1. 指導教授：林志明 老師 研究生：林高慶 學號：s95662002
A 1.8-V MONOLITHIC SIGE HBT POWER AMPLIFIER WITH A NOVEL PROPOSED LINEARIZING BIAS CIRCUIT
Ping-Chun Yeh; Kuei-Cheng Lin; Lee, C.Y.; Hwann-Kaeo Chiou; Circuits and Systems, Proceedings. The 2004 IEEE Asia-Pacific Conference on Volume 1,  6-9 Dec Page(s): vol.1
指導教授：林志明 老師
研究生：林高慶
學號：s

2. Outline Abstract Introduction Linearizer schematics
The schematic diagram of the power amplifier
Performance summary and comparison
Conclusions

3. Abstract Use TSMC 0.18 ㎛ SiGe HBT technology
An output power over 20 dBm with a power-added efficiency higher than 42.4% under 1.8 volt operation for a 2 GHz power amplifier

4. Introduction
With the emergence of SiGe HBTs as a new contender for RF and Microwave applications
The liearizers using adaptive bias circuit were widely used in improving the both linearity and efficiency

5. Linearizer schematics

6. The simulation of shorting capacitor C

7. The simulation of impedance ratio (R1/R2)

8. The schematic diagram of the power amplifier

9. The simulation of the power amplifier

10. Performance summary and comparison

11. Conclusions
The size effect of the impedance ratio are extensively investigated.
A MOSFET junction capacitor to form an additional feedback control is proposed to obtain a significant improvement.