1. “Mixed Signal VLSI DESIGN: Basics of CMOS Analog, Digital and RF Circuits”
Arun N. Chandorkar
Department of Electrical Engineering
Indian Institute of Technology, Bombay
Powai, Mumbai ,India
16th March 2009

2. Mixed Signal Basics OUTLINE: 1.Technology 2. Analog Design issues
3. Digital Design Blocks
4. RF design issues
5. Components
6. Conclusion

3. “Mixed Signal VLSI DESIGN” Basics of CMOS Technology
16th March 2009

4. CMOS Process sequence for Mixed Signal Circuits
Reference: CMOS Mixed Signal Design : R.J.Baker

5. CMOS Process sequence for Mixed Signal Circuits
Reference: CMOS Mixed Signal Design : R.J.Baker

6. “Mixed Signal VLSI DESIGN” Basics of CMOS Analog Circuits”
16th March 2009

29. “Mixed Signal VLSI DESIGN: Basics Blocks of CMOS Digital Circuits”

30. Reference: CMOS Mixed Signal Design : R.J.Baker

52. “Mixed Signal VLSI DESIGN” Basics of CMOS RF Circuits
16th March 2009

53. RF VLSI Design: Issues and Applications

55. RF Systems for VLSI Design
Global System for Mobile communications (GSM: originally from Groupe Spécial Mobile) is the most popular standard for mobile phones in the world.
GSM is a cellular network, which means that mobile phones connect to it by searching for cells in the immediate vicinity. GSM networks operate in four different frequency ranges. Most GSM networks operate in the 900 MHz or 1800 MHz bands. Some countries in the Americas (including Canada and the United States) use the 850 MHz and 1900 MHz bands because the 900 and 1800 MHz frequency bands were already allocated.
The rarer 400 and 450 MHz frequency bands are assigned in some countries, notably Scandinavia, where these frequencies were previously used for first-generation systems.
In the 900 MHz band the uplink frequency band is 890–915 MHz, and the downlink frequency band is 935–960 MHz. This 25 MHz bandwidth is subdivided into 124 carrier frequency channels, each spaced 200 kHz apart. Time division multiplexing is used to allow eight full-rate or sixteen half-rate speech channels per radio frequency channel. There are eight radio timeslots (giving eight burst periods) grouped into what is called a TDMA frame. Half rate channels use alternate frames in the same timeslot. The channel data rate is  kbit/s, and the frame duration is 4.615 ms.

56. RF Systems ( Continued)
Code division multiple access (CDMA) is a channel access method utilized by various radio communication technologies.
W-CDMA (Wideband Code Division Multiple Access) is a type of 3G cellular network. W-CDMA is the higher speed transmission protocol used in the UMTS system.
Universal Mobile Telecommunications System (UMTS) is one of the third-generation (3G) cell phone technologies. Currently, the most common form uses W-CDMA .
Wi-Fi is a Wireless technology brand owned by the Wi-Fi Alliance intended to improve the interoperability of wireless.
WiMAX, the Worldwide Interoperability for Microwave Access, is a telecommunications technology aimed at providing wireless data over long distances in a variety of ways, from point-to-point links to full mobile cellular type access. It is based on the IEEE standard, which is also called WirelessMAN..
A wireless LAN or WLAN is a wireless local area network, which is the linking of two or more computers without using wires. WLAN utilizes spread-spectrum or OFDM modulation technology
DCS Digital Cellular System 1800MHz. Digital Cellular System 1800MHz is a term given to what is now known as GSM1800

58. RF Design Issues Linearity Dynamic Range and Power Distortion Noise
Impedance matching
Modeling of devices at RF frequencies
Temperature dependence
Modeling of passive components
Matching between the components
Power consumption
High frequency figure of merit, fT should be at least five times higher than the operating frequency

59. RF Design Hexagon

62. Large Signal Issues ( Cont.)

74. “Mixed Signal VLSI DESIGN” Basics Circuit Components in CMOS Technology
16th March 2009

75. Low Frequency C-V of MOS capacitor
Reference: CMOS Mixed Signal Design : R.J.Baker

76. Floating MOS Capacitor
Reference: CMOS Mixed Signal Design : R.J.Baker

77. Reference: CMOS Mixed Signal Design : R.J.Baker

78. Reference: CMOS Mixed Signal Design : R.J.Baker

79. Reference: CMOS Mixed Signal Design : R.J.Baker

80. Resistors Realization in CMOS Technology

81. Spiral Segment of Inductor on Si

82. Inductors in MOS Technology
The self-inductance for a straight conductor is
L = [ ln { 2l /GMD} (AMD/l) + (m/4) T ]
Where L is the self-inductance in micro henries, l is the conductor length in cm, GMD and AMD represent the geometric and arithmetic mean distance, respectively,
of the conductor cross section, m is the conductor permeability, and T is the frequency correction parameter.
The geometric mean distance (GMD) between two conductors is the distance between two infinitely thin imaginary filaments whose mutual inductance is equal to the mutual inductance between the two original conductors .
The GMD is equal to times a side in the case of a square cross section.
The arithmetic mean distance (AMD) is the average of all the distances between the points of one conductor and the points of another. For a single conductor, the arithmetic mean distance is the average of all possible distances within the cross section.

83. Variation in Frequency-Correction Parameter T
Table.1
Thin Films and Microwave Frequencies.
Value of T Film Thickness Frequency
A gigahertz
mm gigahertz
mm gigahertz

84. Inductance of spiral M = 2 l Q where LT = L0 + M + + M –
Q=ln[(1/GMD) + sqrt {1+ (l2 / GMD2)}]
– sqrt { 1+ (GMD2 / l2) } + (GMD/l)
Total Inductance is then given by:
LT = L0 + M + + M –
where L0 is the sum of the self-inductances of all straight segments,
M + is the sum of the positive mutual inductances and
M – is the sum of th negative mutual inductances

85. Spiral Inductor

86. Physical Inductor Model

87. Mutual inductance Zin = j w w (L+M) which means the inductance
of the conductor increases by M,
and M is the mutual inductance
between the two conductors.
So, parallel currents traveling in phase’
can contribute positive
mutual components of inductance.
Thus the inductance of a conductor
can be expressed as,
L = Lself ± M
M = 2 l Q
where
Q=ln[(1/GMD) + sqrt {1+ (l2 / GMD2)}] – sqrt { 1+ (GMD2 / l2 } + (GMD/l)
LT = L0 + M + + M -

88. Layout of Spiral inductor and probe pads for measurement.

90. RF inductor issues

100. Acknowledgements TO My Graduate students of last 10 Years,
Who did their Projects
With me in Analog, Digital and RF Designs
&
Also those who participated in my courses in
“Digital VLSI Design”, “Analog VLSI Design”
VLSI technology, RF VLSI and System Design.
Thanks to authors who put their work on
Many Websites and they are as referred in the PPTs

101. Thank-you