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Detection plan for STEIN, telescope of the space mission CINEMA 1 August 3td 2011-Diana Renaud
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STEIN has 32 detectors : neutral atoms, electrons ans ions Energy range : 2 – 300 keV (for electrons) FOV Charge particle : 40° x 70° ENA : 20° x 80° Energy resolution : 1 keV Possible to generate precise particle spectra Dectector : Silicon Semiconductor Dectector with thin entrance window Noise performance of IDeF-X : possible to exploit the extremely low capacitance of these detectors Detection plan 2August 3td 2011-Diana Renaud
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Detectors 3August 3td 2011-Diana Renaud
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SSD: reverse-biased silicon diode (p-n junction) Main goal : minimize the diode reverse-leakage current (due to the generation of carriers in the depletion region) Minimization of the noise High quality float-zone refined silicon Interests of ultra-pure SC: large depletion layers low defect concentrations => large lifetimes Gettering layer during process of fabrication Define the size of the detector Fabrication of the detectors Comparison of 2 devices realized with and without the gettering layer 4August 3td 2011-Diana Renaud
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About the fabrication of the detectors Before removing the gettering layer Final structure of the detector 5August 3td 2011-Diana Renaud For flashing detectors: thickness of Al layer is determined by simulation and is about 900 Å
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Electrical tests Probe card Frame to maintain detectors 6August 3td 2011-Diana Renaud
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Capacitance vs bias voltage Upcoming tests Results of THEMIS detectors by measuring the capacitance vs bias voltage we can obtain the voltage at which the detector is fully depleted. In the case of THEMIS detector, it fully depletes by about 28 V. 7August 3td 2011-Diana Renaud
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Impurities concentration measurement We can determine the final concentration by measuring the capacitance and then plotting 1/C² vs bias volatage Upcoming tests 8August 3td 2011-Diana Renaud
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Current vs biased voltage Upcoming tests This characteristic gives the leakage current for each pixel vs bias voltage 9August 3td 2011-Diana Renaud
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Tests with IDeF-X : Characterization of the front-end electronics without detectors to determine the gain and noise vs the peaking time (performance evaluation of the circuit) Simulation of a detector Tests with IDeF-X and detectors : Electrical test Test with sources for the spectroscopy : evaluation of the performances Upcoming test 10August 3td 2011-Diana Renaud
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Further analyze the correlation between the results obtained by spectroscopy and those obtained by measurement noise (without source). Extract the intrinsic resolution of the detector and check that all the noise components are clearly identified. If measurements are perfect, spectral resolution should be a composition of the two individual components : electronic noise and the intrinsic resolution of the detector Suggestions for the interpretation of results (theoretical value) 11August 3td 2011-Diana Renaud
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