h BTO (1.03) BTO (1.00) BTO (0.97) 2  (°) BaO/TiO 2 a (Å) a (Å) c(Å) c(Å) c(Å) c(Å) 0.973.9964.032 1.004.011- 1.034.014-

18. Effect of BaO/TiO 2 ratio on the permittivity of BaTiO 3 ceramics sintered with 2 wt. % LiF at 950 ° C for 2 h BaO/TiO 2  T C ( K) ’r’r’r’r tan  0.970.0530312000.015 1.000.14529842000.008 1.030.1728357000.006

19. Effect of LiF amount on permittivity of BaTiO 3 (1.00) ceramics sintered at 950 ° C for 2 hLiF T C (K) ’r’r’r’r tan  1 wt. %0.1433836500.013 2 wt. %0.14529842000.008 3 wt. %0.14530352000.007

20. LiF T C ( K) ’r’r’r’r tan  1 wt. %0.0631315000.010 2 wt. %0.1728357000.006 3 wt. %0.1626861000.006 Effect of LiF amount on permittivity of BaTiO 3 (1.03) ceramics sintered at 950 ° C for 2 h

21. t sint. (h)  T C (K) ’r’r’r’r tan  20.14529842000.008 80.15535331000.005 Effect of holding time on permittivity of BaTiO 3 (1.00) ceramics sintered with 2 wt. % LiF at 950 ° C

22. t sint. (h)  T C (K) ’r’r’r’r tan  20.1728357000.006 80.1829339000.004 Effect of holding time on permittivity of BaTiO 3 (1.03) ceramics sintered with 2 wt. % LiF at 950 ° C

23. T sint. (°C)  T C (K) ’r’r’r’r tan  7500.023733000.015 8500.1428334000.008 9500.14529842000.008 11000.1528857000.005 Effect of sintering temperature on permittivity of BaTiO 3 (1.00) ceramics sintered with 2 wt. % LiF for 2 h

24. T sint. (°C)  T C (K) ’r’r’r’r tan  7500.0953939500.012 8500.16528127500.008 9500.1728357000.006 11000.1726352500.005 Effect of sintering temperature on permittivity of BaTiO 3 (1.03) ceramics sintered with 2 wt. % LiF for 2 h

25. Temperature dependence of permittivity and losses for BaTiO 3 (1.03) ceramic sintered with 2 wt. % LiF at 950 ° C for 2 h in free air

26. Atmosphere T C (K) ’r’r’r’r tan  Free air0.1728357000.006 Sealed tube0.063838000.017 Effect of sintering atmosphere on permittivity of BaTiO 3 (1.03) ceramics sintered at 950 °C with 2 wt. % LiF for 2 h

27. Sintering T C (K) ’r’r’r’r tan  950°C, 2h, air0.1728357000.006 950°C, 2h, air +950°C, 48h, ST 0.1726367500.006 950°C, 2h, air +1200°C, 2h, ST 0.1724886500.006 Temperature dependence of permittivity of BaTiO 3 (1.03) ceramics sintered with 2 wt. % LiF in various conditions

28. T sint. (° C) TiO 2 (wt. %) BaO (wt.%) F (wt.%) Li (wt.%) F losses (wt.%) Li losses (wt.%) 85034.065.081.150.292145 90034.3565.081.110.252453 95034.5065.090.770.184766 110034.8065.080.470.0946882 Chemical composition, fluorine and lithium losses of BTO (1.03) ceramics sintered with 2 wt. % LiF for 2 h at various temperatures

29. DTA and TG thermograms of 98 wt. % BTO (1.03) + 2 wt. % LiF DTA TG 280 °C 630 °C

30. Micrographs of ceramics sintered at 850 or 950 °C 850°C 950°C

31. Auger spectra of BaTiO 3 (1.03) fractured ceramics sintered with 2 wt. % LiF at 950 ° C for 2 h

32. CONCLUSION

34. NORMS OF TYPE II CLASS Z5U CAPACITORS + 22 % - 56 % Z5U 98 wt. % BTO (1.03) + 2 wt. % LiF, 950 °C, 2 h

35. REFERENCES

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