Download presentation
Published byOsborn Jackson Modified over 9 years ago
1
A High-Gain, Low-Noise, +6dBm PA in 90nm CMOS for 60-GHz Radio
Compound Semiconductor IC Symposium A High-Gain, Low-Noise, +6dBm PA in 90nm CMOS for 60-GHz Radio Mehdi Khanpour+, Sorin Voinigescu+, M. T. Yang* +University of Toronto, *TSMC October 2007
2
Outline Motivation 60-GHz Radio PA schematic Fabrication
Measurement results Conclusion October 2007 Mehdi Khanpour
3
Motivation 60-GHz Band (57-64 GHz) CMOS alternative
Large bandwidth and limited propagation High data rate (4+Gbps), short range Personal Area Networks, Wireless HDTV CMOS alternative lower power higher integration and lower cost October 2007 Mehdi Khanpour
4
60-GHz Radio Simple narrow-band radio architecture
Implemented in 90nm CMOS Receiver w/o VCO [1] Up-converter [2] Power Amplifier (this work) October 2007 Mehdi Khanpour
5
PA Schematic Input designed as LNA with inductive feedback
Input matched by LG and LS Output designed as PA with source degeneration for linearity October 2007 Mehdi Khanpour
6
PA Design Stage 1 biased at 0.2 mA/μm and sized for simultaneous noise and input impedance matching Stage 2 and 3 biased at 0.3 mA/μm for linearity Output stage sized for PSAT = 6.5 dBm with Inductive degeneration for linearity Inductors and interconnects modeled using ASITIC October 2007 Mehdi Khanpour
7
Fabrication Fabricated in TSMC 90nm GP CMOS
9-layer Cu back-end, no “thick” metal Large signal test setup: 67GHz Cable 110GHz Cable 67GHz Infinity Probes 50GHz Bias T 300μm× 500μm October 2007 Mehdi Khanpour
8
Simulations 18 dB Gain, 4.5 dB NF
Γopt, S11 and S22 < -10 dB from GHz October 2007 Mehdi Khanpour
9
Measurement vs. Simulation
14 dB Gain, 3dB bandwidth extends from GHz S11 and S22 < -10 dB from GHz October 2007 Mehdi Khanpour
10
Measurement vs. Simulation
Measurement shows 14 dB 55 GHz Diffusion region in layout is wider than the minimum allowed by design kit Extra capacitance pushing the centre frequency down is not captured in simulations October 2007 Mehdi Khanpour
11
Measurement vs. Simulation
S21 peaks at 55 GHz when extra capacitance is added October 2007 Mehdi Khanpour
12
S-Parameters Across 5 Dies
Results show excellent repeatability October 2007 Mehdi Khanpour
13
S21 vs. Power Supply 2 dB drop in gain from 1.5V to 1.2V supply
October 2007 Mehdi Khanpour
14
Linearity Measurement
6 dBm PSAT, 1.6 dBm P1dB Maximum PAE is 55 GHz and 60 GHz, η = 22% October 2007 Mehdi Khanpour
15
Linearity vs. Current Density
Optimal linearity bias coincides with peak fT current density of 0.3~0.35 mA/μm October 2007 Mehdi Khanpour
16
Temperature Measurements
Gain decreases by 5 dB and PSAT by 2 dBm from 25oC to 100oC October 2007 Mehdi Khanpour
17
Scaling Same concept implemented in 65nm at 80 GHz
Third stage is cascode with identical size (40 μm) Higher gain but lower PSAT due to cascode output stage, η = 11% October 2007 Mehdi Khanpour
18
200/290 GHz fT/fMAX SiGe HBT [4] 200/290 GHz fT/fMAX SiGe HBT [5]
PA Comparison PA Technology f G PSAT P1dB,out PAE Area Topology FoM 170 GHz fMAX 90nm CMOS 60 GHz 14 dB 6 dBm 1.6 dBm 6% 0.3×0.5mm2 2-stage cascode + CS 10 170 GHz fMAX 90nm CMOS [3] 5.2 dB 9.3 dBm 6.4 dBm 7.4% 0.35×0.43mm2 3-stage CS 7.5 200/290 GHz fT/fMAX SiGe HBT [4] 10.8dB 16 dBm 11.2 dBm 4.3% 2.1×0.8mm2 2-stage CE 73 200/290 GHz fT/fMAX SiGe HBT [5] 77 GHz 19dB 14 dBm 12 dBm 15.7% NA cascode + 444 October 2007 Mehdi Khanpour
19
Conclusion 60-GHz PA with 14 dB gain demonstrated in 90nm CMOS
PA characterized over process, supply voltage and temperature variation Results show excellent yield and repeatability Scalable to 80 GHz in 65nm CMOS October 2007 Mehdi Khanpour
20
Acknowledgment Jaro Pristupa and CMC for CAD tools and support
OIT and CFI for equipment grants TSMC for facilitating the technology access October 2007 Mehdi Khanpour
21
References [1] D. Alldred et al, CSICS 2006
[2] S. P. Voinigescu et al, ISCAS 2007 [3] T. Yao et al. RFIC-Symp 2006 [4] B. Floyd et al, ISSCC 2004 [5] S. T. Nicolson et al, IMS 2007 October 2007 Mehdi Khanpour
Similar presentations
© 2024 SlidePlayer.com. Inc.
All rights reserved.