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QIC 890/891: A tutorial on Nanowires in Quantum Information Processing QIC 890/891: A tutorial on Nanowires in Quantum Information Processing Daryoush.

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Presentation on theme: "QIC 890/891: A tutorial on Nanowires in Quantum Information Processing QIC 890/891: A tutorial on Nanowires in Quantum Information Processing Daryoush."— Presentation transcript:

1 QIC 890/891: A tutorial on Nanowires in Quantum Information Processing QIC 890/891: A tutorial on Nanowires in Quantum Information Processing Daryoush Shiri, Institute for Quantum Computing (IQC) Daryoush Shiri, Institute for Quantum Computing (IQC) July 21, 23, 28 and 30, 2014 1

2 Agend a Introduction Introduction A crash course on A crash course on Electronic structure calculation Phonon spectrum Electron-phonon scattering Spin-Orbit Interaction Spin-Orbit Interaction Rashba term Dresselhaus term Exchange Interaction Exchange Interaction Spin relaxation mechanisms Spin relaxation mechanisms Dyakonov - Perel Elliot - Yafet Hyperfine interaction Daryoush Shiri, IQC2

3 Introduction 3 Electron spin is a natural choice for a Qubit. Spin of electrons in Quantum Dots (QD). QDs are defined by potential landscaping on 2DEG. 2DEG  bandgap engineering in a superlattice. Electric Field (spin-orbit interaction) Spin to charge conversion ESR

4 Nanowires & QIP 4 Semiconducting nanowires A Host for embedding interacting Quantum Dots Topology-based Q-Computing: Hunt for Majorana Fermions Emitters of single photon, entangled photons G. Weihs & H. Majedi, et al. J. Baugh, IQC L. Kouwenhoven, Delft

5 Superconducting nanowires Detection of single photon (SNPD) NIST See courses offered by: Sir. Anthony Leggett and other faculty members at IQC and Physics on superconductivity

6 Why nanowires? 6 Compatibility with mainstream electronic chip industry As opposed to 2DEG based Qdot systems:  Scalability of Qubits Embedding many Qdots (spin qubits) Better electrostatic control (potential landscape) using many gates Bandgap engineering Fabrication methods (2) Top-down methods Group III-V (InP, InAs, InSb, GaAs, GaP, AlGaN,….) Group V (Si/Ge) Group II-VI (ZnSe/ZnTe) (1) Bottom-up methods e.g. VLS Review article by: J. Ramanujam, D. Shiri, and A. Verma Mater. Express 1, 105-126 (2011).

7 Materials of Choice 7 http://www.ioffe.rssi.ru/SVA/NSM/Semicond/ InAs InSb m*/m 0 = 0.023 µe = 10,000 ~ 30,000 cm 2 /V.s @ base temp (100mK) Lande’ g-factor = 10 λ MFP ~ 300nm m*/m 0 = 0.014 µe = 10,000 ~ 30,000 @ base temp (100mK) Lande’ g-factor = 50 J. Baugh, IQC InSb Core-Shell Tandem

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