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EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 1 1 Chapter 9 Memory Diagnosis and Built-In Self-Repair.

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Presentation on theme: "EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 1 1 Chapter 9 Memory Diagnosis and Built-In Self-Repair."— Presentation transcript:

1 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 1 1 Chapter 9 Memory Diagnosis and Built-In Self-Repair

2 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 2 2 What is this chapter about?  Why diagnostics?  Yield improvement –Repair and/or design/process debugging  BIST design with diagnosis support  MECA: a system for automatic identification of fault site and fault type  Built-in self-repair (BISR) for embedded memories  Redundancy analysis (RA) algorithms  Built-in redundancy analysis (BIRA)

3 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 3 3 How to Identify Faults? RAM Circuit/Layout Tester/BIST Output

4 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 4 4 Fault Model Subtypes

5 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 5 5 March Signature & Dictionary March 11N E0E0 E 1 E 2 E3E3 E 4 E 5 E 6 E 7 E 8 E 9 E 10

6 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 6 6 Memory Error Catch and Analysis (MECA) Source: Wu, et al., ICCAD00

7 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 7 7 BIST with Diagnosis Support Source: Wang, et al., ATS00

8 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 8 8 Test Mode  In Test Mode it runs a fixed algorithm for production test and repair.  Only a few pins need to be controlled, and BGO reports the result (Go/No-Go).

9 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 9 9 CTR State Diagram in Test Mode

10 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 10 10 Fault Analysis Mode (FSI Timing)  In Fault Analysis Mode, we can apply a longer March algorithm for diagnosis  FSI captures the error information of the faulty cells EOP format:

11 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 11 11 CTR State Diagram in Analysis Mode

12 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 12 12 Fault Analysis  Derive analysis equations from the fault dictionary  Convert error maps to fault maps by the equations

13 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 13 13 TPG State Diagram

14 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 14 14 Waveform Generated by TPG

15 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 15 15 Diagnostic Test Algorithm Generation  Start from a base test: generated by TAGS, or user-specified  Generation options reduced to Read insertions  Diagnostic resolution: percentage of faults that can be distinguished

16 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 16 16 Fault Bitmap Examples Idempotent Coupling FaultStuck-at 0

17 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 17 17 Redundancy and Repair  Problem:  We keep shrinking RAM cell size and increasing RAM density and capacity. How do we maintain the yield?  Solutions:  Fabrication –Material, process, equipment, etc.  Design –Device, circuit, etc.  Redundancy and repair –On-line l EDAC (extended Hamming code; product code) –Off-line l Spare rows, columns, blocks, etc.

18 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 18 18 From BIST to BISR BISTBISDBIRABISR BIST: built-in self-test BIECA: built-in error catch & analysis -BISD: built-in self diagnosis -BIRA: built-in redundancy analysis BISR: built-in self-repair

19 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 19 19 RAM Built-In Self-Repair (BISR) RAM MUX BIST Redundancy Analyzer Reconfiguration Mechanism Spare Elements

20 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 20 20 RAM Redundancy Allocation  1-D: spare rows (or columns) only  SRAM  Algorithm: Must-Repair  2-D: spare rows and columns (or blocks)  Local and/or global spares  NP-complete problem  Conventional algorithm: –Must-Repair phase –Final-Repair phase l Repair-Most (greedy) [Tarr et al., 1984] l Fault-Driven (exhaustive, slow) [Day, 1985] l Fault-Line Covering (b&b) [Huang et al., 1990]

21 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 21 21 Redundancy Architectures

22 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 22 22 Redundancy Analysis Simulation Memory Defect Injection Fault Translation Faulty Memory Test Algorithm Simulation RA Simulation RA Algorithm Spare Elements Result Fail bit map and sub-maps Ref: MTDT02

23 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 23 23 Definitions  Faulty line: row or column with at least one faulty cell  A faulty line is covered if all faulty cells in the line are repaired by spare rows and/or columns.  A faulty cell not sharing any row or column with any other faulty cell is an orthogonal faulty cell  r: number of (available) spare rows  c: number of (available) spare columns  F: number of faulty cells in a block  F’:number of orthogonal faulty cells in a block

