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Digital Integrated Circuits© Prentice Hall 1995 Memory SEMICONDUCTOR MEMORIES Adapted from Jan Rabaey's IC Design. Copyright 1996 UCB.
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Digital Integrated Circuits© Prentice Hall 1995 Memory Chapter Overview
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Digital Integrated Circuits© Prentice Hall 1995 Memory Semiconductor Memory Classification
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Digital Integrated Circuits© Prentice Hall 1995 Memory Memory Architecture: Decoders
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Digital Integrated Circuits© Prentice Hall 1995 Memory Array-Structured Memory Architecture
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Digital Integrated Circuits© Prentice Hall 1995 Memory Hierarchical Memory Architecture
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Digital Integrated Circuits© Prentice Hall 1995 Memory MOS NOR ROM
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Digital Integrated Circuits© Prentice Hall 1995 Memory MOS NAND ROM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Equivalent Transient Model for MOS NOR ROM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Equivalent Transient Model for MOS NAND ROM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Propagation Delay of NOR ROM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Decreasing Word Line Delay
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Digital Integrated Circuits© Prentice Hall 1995 Memory Precharged MOS NOR ROM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Floating-gate transistor (FAMOS)
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Digital Integrated Circuits© Prentice Hall 1995 Memory Floating-Gate Transistor Programming
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Digital Integrated Circuits© Prentice Hall 1995 Memory FLOTOX EEPROM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Flash EEPROM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Cross-sections of NVM cells EPROMFlash Courtesy Intel
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Digital Integrated Circuits© Prentice Hall 1995 Memory Characteristics of State-of-the-art NVM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Read-Write Memories (RAM)
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Digital Integrated Circuits© Prentice Hall 1995 Memory 6-transistor CMOS SRAM Cell
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Digital Integrated Circuits© Prentice Hall 1995 Memory CMOS SRAM Analysis (Write)
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Digital Integrated Circuits© Prentice Hall 1995 Memory CMOS SRAM Analysis (Read)
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Digital Integrated Circuits© Prentice Hall 1995 Memory 6T-SRAM — Layout V DD GND Q Q WL BL M1 M3 M4M2 M5M6
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Digital Integrated Circuits© Prentice Hall 1995 Memory Resistance-load SRAM Cell
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Digital Integrated Circuits© Prentice Hall 1995 Memory 3-Transistor DRAM Cell
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Digital Integrated Circuits© Prentice Hall 1995 Memory 3T-DRAM — Layout BL2BL1GND RWL WWL M3 M2 M1
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Digital Integrated Circuits© Prentice Hall 1995 Memory 1-Transistor DRAM Cell
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Digital Integrated Circuits© Prentice Hall 1995 Memory DRAM Cell Observations
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Digital Integrated Circuits© Prentice Hall 1995 Memory 1-T DRAM Cell
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Digital Integrated Circuits© Prentice Hall 1995 Memory SEM of poly-diffusion capacitor 1T-DRAM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Advanced 1T DRAM Cells Cell Plate Si Capacitor Insulator Storage Node Poly 2nd Field Oxide Refilling Poly Si Substrate Trench Cell Stacked-capacitor Cell Capacitor dielectric layer Cell plate Word line Insulating Layer IsolationTransfer gate Storage electrode
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Digital Integrated Circuits© Prentice Hall 1995 Memory Periphery
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Digital Integrated Circuits© Prentice Hall 1995 Memory Row Decoders Collection of 2 M complex logic gates Organized in regular and dense fashion (N)AND Decoder NOR Decoder
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Digital Integrated Circuits© Prentice Hall 1995 Memory Dynamic Decoders
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Digital Integrated Circuits© Prentice Hall 1995 Memory A NAND decoder using 2-input pre- decoders
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Digital Integrated Circuits© Prentice Hall 1995 Memory 4 input pass-transistor based column decoder
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Digital Integrated Circuits© Prentice Hall 1995 Memory 4-to-1 tree based column decoder
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Digital Integrated Circuits© Prentice Hall 1995 Memory Sense Amplifiers
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Digital Integrated Circuits© Prentice Hall 1995 Memory Differential Sensing - SRAM
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Digital Integrated Circuits© Prentice Hall 1995 Memory Latch-Based Sense Amplifier
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Digital Integrated Circuits© Prentice Hall 1995 Memory Single-to-Differential Conversion
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Digital Integrated Circuits© Prentice Hall 1995 Memory Open bitline architecture
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Digital Integrated Circuits© Prentice Hall 1995 Memory DRAM Read Process with Dummy Cell
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Digital Integrated Circuits© Prentice Hall 1995 Memory Address Transition Detection
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Digital Integrated Circuits© Prentice Hall 1995 Memory Semiconductor Memory Trends Memory Size as a function of time: x 4 every three years
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Digital Integrated Circuits© Prentice Hall 1995 Memory Semiconductor Memory Trends Increasing die size factor 1.5 per generation Combined with reducing cell size factor 2.6 per generation
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Digital Integrated Circuits© Prentice Hall 1995 Memory Semiconductor Memory Trends Technology feature size for different SRAM generations
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