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Fluctuations and Noise (SPIE) 5/28/041 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental results of gain fluctuations and.

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Presentation on theme: "Fluctuations and Noise (SPIE) 5/28/041 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental results of gain fluctuations and."— Presentation transcript:

1 Fluctuations and Noise (SPIE) 5/28/041 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental results of gain fluctuations and noise in microwave low-noise cryogenic amplifiers Juan Daniel Gallego, Isaac López-Fernández,Carmen Diez, Alberto Barcia Centro Astronómico de Yebes Observatorio Astronómico Nacional Apartado 148, 19080 Guadalajara, SPAIN

2 Fluctuations and Noise (SPIE) 5/28/042 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Contents n Introduction n Noise Measurements n Gain Fluctuation Measurements n Experimental data and results l Device Technology l Temperature l Statistical Analysis l Bias conditions n Conclusions

3 Fluctuations and Noise (SPIE) 5/28/043 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Introduction: Cryogenic Amplifiers n Cryogenic Receivers: l Space communications l Radioastronomy n 60s:Maser, Parametric (18 K @ 8.45 GHz in 1964, JPL) n 70s:GaAs FET amplifiers (13 K @ 1.3 GHz in 1979, NRAO) n 80s:GaAs HEMTs ( 5.5 K ! @ 8.5 GHz in 1988, GE-NRAO) n 90s:InP HEMTs (4.6 K @ 8.5 GHz in 1999, ETH-CAY) (3.0 K @ 8.5 GHz in 2002, TRW-CAY) (2.0 K ! @ 4-8 GHz in 2002, TRW- CAY) n Higher frequencies: SIS, HEBs

4 Fluctuations and Noise (SPIE) 5/28/044 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Interstage matching circuits MICROTECH DC connector SMA connector Bias cavity with biasing circuits Transistor area detail. See source inductive feedback and drain resistive loading ETH transistor with bonding wires 1 23 Input matching circuitOutput matching circuit

5 Fluctuations and Noise (SPIE) 5/28/045 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Introduction: Transistor characterization n Cryogenic S parameter measurements to model devices è In-house test fixture with microstrip lines to allow two-tier TRL calibration è Device measured with bonding wires è DC and coldFET complete the small signal model n Noise model according to Pospieszalski è The noise measured in a wide band test amplifier sets the T D of the model

6 Fluctuations and Noise (SPIE) 5/28/046 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) EXAMPLE OF CRYOGENIC S PARAMETERS (1 – 40 GHz) MODEL Circuit model MEAS Raw data MEASG Time domain filter

7 Fluctuations and Noise (SPIE) 5/28/047 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Introduction: Radiometer Sensitivity n Radiometer model n Radiometer sensitivity n Radiometer

8 Fluctuations and Noise (SPIE) 5/28/048 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Introduction: Gain Fluctuations

9 Fluctuations and Noise (SPIE) 5/28/049 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Introduction: Specs of Gain Fluctuations n HERSCHEL: l Far Infrared and Submillimeter 3.5 m Telescope orbiting in L2 with 3 cryogenic instruments l HIFI: Heterodyne Instrument for the Far Infrared with 7 dual polarization submillimeter SIS and HEB receivers l Our contribution: low noise, wide band 4-8 GHz cryogenic IF preamplifiers l Sensitive parameters: è Gain fluctuations: impact in the chopping frequency n ALMA: l Atacama Large Millimeter Array (USA, Europe, Japan), 64 Antennas, 35-850 GHz l Our contribution: 4-8, 4-12 GHz cryogenic IF preamplifiers

10 Fluctuations and Noise (SPIE) 5/28/0410 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Introduction: Gain Fluctuations dependence n Improvements in Noise l Shorter gate length l HEMTs l InP substrate l Cryogenic Temperature n Improvements in Gain Stability l Larger gate area l Non HEMT l GaAs substrate l Ambient Temperature n Conclusion: l Advances in the reduction of Noise Temperature have contributed to increase Gain Fluctuations

11 Fluctuations and Noise (SPIE) 5/28/0411 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Noise Measurements (1) n Room temperature methods: l Hot/cold loads l Diode noise sources n Cryogenic temperature methods: l Hot/cold loads l Diode noise sources l Variable temperature cryogenic load l Diode noise source and cold attenuator

12 Fluctuations and Noise (SPIE) 5/28/0412 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Noise Measurements (2) Cold Attenuator Method

13 Fluctuations and Noise (SPIE) 5/28/0413 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Noise Measurements (3) n Cold Attenuator Method: l Advantages: è Reduces the error caused by transitions è Minimizes sensitivity to changes in reflection of noise source è Allows fast sweep measurements in automatic systems è Takes advantage of features of existent Noise Figure Meters l Disadvantages: è Needs careful calibration of noise source, lines, attenuator n Accuracy: l Repeatability: ± 0.2 K l Absolute Accuracy:± 1.4 K

