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Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004.

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Presentation on theme: "Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004."— Presentation transcript:

1 Introduction to CMOS VLSI Design Lecture 5: Logical Effort GRECO-CIn-UFPE Harvey Mudd College Spring 2004

2 CMOS VLSI Design5: Logical EffortSlide 2 Outline  Introduction  Delay in a Logic Gate  Multistage Logic Networks  Choosing the Best Number of Stages  Example  Summary

3 CMOS VLSI Design5: Logical EffortSlide 3 Introduction  Chip designers face a bewildering array of choices –What is the best circuit topology for a function? –How many stages of logic give least delay? –How wide should the transistors be?  Logical effort is a method to make these decisions –Uses a simple model of delay –Allows back-of-the-envelope calculations –Helps make rapid comparisons between alternatives –Emphasizes remarkable symmetries

4 CMOS VLSI Design Logic effort  The method of Logical effort is a easy way to estimate delay in a CMOS circuit. –We can select the fastest candidate by comparing delay estimates of different logic structures. –The method can specify the proper number of logic stages. –The method allows a early evaluation of the design and provides a good starting point for further optimizations. 5: Logical EffortSlide 4

5 CMOS VLSI Design5: Logical EffortSlide 5 Chip design flow

6 CMOS VLSI Design Technology dependency Design levels IBM Technology dependence Technology independency

7 CMOS VLSI Design Circuit design styles 5: Logical EffortSlide 7  Custom design  Automatic design

8 CMOS VLSI Design5: Logical EffortSlide 8 Custom design flow  Additional human labor for better performance - Designer has the flexibility to create cells at a transistor level -Or choose from a library of predefined cells. -Which technology? -Static CMOS -Transmission gate -Domino circuit -Any other logic family -Which topology? -NAND, NOR, INV or complex gates -Size transistors of the logic gates

9 CMOS VLSI Design5: Logical EffortSlide 9 Automatic design flow  This method uses synthesis tools to choose circuit topologies and gate sizes. -Synthesis takes much less time than manually optimizing paths and drawing schematics, but is generally restricted to a fixed library of static CMOS cell. -In general this method produces slower circuits than designed by a skilled designer. -Synthesized circuits are normally logically correct by construction, but timing verification is still necessary. -Performance can be improved by setting directives for synthesis tool in order to solve critical paths delay.

10 CMOS VLSI Design layout process IBM

11 CMOS VLSI Design Layout process IBM RC = Resistance CAP = Capacitance SDF = Standard Delay File LVS DRC Antenna Simulate and tweak Making changes in a circuit, throwing it into the simulator, looking at the result, making more changes, and repeating the process.

12 CMOS VLSI Design Delay estimate 5: Logical EffortSlide 12  The target her is design of fast chips. -Use a systematic approach to topology selection and gate sizing; - A simple delay model that’s fast and easy to use. - The delay model should be accurate enough that if it predicts circuit a is significantly faster than circuit b, then circuit a really is faster.  Delay model - Complexity of the gate; - the load capacitance; - parasitic capacitance.

13 CMOS VLSI Design Delay model 5: Logical EffortSlide 13  The delay model introduces a numeric “path effort” that allows the designer to compare two multistage topologies easily without sizing or simulation.  The model allows choosing the best number of stages of gates and for selecting each gate size in order to minimize delay.

14 CMOS VLSI Design Delay in a gate 5: Logical EffortSlide 14  The model describes delays caused by the capacitive load that the logic gate drives and by the topology of the logic gate.  Clearly, as the load increases, the delay increases, but delay also depends on the logic function of the gate. Slide 14 2 2 1 1 Inverters, the simplest logic gates, drive loads best and are often used as amplifiers to drive large capacitances.

