1. Chaos, Communication and Consciousness Module PH19510 Lecture 8 Entering the Transistor Age

2. Overview Metals, Insulators & Semiconductors The junction diode The bipolar transistor Planar Processing

3. Metals, Insulators and Semiconductors Metals  Overlap of valence & conduction bands   empty states for electrons to move into   conduction Insulators  Large gap between valence & conduction bands   No free states   No conduction Semiconductors (Silicon, Germanium, GaAs etc)  Small gap between valence & conduction bands   Some free states   some conduction – depends on impurities, temperature etc.

5. Column IIIB, IVB & VB Column IIIB  B, Al …  3 electrons in outer shell Column IVB  C, Si, Ge …  4 electrons in outer shell  Diamond like crystal Column VB  N, P, As …  5 electrons in outer shell

6. Crystal structure of Silicon Diamond like Tetrahedral bonds Hard Brittle

7. Intrinsic Semiconductor 2D representation of crystal lattice Semiconductor All electrons paired Valence band filled No-conduction

8. n-Type Semiconductor Electron donor impurity Column V (As, P) Low concentration ≈1:10 8 Add ‘free’ electron Electron Movement  conduction As

9. p-Type Semiconductor Electron acceptor impurity Column III (Boron) Low concentration ≈1:10 8 Add ‘hole’ Hole Movement  conduction B

10. pn Junction n-type & p-type  junction Spare electrons from n- type fill holes in p-type  depletion region n-type –ve  depletion region shrinks  forward bias (conduction) n-type +ve  depletion region grows  reverse bias (no conduction) np np -ve+ve np -ve +ve

11. Point contact PNP junction First Transistor 1947 Brattain, Bardeen & Shockley Ge p p n

12. NPN Bipolar Junction Transistor Emitter at ground +ve voltage on collector Collector-Base reverse biased  no current Apply +ve voltage on base Electrons pulled from emitter into base Collector base depletion region shrinks  many electrons flow from Emitter to Collector Amplification n n p Collector Base Emitter

13. Shockley and Silicon Valley 1955  Shockely leaves Bell  Forms Shockley Semiconductor in Palo Alto, CA  12 keen young engineers  ‘Difficult’ management style 1957  Staff leave (The Traitorous 8) & form Fairchild Semiconductor

14. From Germanium to Silicon Germanium rare but easier to refine Silicon Common  25.7% of earth crust Electric Arc refining Silicon forms stable oxide Better electrical and mechanical properties

15. Refining Pure material crystallises first from melt Impurities left behind

16. Printing Transistors on Silicon Planar process developed at Fairchild Possible to dope n-type so it becomes p- type and vice versa Use of Silicon Dioxide (SiO 2 ) as mask for processing

17. Planar Transistors n-Substrate Grow Oxide Pattern & etch oxide Diffuse p-dopant Grow Oxide Pattern & etch oxide Diffuse n-dopant Grow Oxide Pattern & etch oxide Metal Contacts n CollectorBaseEmitter Vertical Transistor

18. Review of Lecture 8 Metals, Insulators & Semiconductors The junction diode The bipolar transistor Planar Processing

19. References Where to go for more Information inventors.about.com/library/weekly/aa061698.htm US Patent 2524035 www.eepatents.com/feature/2524035.html2524035 www.eepatents.com/feature/2524035.html Intel Education programme www.intel.com/education/transworks/ Principles of semiconductor devices ece- www.colorado.edu/~bart/book/book/ece- www.colorado.edu/~bart/book/book/ Webelements.com The Britney Spears guide to Semiconductor Physics britneyspears.ac/physics/basics/basics.htm - britneyspears.ac/physics/basics/basics.htm www.icknowledge.com