14 Fluctuations and Noise (SPIE) 5/28/0414 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Noise Measurements (4) Error Budget in Cryogenic Measurements (f=8 GHz, T N =4 K, G=30 dB) SOURCE OF ERRORCONTRIBUTION Calibration of Noise Source 0.77 K Calibration of cold attenuator 0.54 K Calibration of temperature sensor 1.00 K All other 0.34 K _______________________________________________________ TOTAL (RSS)±1.40 K

15 Fluctuations and Noise (SPIE) 5/28/0415 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Gain Fluctuation Measurements (1) n Origins l External è Power supply è Temperature variations è Microphonics l Internal è Intrinsic to the devices n Typical Spectrum

16 Fluctuations and Noise (SPIE) 5/28/0416 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Gain Fluctuation Measurements (2)

17 Fluctuations and Noise (SPIE) 5/28/0417 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Gain Fluctuation Measurements (3)

18 Fluctuations and Noise (SPIE) 5/28/0418 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Gain Fluctuation Measurements (4)

19 Fluctuations and Noise (SPIE) 5/28/0419 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Parameters with impact in noise and fluctuations n Frequency band n Device technology l Semiconductor material: InP vs GaAs l Passivation: è Better noise results with unpassivated devices l Gate geometry: è Gain fluctuations improve with larger gate area n Operating temperature n Illumination: è Necessary to avoid carrier freezing effect in old devices, nowadays noise temperature is immune or improves with light in InP devices è Gain fluctuations worsen with illumination

20 Fluctuations and Noise (SPIE) 5/28/0420 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Frequency band n Noise temperature decreases with frequency: T N [K] ~ ½ f [GHz] n Low frequency gain fluctuations are insensitive to frequency band  Results of table are contaminated by other parameters (bias, device type)

21 Fluctuations and Noise (SPIE) 5/28/0421 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Device technology and Temperature (1) TRW T-42 CRYO3  200×0.1 μm gate TRW T-45 CRYO4  200×0.1 μm gate  Used in DMs  Space qualifiable, to be used in FMs  CHOP developed ETH T-35  200×0.2 μm gate  Experimental transistor  Design by request  Used in MPAs 0.22 mm 0.2 mm

22 Fluctuations and Noise (SPIE) 5/28/0422 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Device Technology and Temperature (2)

23 Fluctuations and Noise (SPIE) 5/28/0423 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Statistical Analysis: Results of long series (1) n Analyzed two series of 9 and 10 state-of-the-art 4-8 GHz cryogenic amplifiers designed and built at CAY with microstrip hybrid technology: l Development models for Herschel space telescope (all cryogenic LNAs for HIFI) è 2 stages of InP NGST transistors è Design constrained by space qualification l Pre-production phase of ALMA (cryogenic LNAs for the European contribution) è 3 stages of InP NGST and ETH transistors. è Based on HIFI design, with more degrees of freedom

24 Fluctuations and Noise (SPIE) 5/28/0424 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Statistical Analysis: Results of long series (2)

25 Fluctuations and Noise (SPIE) 5/28/0425 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Statistical Analysis: Results of long series (3) n Mean values of noise and fluctuations are similar in both series n Excellent repeatability in noise and gain n Greater dispersion of gain fluctuations results (value @ 1 Hz and spectral index) n HIFI dispersion in fluctuations significantly wider than ALMA l Bias conditions homogeneous for both series l Different transistor batch used for each series of amplifiers  Some transistor batches exhibit high scattering of gain fluctuations within devices of the same batch not shown in noise results  Observed also a significant batch to batch variation

26 Fluctuations and Noise (SPIE) 5/28/0426 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Bias Conditions (1) n Tested the variation of gain fluctuations and noise with Vd, Id o Found a steep change in gain fluctuations around 0.4-0.5 V o Noise (and gain) are much more insensitive to bias changes o High fluctuation zones could be avoided with no penalty in noise or gain l Gain fluctuations  when Id 

27 Fluctuations and Noise (SPIE) 5/28/0427 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Experimental data and results Bias conditions (2) n Tested also fluctuations of gate voltage with HP35670A  Found similar bias dependence n Simple measurements of voltage fluctuations may help detecting sensitive bias regions n Correlation with gain fluctuations for different devices useful for pre-selecting least fluctuating devices from a batch 10 Hz 1 Hz

28 Fluctuations and Noise (SPIE) 5/28/0428 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) Conclusions n The reduction in noise and the increase in bandwidth of modern cryogenic amplifiers have made more prominent the problem of gain fluctuations n The reduction of gain fluctuations is possible with an adequate selection of devices and bias n Lack of theoretical model for gain fluctuations of cryogenic amplifiers

29 Fluctuations and Noise (SPIE) 5/28/0429 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) END

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