1. 8GHz, lV, High Linearity, Low Power CMOS Active Mixer Farsheed Mahrnoudi and C. Andre T. Salama The Edward S. Rogers Sr. Department of Electrical & Computer Engineering University of Toronto 指導教授 : 林志明 級別 : 體積所碩一 學生 : 呂致遠 Mail:s94662010@mail.ncue.edu.tw 民國 95 年 3 月 28 日

2. Outline Abstract Introduction Propose Schematic Microphotograph Experimental result Characteristics Conclusion References

3. Abstract 8-GHz high linearity current commutating CMOS RF mixer Novel RF transcondoctor stage Bias-offset technique. 0.18um CMOS technology and operating at 1V power supply Simplicity of design and satisfying potential requirements for 4G mobile communication systems

4. Introduction 4G targets a data rate of 100 Mbps High RF front-end linearity Integrated active mixers Improve the linearity of RF transcondnctors based on harmonic tuned multiple gate transistors Bias-offset technique demonstrated good linearity while maintaining design simplicity. 1V power supply, High linearity in 4G

5. Propose An appropriate value of gate voltage biasing offset of the input transconductor transistors (Voffset=750 rnV in this case) results in a constant transconductance over a relatively wide range of input differential voltages which in turn translates into excellent linearity performance for the mixer.

6. Schematic Low-pass load to eliminate any undesirable high frequency content in The output signal Resonators instead of the conventiona l current sources to enable low- voltage operation C1 provides a feed-forward Ac-coupled Gilbert circuit improve the NF MI and M2, or M3and M4 using Voffset compensate non- linearity M5, M6, M7 and M8. adjustment of the bias offset

7. Microphotograph

8. Experimental result(IIP3)

9. Experimental result(P-1dB)

10. Experimental result(NF)

11. Characteristics

12. Conclusion Bias-offset technique Low operating supply voltage High linearity Good isolation IIP3 and NF are better 4G mobile communication systems

13. References [1] Y. Mochida, T. Takano, H. Gambe, ‘*Future Directions and Technology Requirements of Wireless Communications:’ IEEE lnrernarional Elecrron Devices Meerine (IEDMJ. Technical I. Digest,pp. 1.3.1 - 1.3.8, 2001. [2] R. C. Sagers, “Intercept Point and Undesired Responses:’ IEEE Transactions on Vehicular Technology, Vol. 32, pp. 121 - 12% t 0 P f a.,., 1,”_1. [3] Q. Li, 1. Zhang, W. Li and J. S. Yuan, “CMOS RF Mixer Non-Linearity Design:’ IEEE 43d Midwest symposium on Circuits and Sysrems, Proceedings, pp. 808 - 81 I, 2001. [4] Youngwook Kim, Youngsik Kim and S. Lee, “Linearized Mixer Using Predistortion Technique:’ IEEE Microwave and Wireless Componenrs Lerrers, Vol. 12, pp. 204 - 205,200’2. [5] T. W. Kim, B. Kim and K. Lee, “Highly Linear RF CMOS Amplifier and Mixer Adopting MOSFET Transconductance Linearization by Multiple Gated Transistors:’ IEEE Radio Frequency lnregrared Circuits Symposium, Proceedings, pp. 107-1 10,2003.

14. References [6] Z. Wang and W. Guggenbuhl, “A VoltageControllable Linear MOS Transconductor Using Bias Offset Technique,” IEEE Journal of Solid-Srare Circuits, Vol. 25, pp. 315 - 317, 1990. [7] E Mahmoudi and C.A.T. Salama, US Parenr, Applied for. 2003. [8] M. SteyaerI, “Single Chip CMOS RF Transceivers: Wishful Thinking or Reality:’ IEE Seminar on Low Power lntegrared Circuir Design, Proceedings, pp. 1/1 - 1/6, 2001. [9]I T. Manku, ‘Low Voltage Topology for Radio Frequency Circuit Design:’ US-Parenr 6,232,848 (2M)I) [IO] A. N. Karanicolas, “A 2.7V 900 MHz CMOS LNA and Mixer:‘lEEE Journal ofSolid-Stare Cirruirs. Vol. 31. DD. 1939... - 1944,1996. [Il] M. Lefevre and P. Okrah, “Making the Leap lo 4G Wireless,” EE 7imes Nehvork. Communication Sysrem Design, July 2001. 404

15. Q&A THANK YOU FOR LISTENING