15 CMOS VLSI Design5: Logical EffortSlide 15 Logic gates that compute other functions require more transistors, some of which are connected in series, making them poorer than inverters at driving current. Delay in logic gates A NAND gate has more delay than a inverter with similar transistor sizes that drives the same load. A 2-input NAND gate

16 CMOS VLSI Design  To model the delay if a logic gate –Firstly, to isolate the effects of a particular integrated circuit fabrication process by expressing all delays in terms of a basic “unit  “ particular to that process. –  is the delay of an inverter driving an identical inverter with no parasitics. –Thus we express absolute delay as the product of a unitless delay of the gate d and the delay unit that characterizes a given process: Slide 16 Delay in a Logic Gate

17 CMOS VLSI Design5: Logical EffortSlide 17 Delay in a Logic Gate  Express delays in process-independent unit  3RC  12 ps in 180 nm process 40 ps in 0.6  m process

18 CMOS VLSI Design5: Logical EffortSlide 18 Delay in a Logic Gate  Express delays in process-independent unit  Delay has two components

19 CMOS VLSI Design5: Logical EffortSlide 19 Delay in a Logic Gate  Express delays in process-independent unit  Delay has two components  Effort delay f = gh (proportional to the load on the gate’s output) –Again has two components –The effort delay depends on the load and on properties of the logic gate driving the load.

20 CMOS VLSI Design5: Logical EffortSlide 20 Delay in a Logic Gate  Express delays in process-independent unit  Delay has two components  Effort delay f = gh (related to gate’s load) –Again has two components  g: logical effort (g is determined by gate’s structure) –g captures properties of the logic gate, –g  1 for inverter

21 CMOS VLSI Design5: Logical EffortSlide 21 Delay in a Logic Gate  Express delays in process-independent unit  Delay has two components  Effort delay f = gh (related to gate’s load) –Again has two components  h: electrical effort = C out / C in –Ratio of output to input capacitance –Sometimes called fanout, h characterizes the load fanout, in this context, depends on the load capacitance, not just the number of gates being driven.

22 CMOS VLSI Design5: Logical EffortSlide 22 Delay in a Logic Gate  Express delays in process-independent unit  Delay has two components  Parasitic delay p –Represents delay of gate driving no load –parasitic delays are given as multiples of the parasitic delay of an inverter. –A typical value for pinv is 1.0 delay units. pinv is a strong function of process-dependent diffusion capacitances. d = gh+p

23 CMOS VLSI Design Logical effort  The delay formulation involves four parameters: –The process parameter  represents the speed of the basic transistors. –The parasitic delay p expresses the intrinsic delay of the gate due to its own internal capacitance, which is largely independent of the size of the transistors in the logic gate. –The electrical effort, h, combines the effects of external load, which establishes Cout, with the sizes of the transistors in the logic gate, which establish Cin. –The logical effort g expresses the effects of circuit topology on the delay free of considerations of loading or transistor size.  Thus, we can observe that “logical effort” is useful because it depends only on circuit topology. 5: Logical EffortSlide 23

24 CMOS VLSI Design5: Logical EffortSlide 24 Computing Logical Effort  DEF: “logical effort is how much more input capacitance a gate must present in order to deliver the same output current as an inverter.” (Sutherland)  Measure from delay vs. fanout plots  Or estimate by counting transistor widths an inverter has a logical effort of 1. Gates NAND e NOR with relative transistor widths chosen for roughly equal output currents. g = no.C in /no.C out

25 CMOS VLSI Design5: Logical EffortSlide 25 Example: Inverter  Estimate inverter delay (reference) 2 2 1 1

26 CMOS VLSI Design4: DC and Transient ResponseSlide 26 Example: 2-input NAND  Estimate 2-input NAND delay Parallel capacitances Transistor A: 2C+2C=4C Transistor B: 2C+2C=4C g = 4/3= port input capacitance invert ouput capacitance

27 CMOS VLSI Design5: Logical EffortSlide 27 Delay Plots d = f + p = gh + p

28 CMOS VLSI Design5: Logical EffortSlide 28 Delay Plots d = f + p = gh + p

29 CMOS VLSI Design5: Logical EffortSlide 29 Catalog of Gates Gate typeNumber of inputs 1234n Inverter1 NAND4/35/36/3(n+2)/3 NOR5/37/39/3(2n+1)/3 Tristate / mux22222 XOR, XNOR4, 46, 12, 68, 16, 16, 8  Logical effort of common gates

30 CMOS VLSI Design30 Example – 8-input AND

31 CMOS VLSI Design5: Logical EffortSlide 31 Catalog of Gates Gate typeNumber of inputs 1234n Inverter1 NAND234n NOR234n Tristate / mux24682n XOR, XNOR468  Parasitic delay of common gates –In multiples of p inv (  1)


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