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Low Power – High Speed MCML Circuits (II)
Shahnam Khabiri 95.575 March, 2002
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Outline: Introduction CSL and MCML operation
CMOS, MCML, CML, ECL comparison DyCML Feedback MCML Adaptive pipeline system for MCML Conclusion References
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Introduction VLSI development goals: - Large integration density
High speed operation Low power dissipation Low cost
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Introduction … Why CMOS: Why not CMOS: - High packing densities
High noise margin Simplicity No static power dissipation Yield Low cost, … Switching noise in mixed mode ASIC’s f P Vdd P , but Delay , …
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Current Steering Logic (CSL)
Advantage: Reduced power supply current noise Disadvantage: Additional output branch for each fanout Static power dissipation Frequency proportional dynamic power dissipation
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MCML Operation Rise time depends on RL (RFP voltage)
Fall time depends on I (RFN voltage) NMOS current source has longer L to provide high ro Less sensitivity to noise margin and gain, therefore : gain could be set to 1.4 and Vswing set to 300mv
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MCML Logic Gates
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CMOS, MCML, CML, ECL CMOS MCML CML ECL Delay C.Vdd/[K(Vdd-VT)2] C.V/I
CMOS MCML CML ECL Delay C.Vdd/[K(Vdd-VT)2] C.V/I <Tcml Power C(Vdd)2.f Vdd.I >Pcml Vms VT = 0.6 v (I/K)0.5+VT = 0.9 v 2VBE+VSC = 1.8 v 3VBE+VSC = 2.6 v
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CMOS, MCML, CML, ECL …
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Simulated results for an MCML F.A.
MCML Full Adder in 0.5um Vdd = 1.2 v delay = 200ps CMOS: Vdd = 3.3 v, delay = 600ps Vdd = 1.5 v, delay = 2ns
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Experimental results for an MCML F.F
0.5 um cmos, f = 1.8 GHz Delay between clock edge and output = 160ps
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DyCML Advantage: Vswing.CL = WC1.LC1.Cox.(Vdd-Vswing) C1 size
Dynamic current source No static power dissipation More stability in compare with other dynamic circuits Supply voltage is as low as Vtn+|Vtp|
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DyCML … Cascading: 1- Clock Delay mechanism (CD) less stability
2- Self Timing scheme (ST) higher delay and power consumption
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Simulation results for DyCML
Using 0.6 um CMOS Vdd = 3.3 v, f = 100MHz DyCML more suitable for complex gates ST is slower than CD and consumes more power
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Feedback MCML Effect of Vth fluctuation: Vth fluctuation is due to:
Fluctuation of gate oxide thickness Fluctuation of gate length Random placement of the channel dopant VB = G(0).Vth G(0) VB
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Feedback MCML … If GC(fmax) = GF(fmax) GF(0) < GC(0)
VB is smaller More tolerance for several GHz - LMF1 and LMF2 are larger than minimum
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Feedback MCML 1:2 Demux and simulation results:
Feedback MCML tolerates two times more Vth fluctuation in compare with conventional MCML Experimental results show 10 Gb/s Mux, Demux 1:8 in 0.18um use ¼ power of GaAs or Si bipolar and faster than CMOS. Feedback MCML Latch implementation
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MCML Optimization in Mixed Signal Applications …
Voltage Swing Control (VSC): VSC allows fixed voltage swing across variety of currents and easy trade off speed for power Drawbacks: Power and area overhead different gates won’t track Vlow exactly so hard to share VSC
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Adaptive pipeline system for MCML
Current Source Controller: RFN and consequently I will be set based on critical path delay requirements Circuit timing insensitive to process, temperature and voltage variation. Design for nominal delay and not the worst case delay
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Full Adder in MCML We can use Current scaling to increase Carry speed
For small number of bits <16 bits CLA is not a great help
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Experimental Results:
Using 0.25 CMOS process for a 12 bits CORDIC Full Adder Power results of MCML are up to 1.5 times less than CMOS CORDIC’s with similar propagation
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Conclusion MCML advantages: High speed:
Tcmos > Tmcml > Tcml > Tecl NMOS devices, Low voltage swing, All ON Transistors Low power consumption @500MHz with applicable Vdd’s: Pcmos > Pecl > Pcml > Pmcml Flexible to construct any logic circuit High speed compact circuits are feasible P is constant with increasing f (good for high speed applications) Fixed power supply current (good for mixed signal ASIC’s) Vdd P , No effect on Delay
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Conclusion … MCML advantages: Small Vswing reduces cross talk
Common noise rejection capability MOS related advantages: good yield, small area, low cost, low supply voltage No theoretical minimum for E.D For a linear chain of N identical MCML gates: E.D = N3.C2.Vdd.V2/I I E.D Flexibility in design optimization: Vswing, I, Vdd, Transistor sizes
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Conclusion … MCML disadvantages:
VT deviation impact on functionality and delay Static power Not suitable for power down mode systems Large load resistors need large area Matching of rise and fall delays Shallow depth logic is a limit for MCML
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References: Yamashina, Yamada,”An MOS Current Mode Logic Circuit for Low Power GHz Processors”, NEC Res & Dev, 1995. J.Rabaey, J.M.Musicer,”MOS current mode logic for low power, low noise CORDIC computation in mixed signal environment”, 2000. A.Tanabe,”0.18 u CMOS 10 Gb/s Multiplexer/Demultiplexer Ics using current mode logic with tolerance to Threshold Voltage fluctuation”,IEEE J. Solid State Circuits, Vol36, No 6, June 2001. M.W.Allam, M.I.Elmasry,”Dynamic current mode logic: a new low power high performance logic style”,IEEE J. Solid State Circuits, Vol36, No 3, March 2001. D.J.Allostot,”Current mode logic techniques for CMOS mixed-mode ASIC’s”,IEEE Custom Integrated Circuits Conf., 1991.
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