24 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 24 24 Example Block with Faulty Cells

25 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 25 25 Repair-Most (RM) 1.Run BIST and construct bitmap 2.Construct row and column error counters 3.Run Must-Repair algorithm 4.Run greedy final-repair algorithm

26 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 26 26 Worst-Case Bitmap (After Must-Repair) r=2; c=4 Max F=2rc Max F’=r+c Bitmap size: (rc+c)(cr+r)

27 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 27 27 Essential Spare Pivoting (ESP)  Maintain high repair rate without using a bitmap  Small area overhead  Fault Collection (FC)  Collect and store faulty-cell address using row- pivot and column-pivot registers –If there is a match for row (col) pivot, the pivot is an essential pivot –If there is no match, store the row/col addresses in the pivot registers  If F > r+c, the RAM is irreparable  Spare Allocation (SA)  Use row and column pivots for spare allocation –Spare rows (cols) for essential row (col) pivots  SA for orthogonal faults Ref: Huang et al., IEEE TR, 11/03

28 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 28 28 ESP Example (1,0)(1,6) (2,4)(3,4)(5,1)(5,2)(7,3)

29 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 29 29 Cell Fault Size Distribution Mixed Poisson-exponential distribution

30 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 30 30 Repair Rate (r=10)

31 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 31 31 SCG0SCG1 Redundancy Organization SEG0 SEG1 SR: Spare Row; SCG: Spare Column Group; SEG: Segment SR0 SR1 ITC03

32 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 32 32 Main Memory Spare Memory BIRA BIST Wrapper Q D A BISR Architecture MAO POR MAO: mask address output; POR: power-on reset Ref: ITC03

33 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 33 33 Power-On BISR Procedure

34 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 34 34  Subword  A subword is consecutive bits of a word.  Its length is the same as the group size.  Example: a 32x16 RAM with 3-bit row address and 2-bit column address Subword Definition A word with 4 subwords A subword with 4 bits

35 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 35 35  To reduce the complexity, we use two row-repair rules  If a row has multiple faulty, we repair the faulty row by a spare row if available.  If there are multiple faulty subwords with the same column address and different row addresses within a segment, the last detected faulty subword should be repaired with an available spare row.  Examples: Row-Repair Rules subword

36 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 36 36 BIRA Procedure

37 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 37 37 Basic BIST Module

38 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 38 38 BIRA Module

39 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 39 39 State Diagram of PE

40 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 40 40 Block Diagram of ARU

41 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 41 41 Repair Rate Analysis  Repair rate  The ratio of the number of repaired memories to the number of defective memories  A simulator has been implemented to estimate the repair rate of the proposed BISR scheme [Huang et al., MTDT02]  Industrial case:  SRAM size: 8Kx64  # of injected random faults: 1~10  # of memory samples: 534  RA algorithms: proposed and exhaustive search algorithms

42 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 42 42 An Industrial Case

43 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 43 43 Redundancy: 4 spare rows and 2 spare column groups Group size: 4 A 8Kx64 Repairable SRAM Technology: 0.25um SRAM area: 6.5 mm 2 BISR area : 0.3 mm 2 Spare area : 0.3 mm 2 HO spare : 4.6% HO bisr : 4.6% Repair rate: 100% (if # random faults is no more than 10)

44 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 44 44 Waveform of EMA & MAO

45 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 45 45 Normal Mode Waveform

46 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 46 46 Repair Rate (Group Size 2)

47 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 47 47 Repair Rate (Group Size 4)

48 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 48 48 Yield vs. Repair Rate

49 EE141 VLSI Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 49 49 Concluding Remarks  BIST with diagnosis support  Fault type identification done by an offline diagnosis process using MECA  RAM design and process debugging for yield enhancement  From BIST to BIRA  Effective implementation by ESP –Greedy algorithm  An industrial case has been experimented  Full repair achieved (for # random faults no more than 10)  Only 4.6% area overhead for the 8Kx64 SRAM

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