1. Surface Structure Analysis in Ⅰ ) Low Energy Ion Scattering Ⅱ ) Medium Energy Ion Scattering Simultaneous Determination of Atomic Arrangement (not only surface atoms but also shallow subsurface atoms) and Elemental Species of Atoms by Specialized form of Ion Scattering Spectroscopy

2. Ⅰ ) Low Energy Ion Scattering The first idea of Impact Collision Ion Scattering Spectroscopy (ICISS) Experimental scattering angle θ L is taken close to 180° for quantitative structure analysis Fig. 1 M. Aono et al., Jpn. J. Appl. Phys. 20 (1981) L829.

3. Extension of ICISS to more convenient Co-axial ICISS (CAICISS) Experimental scattering angle θ L is taken just at 180° for more convenient quantitative structure analysis Fig. 2

4. CAICISS apparatus commercialized by Shimadzu Corp. CAICISS - I Fig. 4 Fig. 3 CAICISS-I was selected in top-ten Japanese industrial productions in 1991 by the Nikkan-kogyo Newspaper.

5. Power of CAICISS 1) Energy-distribution (spectrum) of scattered ions 2) Angular Dependence of scattered ion intensity 3) Time dependence of spectrum of scattered ions Time-resolved observation of dynamic processes Quantitative atomic arrangement analysis Elemental analysis of all atoms Fig. 5 Fig. 6 Fig. 7

6. a b Method of elemental analysis of surfaces atoms by ion scattering ( in case of CAICISS, θ L =180°) Fig. 8

7. Time of flight (ns) Intensity (counts) F/Ca = 1.0 ±0.2 Composition analysis by CAICISS of a monolayer of CaF 2 deposited on Si(111) Fig. 9

8. L a b Method to determine the shape of shadow cone experimentally by CAICISS a b Method to determine the position of atom B relative to the position of atom A by CAICISS A B Intensity of ions scattered from atom B Fig. 10 Fig. 11

9. Fig. 12 Structure analysis of TiC(111) surface by CAICISS

10. Intensity of ions scattered from Ca atoms Angle d 0.064±0.005 nm (0.079 nm in bulk) F Ca Si (a) (b) Structure analysis of CaF/Si(111) by CAICISS Fig. 13

11. Structure analysis of Si(111)√3x √3-Ag surface by CAICISS Fig. 14

12. Ⅱ ) Medium Energy Ion Scattering Medium-energy CAICISS (ME-CAICISS) DUOPLASMATRON ION SOURCE X-Y STEERER EINZEL LENS ACCELERATION TUBE Q-LENS X-Y STEERER BENDING MAGNET COLLIMATOR CHOPPING ELECTRODE CHOPPING APERTURE POSCHENRIEDER ELECTROSTATIC DEFLECTOR MCP SCATTERED-ION DECELERATION TUBE SAMPLE AMPLIFIERCFD TIME ANALYZER PULSE GENERATOR DELAY (a) Ion beam source in combination with a 100 keV accelerator (b) Beam chopping system (c) Target on a 3-axis goniometer (d) TOF energy analyzer located at a scattering angle of 180 ゜ (a) (b) (c) (d) E 0 = 100 keV Subsurface and burried interface structure analysis by ME-CAICISS Fig. 15 Fig. 16

13. Sb (δ-doping) a-Si Si(001) Si T. Kobayashi et al., Appl. Phys. Lett. 74 (1999) 673 250 200 150 100 50 0 Counts 520480440400 TOF (ns) ●■▲○□ △ (a) (b) Sb Si 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Normalized yield 2520151050 Polar angle (deg) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Sb Si Fig. 17 (a) (b) (c) Concentration of Sb (%) 302520151050 Depth (nm) 5 4 3 2 1 0 1.0 0.8 0.6 0.4 0.2 0.0 Fraction of substitutional Sb Original position of δ-doped Sb layer (d) Annealed at 750 o C Structure analysis by ME-CAICISS of a Si film with δ-doped Sb (after annealing at 750 o C) 25 nm