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Nonequilibrium phenomena in strongly correlated electron systems Takashi Oka (U-Tokyo) 11/6/2007 The 21COE International Symposium on the Linear Response Theory, in Commemoration of its 50th Anniversary Collaborators: Ryotaro Arita (RIKEN) Norio Konno (Yokohama National U.) Hideo Aoki (U-Tokyo)
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1.Introduction: Strongly Correlated Electron System, Heisenberg-Euler’s effective Lagrangian 2. Dielectric Breakdown of Mott insulators ( TO, R. Arita & H. Aoki, PRL 91, 066406 (2003)) 3. Dynamics in energy space, non-equilibrium distribution (TO, N. Konno, R. Arita & H. Aoki, PRL 94, 100602 (2005)) 4.Time-dependent DMRG (TO & H. Aoki, PRL 95, 137601 (2005)) 5. Summary Outline Oka & Aoki, to be published in ``Quantum and Semi-classical Percolation & Breakdown“ (Springer)
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Introduction : Strongly correlated electron system Coulomb interaction In some types of materials, the effect of Coulomb interaction is so strong that it changes the properties of the system a lot. Strongly correlated electron system ・ Metal-insulator transition ( Mott transition ) (1949 Mott) Copper oxides, Vanadium oxides, ・ Superconductivity (from 1980 ’ s) Copper oxides (Hi-Tc), organic compounds
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Correlated electrons + non-equilibrium Recent experimental progress: Attaching electrodes to clean films (crystal) and observe the IV-characteristics which reflects correlation effects. Non-linear transport: Non-linear optical response: Hetero-structure: Kishida et. al Nature (2000) Asamitsu et. al Nature (1997), Kumai et. al Science (2000), … Ohtomo et. al Nature (2004) Experimental breakthrough have been made recently excitation in AC fields fine control of layer-by-layer doping
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Basic rules 1. Hopping between lattice sites Fermi statistics: Pauli principle 2. On-site Coulomb interaction > energy U Hubbard Hamiltonian: minimum model of strongly correlated electron system.
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Equilibrium phase transitions Magic filling When the filling takes certain values and, the groundstate tend to show non-trivial orders. n =1 (half-filling) Mott Insulator 1.Insulator: no free carriers 2. Anti-ferromagnetic order: spin-spin interaction due to super- exchange mechanism
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Metal-insulator transition due to doping (equilibrium) carrier = hole n =1 n <1 n >1 hole doped metalelectron doped metal carrier = doubly occupied state (doublon) Mott insulator
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metal-insulator ``transition” in nonequilibrium We consider production of carriers due to DC electric fields doublon-hole pairs Questions: 1. How are the carriers produced? Many-body Landau-Zener transition (cf. Schwinger mechanism in QED) 2. What is the distribution of the non-equilibrium steady state? Quantum random walk, suppression of tunneling
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Electric field correlation Phase transition Collective motion Why it is difficult Two non-perturbative effects Current Non-equilibrium distribution we will see..
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Similar phenomenon: Dielectric breakdown of the vacuum Schwinger mechanism of electron-hole pair production tunneling problem of the ``pair wave function” production rate (Schwinger 1951) threshold( ) behavior
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Dielectric breakdown of Mott insulator Difficulties: In correlated electrons, charge excitation = many-body excitation Q. What is the best quantity to study to understand tunneling in a many-body framework? one body picture is insufficient
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Heisenberg-Euler’s effective Lagrangian In the following, we will calculate this quantity using Heisenberg-Euler’s effective Lagrangian Non-adiabatic extension of the Berry phase theory of polarization introduced by Resta, King-Smith Vanderbilt (Euler-Heisenberg Z.Physik 1936) tunneling rate (per length L)non-linear polarization TO & H. Aoki, PRL 95, 137601 (2005) (1)time-dependent gauge (exact diagonalization) (2)quantum random walk (3)time-independent gauge (td-DMRG) in … position operator
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L: #sites Two gauges for electric fields Time independent gauge Time dependent gauge F=eEa, (a=lattice const.) suited for open boundary condition suited for periodic boundary condition
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energy gap The energy spectrum of the Hubbard model with a fixed flux MetalInsulator Adiabatic many-body energy levels
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non-adiabatic tunneling and dielectric breakdown F < F th
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non-adiabatic tunneling and dielectric breakdown F < F th
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non-adiabatic tunneling and dielectric breakdown F < F th
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non-adiabatic tunneling and dielectric breakdown F < F th insulator metal
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insulator metal same as above non-adiabatic tunneling and dielectric breakdown F < F th F > F th
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metal non-adiabatic tunneling and dielectric breakdown F < F th insulator F > F th same as above
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metal non-adiabatic tunneling and dielectric breakdown F < F th insulator F > F th same as above
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p metal tunneling rate 1-p non-adiabatic tunneling and dielectric breakdown F < F th insulator F > F th same as above
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p 1-p Answer 1: Carriers are produced by many-body LZ transition F: field, Δ : Mott gap, : const. Landau-Zener formula gives the creation rate threshold electric field field strength: F/ 2 ( TO, R. Arita & H. Aoki, PRL 91, 066406 (2003))
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Question 2: What is the property of the distribution? In equilibrium, and see its long time limit. but here, we continue our coherent time-evolution based on
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branching of paths pair production pair annihilation Related physics: multilevel system: M. Wilkinson and M. A. Morgan (2000) spin system: H.De Raedt S. Miyashita K. Saito D. Garcia-Pablos and N. Garcia (1997) destruction of tunneling: P. Hanggi et. al …
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Diffusion in energy space The wave function (distribution) is determined by diffusion in energy space The wave function (distribution) is determined by diffusion in energy space Quantum (random) walk
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Quantum walk – model for energy space diffusion Multiple-LZ transition = 1 dim quantum walk with a boundary = + + = Difference from classical random walk 1.Evolution of wave function 2.Phase interference between paths Review: A. Nayak and A. Vishwanath, quant-ph/0010117
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result: localization-delocalization transition p=0.01p=0.2 p=0.4 electric field δ function core adiabatic evolution ( δfunction ) delocalized statelocalized state phase interference (TO, N. Konno, R. Arita & H. Aoki, PRL 94, 100602 (2005))
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Test by time dependent density matrix renormalization group Time dependent DMRG: M. A. Cazalilla, J. B. Marston (2002) G.Vidal, S.White (2004), A J Daley, C Kollath, U Schollwöck and G Vidal (2004) review: Schollwöck RMP right Block (m dimension) left Block
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Dielectric Breakdown of Mott insulators time evolution of the Hubbard model in strong electric fields Time-dependent DMRG, N=50, U=4, m=150, Half-Filled Hubbard
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time evolution of the Hubbard model in strong electric fields Dielectric Breakdown of Mott insulators
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time evolution of the Hubbard model in strong electric fields Numerical experiments creation > annihilation Time-dependent DMRG, N=50, U=4, m=150, Half-Filled Hubbard
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Pair creation of electron-hole pairs in the time-independent gauge Quantum tunneling to … charge excitation spin excitation
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survival probability of the Hubbard model cf)
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tunneling rate of the Hubbard model fit with dashed line: a is a fitting parameter TO & H. Aoki, PRL 95, 137601 (2005)
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Conclusion Dielectric breakdown of Mott insulators Answers to Questions: 1. How are the carriers produced? Many-body Landau-Zener transition (cf. Schwinger mechanism in QED) 2. What is the distribution of the non-equilibrium steady state? Quantum random walk, suppression of tunneling interesting relation between physical models
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