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Charge transport in organic semiconductors and organic field effect transistors Andrej Golubkov IF – Seminar, Graz, 5.11.2007
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 2 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Co-Workers Egbert Zojer Peter Pacher Harald Etschmaier
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 3 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Outline Part I: Charge transport models –Comparison to inorganic semiconductors –Drude model –Hopping transport models Part II: Building and analyzing FETs –Building process –temperature dependend Measurements Part III: Parameter extraction and first results –Parameter extraction –Mobility vs. temperature
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 4 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Charge carrier transport models. Part I: overview based on reviews from Gilles Horowitz
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 5 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Comparison (Molecular) Crystal Covalent Metallic Gilles Horowitz
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 6 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Conjugated organic materials sp2 hybridization of carbon 3 σ bonds from (2s, 2p x, 2p y ) 1 π bond from 2p z
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 7 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Simple band transport: Drude model free moving carriers, acceleration by external field scattering at phonons, impurieties
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 8 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Temperature dependence of v th Temperature dependence of scattering process: mean free path between phonons, charged impurities Simple band transport: Drude model W. Warta
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 9 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Polaron transport Polarization by one single charge dressed (by π- electros) charge residence time el. polarization time bandwidth bandgap Gilles Horowitz
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 10 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Polaron transport Gilles Horowitz Silinish E.A, Capek V.
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 11 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Polaron transport Silinish E.A, Capek V. Eg Charge modulated spectroscopy Peter J. Brown
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 12 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Hopping (polaron) Transport useful for disordered materials (polymers) Bässler's model –transport by hopping between localized states –(Polarisation) Energy of the states fluctuates –DOS is described by gausian distribution of variance σ –charge transport: random walk energy difference intersite distance
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 13 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Hopping (polaron) Transport Perculation theory by Vissenberg & Matters –Variable range hopping among exponential DOS –Conduction through 'resistor network': infinite cluster with the highest conductivity is relevant –Gate voltage (charge density) dependence
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 14 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Hopping (polaron) Transport Pentacene 300 K180 K117 K A. R. Brown
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 15 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Multiple trapping & thermal release Assumptions –carriers arriving at trap -> capture –release is thermaly activated –2 sorts of carriers Gilles Horowitz
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 16 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Multiple trapping & thermal release Gate Voltage (charge carrier density) dependence –Upon aplied Vg a potential Vs develops at insulator-semiconductor interface –shift of E F towards E C –trapped carrier release becomes easier
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 17 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Multiple trapping & thermal release Gate Voltage (charge carrier density) dependence
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 18 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Multiple trapping & thermal release Alternative approach –effective mobility vs. effective charge density –Hall-effect measurements
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 19 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Multiple trapping & thermal release Hall-effect results on rubrene single crystal Menard et al Podzorov, Menard, Rogers, Gershenson
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 20 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Summary Drude Bässler Vissenberg Matters MTR
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 21 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Device fabrication and measurement setups Part II:
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 22 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at OTFT, Fabrication and measurements
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 23 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 24 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 25 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 26 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 27 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 28 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 29 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Cryostat
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 30 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 31 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Parameter extraction and first results Part III:
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 32 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at OFET some differences to conventional OFETs –can potentially operate in electron and hole accumulation mode
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 33 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at OFET basic OFET operation –related to a capacitor
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 34 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at OFET output curve, logarithmicoutput curve, linear
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 35 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at green: Vd = 10V cyan: Vd = 45V Symobols: different devices 300 K 150 K
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 36 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at Thank You for Your Attention!
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University of Technology Graz - Institute of Solid State Physics Professor Horst Cerjak, 19.12.2005 37 Andrej Golubkov Charge transport in organic semiconductors and oTFTs golubkov@sboxgolubkov@sbox.tugraz.at transition between transport modes Trap dominatedIntrinsic
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